The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon
MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The
MSC080SMA330B4 device is a 3300 V, 80 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense.
Features
The following are key features of the MSC080SMA330B4 device:
• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, T
• Fast and reliable body diode
• Superior avalanche ruggedness
• RoHS compliant
Benefits
The following are benefits of the MSC080SMA330B4 device:
• High efficiency to enable lighter, more compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need for external freewheeling diode
• Lower system cost of ownership
Applications
The MSC080SMA330B4 device is designed for the following applications:
• PV inverter, converter, and industrial motor drives
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