Datasheet MRFIC0912 Datasheet (Motorola)

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
SEMICONDUCTOR TECHNICAL DATA
The MRFIC Line
 !     
Designed primarily for use in high efficiency Analog Cellular applications, the MRFIC0912 is a two–stage power amplifier in Motorola’s proprietary Power Flat Pack 16–lead package. This integrated circuit requires minimal off-chip matching while allowing for the maximum in flexibility in optimizing gain and efficiency. The design employs Motorola’s planar, self–aligned GaAs MESFET IC process to give the highest efficiency possible.
Usable Frequency Range = 800–1000 MHz, Specified for 824–905 MHz
30.8 dBm Minimum Output Power
470 mA Maximum Supply Current at 30.8 dBm Output
23.8 dB Minimum Gain
Simple Off–chip Matching for Maximum Power/Efficiency Flexibility
4.6 Volt Supply
45 dB/Volt Typical Power Output Control
Order MRFIC0912R2 for Tape and Reel Option.
R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
Device Marking = M0912
Order this document
by MRFIC0912/D

900 MHz
GaAs INTEGRATED
POWER AMPLIFIER
CASE 978–02
(PFP–16)
GND
V
N/C
V
D1
N/C
V
G1
RF IN
N/C
G2
1
2
3
4
5
6
7
8
Pin Connections and Functional Block Diagram
16
15
14
13
12
11
10
9
N/C
N/C
N/C
RF OUT/V
RF OUT/V
RF OUT/V
N/C
GND
D2
D2
D2
REV 1
Motorola, Inc. 1997
MOTOROLA RF DEVICE DATA
MRFIC0912
1
Page 2
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Ratings Symbol Limit Unit
Supply Voltage VD1, V RF Input Power P Gate Voltage VG1, VG2, V Storage Temperature Range T Operating Case Temperature T
Thermal Resistance, Junction to Case R
RF
stg
C
θJC
RECOMMENDED OPERATING RANGES
Parameter
RF Frequency f Supply Voltage VD1, V Gate Voltage VG1, V
Symbol Value Unit
RF
D2
D2 G2
GG
8 Vdc 20 dBm –5 Vdc
– 65 to +150 °C – 35 to +100 °C
18 °C/W
824–905 MHz
4.0–6.0 Vdc
–2.3 to –1.5 Vdc
ELECTRICAL CHARACTERISTICS (V
Circuit Shown in Figure 1)
Characteristic
RF Output Power 30.8 31.2 dBm Power Slump (VD1, VD2 = 4.0 V, TC = 100_C) Load Mismatch Survival (VD1, VD2 = 7 V, Load VSWR = 10:1, all phases,
10 sec)
Spurious Output (VD1,VD2 = 0 to 7 V, Pin = 5 to 9 dBm, Load
VSWR = 10:1) Input Return Loss 10 dB Harmonic Output (P
2f
0
3f
0
4f
0
Noise Power (VDD = 0 to 7 V, 45 MHz Above fRF at 30 kHz BW) –93 dBm Maximum Power Control Voltage Slope (Change in P
VD1) Total Supply Current (VD1 set for P VGG Required for I Gate Current during RF Operation –2 2 mA
= 30.8 dBm)
out
out
= 200 mA –2.3 –2.0 –1.7 Vdc
D2Q
, VD2 = 4.6 V , TA = 25°C, fRF = 840 MHz, Pin = 7 dBm, VGG set for I
D1
Min Typ Max Unit
28.5 dBm No Degradation
–60 dBc
— — —
for Change on
out
= 30.8 dBm) 430 470 mA
45 dB/V
— — —
= 200 mA, T ested in
D2Q
–25 –40 –40
dBc
DESIGN AND APPLICATIONS INFORMATION
The MRFIC0912 has been designed for high efficiency 900 MHz applications such as analog cellular and Industrial, Medical and Scientific (ISM) equipment. The two stage MES­FET design utilizes Motorola’s planar refractory gate process to allow high performance GaAs to be applied to consumer applications. The proprietary PFP–16 package assures good grounding and low thermal resistance.
