Datasheet MSC080SMA330B4 Datasheet
MSC080SMA330B4
3300 V, 80 mΩ SiC N-Channel Power MOSFET
Product Overview
The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon
MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The
MSC080SMA330B4 device is a 3300 V, 80 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense.
Features
The following are key features of the MSC080SMA330B4 device:
• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, T
• Fast and reliable body diode
• Superior avalanche ruggedness
• RoHS compliant
Benefits
The following are benefits of the MSC080SMA330B4 device:
• High efficiency to enable lighter, more compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need for external freewheeling diode
• Lower system cost of ownership
Applications
The MSC080SMA330B4 device is designed for the following applications:
• PV inverter, converter, and industrial motor drives
• Smart grid transmission and distribution
• Induction heating and welding
• H/EV powertrain and EV charger
• Power supply and distribution
J(max)
= 150 °C
© 2022 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS-00004397A-page 1
1. Device Specifications
This section shows the specifications of the MSC080SMA330B4 device.
1.1 Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the MSC080SMA330B4 device.
Table 1-1. Absolute Maximum Ratings
Symbol Parameter Ratings Unit
MSC080SMA330B4
Device Specifications
V
DSS
I
D
Drain source voltage 3300 V
Continuous drain current at TC = 25 °C 41 A
Continuous drain current at TC = 100 °C 26
I
DM
V
GS
P
D
Pulsed drain current
Gate-source voltage 23 to –10 V
Total power dissipation at TC = 25 °C 381 W
1
100
Linear derating factor 3.04 W/°C
Note:
1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature.
The following table shows the thermal and mechanical characteristics of the MSC080SMA330B4 device.
Table 1-2. Thermal and Mechanical Characteristics
Symbol Characteristic/Test Conditions Min Typ Max Unit
R
θJC
T
J
T
STG
T
L
Junction-to-case thermal resistance 0.22 0.33 °C/W
Operating junction temperature –55 150 °C
Storage temperature –55 150 °C
Soldering temperature for 10 seconds (1.6
300 °C
mm from case)
Mounting torque, 6-32 or M3 screw 10 lbf-in
Wt Package weight 0.22 oz
1.2 Electrical Performance
The following table shows the static characteristics of the MSC080SMA330B4 device. TJ = 25 °C unless otherwise
specified.
Table 1-3. Static Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
(BR)DSS
R
DS(on)
© 2022 Microchip Technology Inc.
and its subsidiaries
Drain-source breakdown voltage VGS = 0 V, ID = 100 μA 3300 V
Drain-source on resistance
1.1 N-m
6.2 g
1
VGS = 20 V, ID = 30 A 84 105 mΩ
Datasheet
DS-00004397A-page 2
MSC080SMA330B4
Device Specifications
...........continued
Symbol Characteristic Test Conditions Min Typ Max Unit
V
I
DSS
GS(th)
Gate-source threshold voltage VGS = VDS, ID = 3 mA 1.9 2.97 V
Zero gate voltage drain current VDS = 1200 V, VGS = 0 V 100 µA
VDS = 1200 V, VGS = 0 V, TJ =
500
125 °C
I
GSS
Gate-source leakage current VGS = 20 V/–10 V ±100 nA
Note:
1. Pulse test: pulse width < 380 μs, duty cycle < 2%.
The following table shows the dynamic characteristics of the MSC080SMA330B4 device. TJ = 25 °C unless otherwise
specified.
Table 1-4. Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
iss
C
rss
C
oss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
ESR Gate equivalent series
Input capacitance VGS = 0 V
Reverse transfer
capacitance
Output capacitance 77
VDD = 2400 V
VAC = 25 mV
ƒ = 200 kHz
Total gate charge VGS = –5 V/20 V
Gate-source charge 51
Gate-drain charge 161
VDD = 2650 V
ID = 30 A
Turn-on delay time VDD = 2310 V
Voltage rise time 25
Turn-off delay time 50
Voltage fall time 32
Turn-on switching energy 1590 µJ
Turn-off switching energy 450
VGS = –5 V/20 V
ID = 20 A
R
= 8 Ω
g(ext)
Freewheeling diode =
MSC080SMA330B4 (VGS = –5
V) (reference Fig. 1-20)
Turn-on delay time VDD = 2310 V
Voltage rise time 18
Turn-off delay time 50
Voltage fall time 22
Turn-on switching energy 1300 µJ
Turn-off switching energy 360
VGS = –5 V/20 V
ID = 20 A
R
= 8 Ω
g(ext)
Freewheeling diode =
MSC030SDA330B (reference
Fig. 1-20)
3462 pF
4
55 nC
34 ns
35 ns
f = 1 MHz, 25 mV, drain short 3.7 Ω
resistance
E
AS
Avalanche energy, single
VDS = 150 V, ID = 30 A 100 mJ
pulse
The following table shows the body diode characteristics of the MSC080SMA330B4 device. TJ = 25 °C unless
otherwise specified.
© 2022 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS-00004397A-page 3
MSC080SMA330B4
Device Specifications
Table 1-5. Body Diode Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
t
rr
Q
I
RRM
SD
rr
Diode forward voltage ISD = 30 A, VGS = 0 V 4.0 V
Reverse recovery time ISD = 20 A, VGS = –5 V, Drive
Reverse recovery charge 818 nC
Reverse recovery current 41 A
1.3 Typical Performance Curves
This section shows the typical performance curves of the MSC080SMA330B4 device.
Figure 1-1. Drain Current vs. VDS at T
J
ISD = 30 A, VGS = –5 V 4.2
35 ns
Rg = 8 Ω, VDD = 2310 V, dl/dt =
–3760 A/μs
Figure 1-2. Drain Current vs. VDS at V
GS
Figure 1-3. Drain Current vs. VDS at V
© 2022 Microchip Technology Inc.
and its subsidiaries
GS
Figure 1-4. Drain Current vs. VDS at V
Datasheet
GS
DS-00004397A-page 4
MSC080SMA330B4
Device Specifications
Figure 1-5. R
Figure 1-7. Capacitance vs. Drain-to-Source Voltage Figure 1-8. ID vs. VDS 3rd Quadrant Conduction
vs. Junction Temperature Figure 1-6. Gate Charge Characteristics
DS(on)
© 2022 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS-00004397A-page 5
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