Page 1
C
O
O
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Document Number: MRF9135L
Rev. 8, 5/2006
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large -signal, common - source amplifier
applications in 26 volt base station equipment.
• Typical N- CDMA Performance @ 880 MHz, 26 Volts, I
IS- 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 25 Watts Avg.
Power Gain — 17.8 dB
Efficiency — 25%
Adjacent Channel Power —
750 kHz: - 47 dBc @ 30 kHz BW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW
Output Power
N
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large- Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
RMATI
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
= 1100 mA
DQ
MRF9135LR3
MRF9135LSR3
880 MHz, 135 W, 26 V
LATERAL N- CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF9135LR3
CASE 465A- 06, STYLE 1
NI-780S
MRF9135LSR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
Gate-Source Voltage V
HIVE INF
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Case Operating Temperature T
Operating Junction Temperature T
AR
Table 2. Thermal Characteristics
Characteristic Symbol Value
Thermal Resistance, Junction to Case R
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M2 (Minimum)
Charge Device Model C7 (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
DSS
GS
P
stg
θ
D
C
J
JC
- 0.5, +65 Vdc
- 0.5, +15 Vdc
- 65 to +200 °C
298
1.7
150 °C
200 °C
(1)
0.6 °C/W
W
W/°C
Unit
ARCHIVE INFORMATION
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9135LR3 MRF9135LSR3
1
Page 2
C
O
O
Table 4. Electrical Characteristics
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
= 65 Vdc, VGS = 0 Vdc)
DS
Zero Gate Voltage Drain Leakage Current
= 26 Vdc, VGS = 0 Vdc)
(V
DS
Gate-Source Leakage Current
(V
= 5 Vdc, VDS = 0 Vdc)
GS
On Characteristics
Gate Threshold Voltage
(V
= 10 Vdc, ID = 450 µA)
DS
Gate Quiescent Voltage
(V
= 26 Vdc, ID = 1100 mAdc)
DS
Drain-Source On - Voltage
N
(V
= 10 Vdc, ID = 3 Adc)
GS
Forward Transconductance
(V
= 10 Vdc, ID = 9 Adc)
DS
Dynamic Characteristics
Output Capacitance
(V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
DS
Reverse Transfer Capacitance
(V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
RMATI
HIVE INF
AR
DS
Functional Tests (In Freescale Test Fixture, 50 ohm system) Single - Carrier N- CDMA, 1.2288 MHz Channel Bandwidth Carrier,
PAR = 9.8 dB @ 0.01% Probability on CCDF
Common-Source Amplifier Power Gain
(V
= 26 Vdc, P
DD
f = 880.0 MHz)
Drain Efficiency
(V
= 26 Vdc, P
DD
f = 880.0 MHz)
Adjacent Channel Power Ratio
(V
= 26 Vdc, P
DD
f = 880.0 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz
Channel Spacing)
Input Return Loss
(V
= 26 Vdc, P
DD
f = 880.0 MHz)
Common-Source Amplifier Power Gain
(V
= 26 Vdc, P
DD
f = 865 MHz and 895 MHz)
Drain Efficiency
(V
= 26 Vdc, P
DD
f = 865 MHz and 895 MHz)
Adjacent Channel Power Ratio
(V
= 26 Vdc, P
DD
f = 865 MHz and 895 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750
kHz Channel Spacing)
Input Return Loss
(V
= 26 Vdc, P
DD
f = 865 MHz and 895 MHz)
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
(TC = 25°C, 50 ohm system unless otherwise noted)
Symbol Min Typ Max Unit
I
DSS
I
DSS
I
GSS
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
C
oss
C
rss
G
ps
η 22 25 — %
ACPR — -47 -45 dBc
IRL — - 13.5 -9 dB
G
ps
η — 24 — %
ACPR — -46 — dBc
IRL — - 12.5 — dB
— — 10 µAdc
— — 1 µAdc
— — 1 µAdc
2 2.8 4 Vdc
3.25 3.7 5 Vdc
— 0.19 0.4 Vdc
— 12 — S
— 109 — pF
— 4.4 — pF
16 17.8 — dB
— 17 — dB
ARCHIVE INFORMATION
MRF9135LR3 MRF9135LSR3
2
