Datasheet MRF914 Datasheet (Microsemi Corporation)

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]

RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS

Features

• Silicon NPN, high Frequency, To-72 packaged, Transistor

• High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz

• Low Noise Figure

NF = 2.5 dB (typ) @ f = 500 MHz

• High FT - 4.5 GHz (typ) @ IC = 20 mAdc

MRF914

2

1. Emitter

1

2. Base

3

3. Collector

4

4. Case

TO-72

DESCRIPTION:

Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching
applications.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol Parameter Value Unit

V

CEO

V

CBO

V

EBO

I

C

Collector-Emitter Voltage 12 Vdc

Collector-Base Voltage 20 Vdc

Emitter-Base Voltage 3.0 Vdc

Collector Current 40 mA

Thermal Data

P

D

Total Device Dissipation @ TA = 25ºC
Derate above 25ºC

200

1.6

mWatts
mW/ ºC

MSC1325.PDF 10-25-99

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)

STATIC
(off)

Symbol Test Conditions Value

BVCEO Collector-Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0) 12 - - Vdc

BVCBO Collector-Base Breakdown Voltage

(IC= 0.1 mAdc, IE=0) 20 - - Vdc

BVEBO Emitter-Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0) 3.0 - -

ICBO Collector Cutoff Current

(VCE = 15 Vdc, IE = 0 Vdc) - - 50 nA

(on)

HFE DC Current Gain

(IC = 20 mAdc, VCE = 10 Vdc) 30 - 200

MRF914

Min. Typ. Max. Unit

Vdc

-

DYNAMIC

Symbol Test Conditions Value

Min. Typ. Max. Unit

f

T

CCB

Current-Gain - Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = .5 GHz) - 4.5 - GHz

Junction Capacitance
(VCB = 10Vdc, IE=0, f=1 MHz) - 0.7 - pF

Functional

Symbol Test Conditions Value

Min. Typ. Max. Unit

Maximum Available Gain

MAG

S

|21|

NF

G

max

MSC1325.PDF 10-25-99

(IC = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) - 12 - dB
Insertion Gain

(IC = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) 10 11 - dB

2

Noise Figure
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 500 MHz) - 2.5 - dB

Maximum Available Power Gain
(IC = 20 mAdc, VCE = 10 Vdc, f = 500 MHz)

-

15 - dB

MRF914

Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 20 mA

(MHz) |S11|

100 .45 -36 15.6 115 .03 75 .67 -20
200 .32 -38 8.7 101 .05 78 .55 -19
300 .26 -36 6.3 91 .08 76 .54 -17
400 .24 -36 4.6 86 .1 74 .52 -22
500 .22 -39 3.8 84 .12 75 .48 -23
600 .21 -40 3.4 78 .15 71 .48 -26
700 .19 -44 3.0 72 .17 68 .47 -29
800 .18 -48 2.5 68 .19 65 .46 -35
900 .18 -58 2.4 69 .20 67 .44 -40

1000 .18 -65 2.4 62 .23 63 .45 -42

∠ φ

|S21|

∠ φ

|S12|

∠ φ

|S22|

∠ φ

MSC1325.PDF 10-25-99

MRF914

MSC1325.PDF 10-25-99