As shown in Figure 1, the gate voltage pins can be ganged together and one voltage applied to both gates to set the quiescent operating current. Alternatively , VG1 and VG2 can be set separately. VD1 can be used as power control with a 45 dB per volt sensitivity. The placement of C3 in the V
D1
supply line can be varied to optimize RF performance since T2 is part of a shunt L matching section. On the output, pins
MRFIC0912
2
11, 12 and 13, the placement of C11 is adjusted for best RF performance.
Layout is important for amplifier stability and RF perfor­mance. Ground vias must be located as close to circuit ground connections as possible. Power supply bypassing C3, C6, C9, and C10 must be included to reduce out–of– band gain and prevent spurious output.
Evaluation Boards
Evaluation boards are available for RF Monolithic Inte­grated Circuits by adding a “TF” suffix to the device type. For a complete list of currently available boards and ones in development for newly introduced product, please con ­tact your local Motorola Distributor or Sales Office.
MOTOROLA RF DEVICE DATA
Page 3
C5
1
2
V
G2
3
4
V
GG
C3
T2
C6
V
D1
16
15
14
13
L2
C9
C10
V
D2
35
30
25
RF IN
VDD = 4.6 V
R1
C4
L1
C2
C1
R1 1 k C1 3.3 pF C2, C3, C8, C9 100 pF C11 8.2 pF
Figure 1. Applications Circuit Configuration
5
6
V
G1
7
8
C6 0.01 µF C10 1 µF C4, C5 1000 pF L1 10 nH
TYPICAL CHARACTERISTICS
VDD = 5.8 V
VDD = 4.0 V
35
30
25
12
T1
11
10
9
L2 22 nH T1 50 Ω, 13° @ 840 MHz T2 50 Ω, 8° @ 840 MHz BOARD MATERIAL — GLASS/EPOXY, εr =
4.45, THICKNESS = 18 MIL
85°C
C11
RF OUT
C8
T = 25°C
, OUTPUT POWER (dBm)
20
out
P
15
Pin, INPUT POWER (dBm)
Figure 2. Output Power versus Input Power
MOTOROLA RF DEVICE DATA
, OUTPUT POWER (dBm)
20
out f = 837 MHz TEMP = 25
0–5
°
C
5
10
P
15
–10 10–10 05
–35°C
VDD = 4.6 V f = 837 MHz
–5
Pin, INPUT POWER (dBm)
Figure 3. Output Power versus Input Power
MRFIC0912
3
Page 4
TYPICAL CHARACTERISTICS
35
VDD = 5.8 V
25
15
, OUTPUT POWER (dBm)
5
out
P
–5
0
13
V
VDD = 4.0 V
f = 837 MHz Pin = 7.0 dBm TEMP = 25
246
, CONTROL VOLTAGE (VOLTS)
cntrl
Figure 4. Output Power versus Control Voltage
70 60
50
40
VDD = 4.0 V
VDD = 4.6 V
°
C
5
35
85°C
25
15
, OUTPUT POWER (dBm)
5
out
P
–5
120
V
cntrl
T = 25°C
–35°C
VDD = 4.6 V f = 837 MHz Pin = 7.0 dBm
345
, CONTROL VOLTAGE (VOLTS)
Figure 5. Output Power versus Control Voltage
70 60
50
40
T = 25°C
85°C
PAE, POWER ADDED EFFICIENCY (%)
PAE, POWER ADDED EFFICIENCY (%)
30
20
10
0
–10
–5 10
VDD = 4.6 V
VDD = 5.8 V
0
Pin, INPUT POWER (dBm)
Figure 6. Power Added Efficiency versus
Input Power
70
60
VDD = 4.0 V
50
40
30
20
10
0
V