RF Device Data
Freescale Semiconductor
Page 3
C
O
O
V
GG
+
C9 C8 C7
B2
B1
V
+++
L1
C18 C20 C21
C19
C22L2
+
C23
DD
C11
DUT
C10
Z12
Z11Z10
C13
C12
Z11 0.105″ x 0.630″ Microstrip
Z12 0.145″ x 0.630″ Microstrip
Z13 0.200″ x 0.630″ x 0.220″ Taper
Z14 0.180″ x 0.220″ Microstrip
Z15 0.110″ x 0.220″ Microstrip
Z16 0.200″ x 0.220″ Microstrip
Z17 0.900″ x 0.080″ Microstrip
Z18 0.360″ x 0.080″ Microstrip
Z19 0.410″ x 0.080″ Microstrip
PCB Arlon GX- 0300 - 55 - 22, 0.030″
Z15
C14
Z16Z13 Z14 Z17 Z18 Z19
C17
C16C15
, εr = 2.55
INPUT
N
RF
Z1
Z2
C1
Z4
Z3 Z8 Z9
C2
Z1 0.430″ x 0.080″ Microstrip
Z2 0.430″ x 0.080″ Microstrip
Z3 0.800″ x 0.080″ Microstrip
Z4 0.200″ x 0.220″ Microstrip
Z5 0.110″ x 0.220″ Microstrip
Z6 0.175″ x 0.220″ Microstrip
Z7 0.200″ x 0.220″ x 0.630″ Taper
Z8 0.250″ x 0.630″ Microstrip
Z9 0.050″ x 0.630″ Microstrip
Z10 0.050″ x 0.630″ Microstrip
Z5 Z6 Z7
C3
C4
C5
C6
Figure 1. 880 MHz Test Circuit Schematic
RMATI
Table 5. 880 MHz Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1, B2 Ferrite Beads, Short 2743019447 Fair Rite
C1, C7, C17, C18 47 pF Chip Capacitors 100B470JP 500X ATC
C2, C16 0.6-4.5 Variable Capacitors, Gigatrim 27271SL Johanson
C3 8.2 pF Chip Capacitor 100B8R2BP 500X AT C
C4, C15 0.8-8.0 Variable Capacitors, Gigatrim 27291SL Johanson
C5, C6 12 pF Chip Capacitors 100B120JP 500X ATC
C8 20K pF Chip Capacitor 200B203MP50X ATC
C9, C20, C21, C22 10 µF, 35 V Tantalum Capacitors T491D106K035AS Kemet
HIVE INF
C10, C11, C12, C13 7.5 pF Chip Capacitors 100B7R5JP 500X AT C
C14 11 pF Chip Capacitor 100B110JP 500X AT C
C19 0.56 µF, 50 V Chip Capacitor C1825C564K5RA7800 Kemet
C23 470 µF, 63 V Electrolytic Capacitor SME63VB471M12X25LL United Chemi- Con
L1, L2 12.5 nH Coilcraft inductors A04T-5 Coilcraft
AR
WB1, WB2 10 mil Brass Shim (0.205 x 0.530) RF- Design Lab RF- Design Lab
RF
OUTPUT
ARCHIVE INFORMATION
RF Device Data
Freescale Semiconductor
MRF9135LR3 MRF9135LSR3
3
Page 4
C
O
O
C9 B1
B2
C23
C8
C20 C21 C22
C19
N
RMATI
C7
L1
C1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
C2
C3
C4
Figure 2. 880 MHz Test Circuit Component Layout
C5
WB1 WB2
C6
C10
C12
CUT OUT AREA
C11
C13
C14
C18
L2
C15
C16
MRF9135L
900 MHz
Rev−02
C17
HIVE INF
AR
MRF9135LR3 MRF9135LSR3
4
ARCHIVE INFORMATION
RF Device Data
Freescale Semiconductor
Page 5
C
O
O
TYPICAL CHARACTERISTICS
N
RMATI
19
18.5
18
17.5
IDQ = 1650 mA
1320 mA
19
18 30
17 25
16 20
15 −20
14 −30
, POWER GAIN (dB)
ps
13 −40
G
12 −50
11
860
G
ps
η
D
IRL
ACPR
VDD = 26 Vdc
P
= 25 W (Avg.)
out
= 1100 mA
I
DQ
N−CDMA IS−95 Pilot, Sync, Paging
Traffic Codes 8 through 13
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit
Performance
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
VDD = 26 Vdc
−20
f1 = 880 MHz, f2 = 880.1 MHz
−30
35
, DRAIN
D
η
EFFICIENCY (%)
−10
−12
−14
ACPR (dBc)
−16
−60
900865 870 875 880 885 890 895
INPUT RETURN LOSS (dB)IRL,
−18
1100 mA
17
, POWER GAIN (dB)
ps
16.5
15.5
880 mA
16
1
P
, OUTPUT POWER (WATTS) PEP
out
G
Figure 4. Power Gain versus Output Power
HIVE INF
−10
VDD = 26 Vdc
−20
I
= 1100 mA
DQ
AR
INTERMODULATION DISTORTION (dBc)IMD,
f1 = 880 MHz, f2 = 880.1 MHz
−30
−40
3rd Order
−50
−60
−70
−80
1
5th Order
7th Order
, OUTPUT POWER (WATTS) PEP
P
out
Figure 6. Intermodulation Distortion Products
versus Output Power
IDQ = 880 mA
−40
1650 mA
−50
INTERMODULATION DISTORTION (dBc)IMD,
−60
10
100
1
P
, OUTPUT POWER (WATTS) PEP
out
1320 mA
1100 mA
10
100
Figure 5. Intermodulation Distortion versus
Output Power
22
20 50
18 40
G
ps
16 30
14 20
, POWER GAIN (dB)
ps
G
12 10
η
D
10
10
100
1
, OUTPUT POWER (WATTS) AVG.
