Page 1
MSB709−RT1
)
Preferred Device
PNP General Purpose
Amplifier Transistor
Surface Mount
Features
• Pb−Free Package is Available
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Collector − Base Voltage V
Collector − Emitter Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I
Collector Current − Peak I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation P
Junction Temperature T
Storage Temperature T
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
= 25°C)
A
(BR)CBO
(BR)CEO
(BR)EBO
C
C(P)
D
J
stg
−60 Vdc
−45 Vdc
−7.0 Vdc
−100 mAdc
−200 mAdc
200 mW
150 °C
−55 ~ +150 °C
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COLLECTOR
3
2
BASE
3
2
1
AR = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location
SC−59
CASE 318D
1
EMITTER
MARKING
DIAGRAM
AR M G
G
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 6
See detailed ordering and shipping information in the package
ORDERING INFORMATION
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MSB709−RT1/D
Page 2
MSB709−RT1
ELECTRICAL CHARACTERISTICS (T
= 25°C)
A
Characteristic Symbol Min Max Unit
Collector − Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
Collector − Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter − Base Breakdown Voltage
(IE = 10 mAdc, IE = 0)
Collector − Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
Collector − Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
DC Current Gain (Note 1)
(VCE = 10 Vdc, IC = 2.0 mAdc)
Collector − Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
h
FE1
V
CE(sat)
−45 − Vdc
−60 − Vdc
−7.0 − Vdc
− −0.1
mAdc
− −100 nAdc
210 340 −
− −0.5 Vdc
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
ORDERING INFORMATION
Device Package Shipping
MSB−709RT1 SC−59 3000 Units / Reel
MSB−709RT1G SC−59
3000 Units / Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
http://onsemi.com
2
Page 3
MSB709−RT1
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE G
D
H
E
3
2
E
1
b
e
C
A1
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.001
b 0.35 0.43 0.50 0.014
c 0.09 0.14 0.18 0.003
D 2.70 2.90 3.10 0.106
E 1.30 1.50 1.70 0.051
e 1.70 1.90 2.10 0.067
L 0.20 0.40 0.60 0.008
H
E
MILLIMETERS
1.00 1.15 1.30 0.039
2.50 2.80 3.00 0.099
INCHES
NOM MAX
0.045 0.051
0.002 0.004
0.017 0.020
0.005 0.007
0.114 0.122
0.059 0.067
0.075 0.083
0.016 0.024
0.110 0.118
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
ǒ
inches
mm
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
3
Page 4
MSB709−RT1
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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For additional information, please contact your
local Sales Representative.
MSB709−RT1/D
4
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