, CONTROL VOLTAGE (VOLTS)
cntrl
VDD = 4.6 V
VDD = 5.8 V
4321
Figure 8. Power Added Efficiency versus
Control Voltage
f = 837 MHz TEMP = 25
5
f = 837 MHz Pin = 7.0 dBm TEMP = 25
°
°
C
5
30
20
10
C
PAE, POWER ADDED EFFICIENCY (%)
0
–5
Pin, INPUT POWER (dBm)
0
–35°C
VDD = 4.6 V f = 837 MHz
5
10–10
Figure 7. Power Added Efficiency versus
Input Power
70
60
50
40
30
20
10
PAE, POWER ADDED EFFICIENCY (%)
6
0
050
1
V
cntrl
T = 25°C
–35°C
VDD = 4.6 V f = 837 MHz Pin = 7.0 dBm
23
, CONTROL VOLTAGE (VOLTS)
85°C
4
Figure 9. Power Added Efficiency versus
Control Voltage
MRFIC0912
4
MOTOROLA RF DEVICE DATA
Page 5
TYPICAL CHARACTERISTICS
34
VDD = 5.8 V
33
32
VDD = 4.6 V
31
, OUTPUT POWER (dBm)
VDD = 4.0 V
out
P
30
29
825
835830 840
f, FREQUENCY (MHz)
Figure 10. Output Power versus Frequency
62
VDD = 4.6 V
61
Pin = 7.0 dBm TEMP = 25
845
°
C
850
31.8
31.6
31.4
31.2
31
, OUTPUT POWER (dBm)
30.8
out
P
30.6
30.4
VDD = 4.6 V Pin = 7.0 dBm
Figure 11. Output Power versus Frequency
63
61
–35°C
T = 25°C
85°C
830 835825
f, FREQUENCY (MHz)
T = 25°C
840 845 850
–35°C
60
PAE, POWER ADDED EFFICIENCY (%)
59
VDD = 4.0 V VDD = 5.8 V
825
830 850
f, FREQUENCY (MHz)
Figure 12. Power Added Efficiency
versus Frequency
840
, DRAIN CURRENT (mA)
D2
I
D1
I ,
59
57
Pin = 7.0 dBm TEMP = 25
450 400
350 300 250 200 150 100
50
0
0
°
C
845835
V
, CONTROL VOLTAGE (VOLTS)
cntrl
I
I
D1
PAE, POWER ADDED EFFICIENCY (%)
55
D2
Figure 14. Drain Current versus Control
V oltage
85°C
VDD = 4.6 V Pin = 7.0 dBm
830
835 845
f, FREQUENCY (MHz)
840
Figure 13. Power Added Efficiency
versus Frequency
VDD = 4.6 V f = 837 MHz Pin = 7.0 dBm
321
4
5
850825
MOTOROLA RF DEVICE DATA
MRFIC0912
5
Page 6
P ACKAGE DIMENSIONS
X 45
h
_
A
E2
e
14 x
A
e/2
A2
1
8
E1
8X E
M
bbb C
DETAIL Y
ccc C
16
D
9
B
S
B
DATUM
H
PLANE
BOTTOM VIEW
b1
c
c1
b
S
A
C
SEATING PLANE
M
aaa C
SECT W–W
L1
q
W W
L
1.000
0.039
DETAIL Y
GAUGE
PLANE
A1
CASE 978–02
ISSUE A
D1
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994.
3. DATUM PLANE –H– IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE –H–.
5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. DATUMS –A– AND –B– TO BE DETERMINED AT DATUM PLANE –H–.
MILLIMETERS
DIM MIN MAX
A 2.000 2.350 A1 0.025 0.152 A2 1.950 2.100
D 6.950 7.100 D1 4.372 5.180
E 8.850 9.150 E1 6.950 7.100 E2 4.372 5.180
L 0.466 0.720 L1 0.250 BSC
b 0.300 0.432 b1 0.300 0.375
c 0.180 0.279 c1 0.180 0.230
e 0.800 BSC
h ––– 0.600
q
0 7
__
aaa 0.200
bbb 0.200
ccc 0.100
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MRFIC0912
MOTOROLA RF DEVICE DATA
MRFIC0912/D
6
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