P
out
10
VDD = 26 Vdc
I
= 1100 mA
DQ
f1 = 880 MHz
100
60
ARCHIVE INFORMATION
, DRAIN EFFICIENCY (%)
D
η
0
Figure 7. Power Gain and Efficiency versus
Output Power
RF Device Data
Freescale Semiconductor
MRF9135LR3 MRF9135LSR3
5
Page 6
C
O
O
TYPICAL CHARACTERISTICS
N
RMATI
HIVE INF
20
18 40
16 20
14 0
12 −20
, POWER GAIN (dB)
ps
G
10 −40
8
1
20
18 40
16 20
14 0
12 −20
, POWER GAIN (dB)
ps
10 −40
G
8 −60
6
11
10
)
2
G
ps
η
D
VDD = 26 Vdc
I
= 1100 mA
DQ
f1 = 880 MHz, f2 = 880.1 MHz
IMD
10
, OUTPUT POWER (WATTS) PEP
P
out
Figure 8. Power Gain, Efficiency and IMD
versus Output Power
G
ps
η
D
VDD = 26 Vdc, IDQ = 1100 mA
f = 880 MHz
N−CDMA IS−95 Pilot, Sync, Paging,
ACPR
750 kHz
ALT
1.98 MHz
1
Figure 9. N- CDMA Performance Output Power
Traffic Codes 8 through 13
10
P
, OUTPUT POWER (WATTS) AVG.
out
versus Gain, ACPR, Efficiency
100
60
, DRAIN EFFICIENCY (%)
D
η
−60
60
−80
IMD, INTERMODULATION DISTORTION (dBc)
, DRAIN EFFICIENCY (%)
D
η
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
AR
MRF9135LR3 MRF9135LSR3
6
10
10
9
10
MTTF FACTOR (HOURS x AMPS
8
10
90
100 110 130 150 170 200
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
Figure 10. MTTF Factor versus Junction Temperature
120 140 160 180 190
T
, JUNCTION TEMPERATURE (°C)
J
2
for MTTF in a particular application.
D
2
ARCHIVE INFORMATION
210
RF Device Data
Freescale Semiconductor
Page 7
C
O
O
N- CDMA TEST SIGNAL
100
0.01
PROBABILITY (%)
0.001
0.0001
N
RMATI
10
1
0.1
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0
2468
PEAK−TO−AVERAGE (dB)
Figure 11. Single- Carrier CCDF N -CDMA
−10
−20
−30
−40
−50
−60
(dB)
−70
−80
−90
10
−100
−110
−ALT1 in 30 kHz
Integrated BW
.
.
.
.
.
.
.
..
.
.
.
...
.
.
.
.
.
.
.
..
.
.
..
.
.
.....
.
.
.
.
.
.
.. .
.
.
.
.
.
....
.
.
.
.
.
.
.
.
.
.
.
..
...
.
.
.
.
.
..
.
...
.
...
...
.
.
.
.
.
.
.
.
.
... . . .
.
.
...
..
.
.
.
.
.
.
.
.
..
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
....
.
.
.
..
..
.
..
.
...
.
.
..
.
.
.
.
..
.
.
.
.
.
.
.
.
.
.
.....
.
...
.
.
.
...
.
.
...
.
.
.
..
.
..
.
.
.
.
....
....
..
.
...
...
...
..
..
.
.....
.....
...
.
...
....
.
.
....
.
.
.
..
.
...
.
.
.
.
.
.
.
...
.
..
....
.
.
.
.
.
.
..
.
.
.
.
.
.
..
.
..
.
...
.
.
.
....
.
..
.
.
.
.
.
.
.
−ACPR in 30 kHz
Integrated BW
1.2288 MHz
Channel BW
.
.
.
.
.
.
.
.
.
.
.
.
.
..
.
.
...
.
.
.
.
.
.
.
.
.
..
.
.
..
.
..
...
...
.
...
...
..
.
.
..
..
.....
..
.
.
.
.
.
..
.
.
.
..
.
.
.
....
.
.
.
.
