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MSB92ASWT1G,
MSB92AS1WT1G
PNP Silicon General
Purpose High Voltage
Transistor
This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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COLLECTOR
3
MAXIMUM RATINGS (T
Rating
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current − Continuous I
ESD Rating: Human Body Model
Machine Model
= 25°C)
A
Symbol Value Unit
(BR)CBO
(BR)CEO
(BR)EBO
C
ESD Class 1C
−300 Vdc
−300 Vdc
−5.0 Vdc
500 mAdc
−
Class C
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation (Note 1) P
Junction Temperature T
Storage Temperature Range T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
D
J
stg
150 mW
150 °C
−55 to +150 °C
1
BASE
1
2
SC−70 (SOT−323)
CASE 419
STYLE 3
2
EMITTER
3
MARKING DIAGRAM
D3 M G
G
1
MSB92ASWT1G MSB92AS1WT1G
Dx = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
D5 M G
G
1
© Semiconductor Components Industries, LLC, 2010
December, 2010 − Rev. 5
ORDERING INFORMATION
Device Package Shipping
MSB92ASWT1G SC−70
(Pb−Free)
MSB92AS1WT1G SC−70
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 Publication Order Number:
3000/Tape & Reel
3000/Tape & Reel
MSB92ASWT1/D
†
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MSB92ASWT1G, MSB92AS1WT1G
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
Collector-Emitter Breakdown Voltage
(I
= −1.0 mAdc, IB = 0)
C
Collector-Base Breakdown Voltage
= −100 mAdc, IE = 0)
(I
C
Emitter-Base Breakdown Voltage
= −100 mAdc, IE = 0)
(I
E
Collector-Base Cutoff Current
(V
= 300 Vdc, IE = 0)
CB
Emitter−Base Cutoff Current
(V
= −3.0 Vdc, IB = 0)
EB
DC Current Gain (Note 2)
(V
= −10 Vdc, IC = −1.0 mAdc)
CE
(VCE = −10 Vdc, IC = −10 mAdc)
(VCE = −10 Vdc, IC = −30 mAdc)
Collector-Emitter Saturation Voltage (Note 2)
(I
= −20 mAdc, IB = −2.0 mAdc)
C
Base−Emitter Saturation Voltage
(I
= −20 mAdc, IB = −2.0 mAdc)
C
SMALL SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
= −10 mAdc, VCE = −20 Vdc, f = 20 MHz)
C
Collector−Base Capacitance
(V
= −20 Vdc, IE = 0, f = 1.0 MHz)
CB
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(sat)
V
BE(sat)
f
C
−300 − Vdc
−300 − Vdc
−5.0 − Vdc
− −0.25
− −0.1
mA
mA
−
120
40
25
200
−
−
− −0.5 Vdc
− −0.9 Vdc
T
cb
50 − MHz
− 6.0 pF
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2
Page 3
MSB92ASWT1G, MSB92AS1WT1G
TYPICAL CHARACTERISTICS
400
300
200
, DC CURRENT GAIN
100
FE
h
0
150°C
25°C
−55°C
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain Figure 2. V
1.0
IC/IB = 10
0.9
0.8
0.7
0.6
0.5
VOLTAGE (V)
0.4
, BASE−EMITT SATURATION
0.3
BE(sat)
V
0.2
−55°C
IC, COLLECTOR CURRENT (A)
Figure 3. V
Curve Figure 4. V
BE(sat)
VCE = 5 V
25°C
150°C
0.7
IC/IB = 10
0.6
0.5
0.4
0.3
VOLTAGE (V)
0.2
, COLL−EMITT SATURATION
0.1
CE(sat)
V
0.10.010.0010.0001
0.10.010.0010.0001
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
, BASE−EMITTER VOLTAGE (V)
0.3
BE(on)
V
0.2
VCE = 5 V
Curve
CE(sat)
IC, COLLECTOR CURRENT (A)
Curve
BE(on)
150°C
25°C
−55°C
0.10.010.0010.0001
−55°C
25°C
150°C
0.10.010.0010.0001
1000
100
PRODUCT
10
, CURRENT−GAIN BANDWIDTH
T
f
1
Figure 5. Current−Gain Bandwidth Product Figure 6. Drain−to−Source Leakage Current
VCE = 20 V
T
= 25°C
A
1010.1
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
100
2.0
1.6
1.2
0.8
0.4
, COLLECTOR−EMITTER VOLTAGE (V)
0
CE
V
0.1 mA
IC = 10 mA
1.0 mA
1
vs. Voltage
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3
TA = 25°C
IC = 50 mA
100100.10.010.0010.0001
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MSB92ASWT1G, MSB92AS1WT1G
TYPICAL CHARACTERISTICS
100
10
C, CAPACITANCE (pF)
1
1000
TA = 25°C
C
ib
C
ob
1010.1
VR, REVERSE VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V)
100
100
10
, COLLECTOR CURRENT (mA)
C
I
1
1.0 S
10 mS
1010.1
Figure 7. Capacitance Figure 8. Safe Operating Area
100
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MSB92ASWT1G, MSB92AS1WT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
0.05 (0.002)
D
e1
3
H
E
12
e
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIMAMIN NOM MAX MIN
E
b
A
A2
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b 0.30 0.35 0.40 0.012
c 0.10 0.18 0.25 0.004
D 1.80 2.10 2.20 0.071
E 1.15 1.24 1.35 0.045
e 1.20 1.30 1.40 0.047
e1
L
H
E
c
STYLE 3:
PIN 1. BASE
L
MILLIMETERS
0.80 0.90 1.00 0.032
0.65 BSC
0.38
0.20 0.56
2.00 2.10 2.40 0.079 0.083 0.095
2. EMITTER
3. COLLECTOR
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.028 REF
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
0.026 BSC
0.015
0.008 0.022
SOLDERING FOOTPRINT*
0.65
0.65
0.025
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
ǒ
inches
mm
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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MSB92ASWT1/D
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