..
...
..
.
.
.
...
.
.
.
.
.
.
.
.
..
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
..
.
.
.
.
.
.
..
.
.
...
...
....
.
.
.
.
.
...
.
.....
..
...
....
.
.
.
.
.
..
.
.
.
....
..
.
.
.
.
.
.
.
..
...
.
.
.
.
.
..
.
.
.
.
.
.
.
.
...
.
.
.
.
.
.
.
....
.
.
.
.
..
..
.
.
.
.
..
.
..
.
.
.
.
.
.
.
.
....
.
...
.. .
...
.
.
.
.
.
f, FREQUENCY (MHz)
.
.
.
.
.
.
.
.
..
.
..
..
.
.
.
.
.
.
...
.
.
.
.....
.
.
.
.
.
..
.
.
.
.
.
.
.
.
.
.
.
...
.
..
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
...
.
.
.
.
.
.
.
..
..
.
.
.
..
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
...
..
.
.
.
.
.
.
.
..
.
.
.
.
.
.
.
.
.
.
.
.
.
.
..
.
.
.
.
.
.
.
.
.
.
.
.
.
.
..
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
..
.
.
.
.
.
.
.
...
.
.
...
.
...
.
.
.
...
+ACPR in 30 kHz
Integrated BW
+ALT1 in 30 kHz
Integrated BW
.
..
..
.
.
.
.
.
....
.
..
.
.
...
.
...
.
.
.
.
.
...
.
.
.
.
.
..
.
.
.
.....
...
.
.
....
....
...
.
..
.....
..
.
.
.
.
.
.
..
.
.
.
.
.
.
.
.
..
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
...
.
.
.
...
.
.
.
.....
.....
.
...
.
.
.
.
.
......
...
..
.
.
...
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
..
.
..
.
..
.
..
.
.
.
...
.
...
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
...
.
.
.
.
.
.
.
.
...
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
..
...
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
...
.
..
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
..
...
.
.
.
..
.
.
.
.
...
.
.
.
.
.
.
.
.
.
.
.
.
2.90.7 2.21.50−0.7−1.5−2.2−2.9−3.6 3.6
.
.
.
.
.
.
.
.
..
...
.
..
.
.
.
.
..
.
Figure 12. Single- Carrier N - CDMA Spectrum
HIVE INF
AR
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
MRF9135LR3 MRF9135LSR3
7
Page 8
C
O
O
N
RMATI
Zo = 2 Ω
V
= 26 V, IDQ =1100 mA, P
DD
f
MHz
Z
source
f = 895 MHz
Z
source
f = 865 MHz
f = 895 MHz
Z
Z
load
load
Ω
f = 865 MHz
= 25 W Avg.
out
Ω
HIVE INF
AR
865
880
895
Z
= Test circuit impedance as measured from
source
Z
= Test circuit impedance as measured
load
Input
Matching
Network
Figure 13. Series Equivalent Source and Load Impedance
1.15 + j0.3
1.25 + j0.5
1.35 + j0.75
gate to ground.
from drain to ground.
Device
Under
Test
Z
source
1.17 - j0.24
1.22 - j0.1
1.32 - j0.07
Z
load
Output
Matching
Network
ARCHIVE INFORMATION
MRF9135LR3 MRF9135LSR3
8
RF Device Data
Freescale Semiconductor
Page 9
C
O
O
N
NOTES
RMATI
HIVE INF
AR
ARCHIVE INFORMATION
RF Device Data
Freescale Semiconductor
MRF9135LR3 MRF9135LSR3
9
Page 10
C
O
O
N
NOTES
RMATI
HIVE INF
AR
ARCHIVE INFORMATION
MRF9135LR3 MRF9135LSR3
10
RF Device Data
Freescale Semiconductor
Page 11
C
O
O
PACKAGE DIMENSIONS
N
RMATI
B
B
(FLANGE)
G
1
2
D
M
bbb B
M
A
T
M
M
N
H
E
AA
(FLANGE)
Q2X
bbb B
3
K
(INSULATOR)
M
bbb B
(LID)
ccc B
A
T
M
A
T
C
SEATING
T
PLANE
M
M
M
M
A
T
M
M
CASE 465- 06
ISSUE G
NI- 780
MRF9135LR3
M
M
ccc B
aaa B
A
T
M
A
T
(LID)
R
M
(INSULATOR)
S
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
A 1.335 1.345 33.91 34.16
B 0.380 0.390 9.65 9.91
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
M
M
F
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
G 1.100 BSC 27.94 BSC
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
M 0.774 0.786 19.66 19.96
N 0.772 0.788 19.60 20.00
Q .118 .138 3.00 3.51
R 0.365 0.375 9.27 9.53
S 0.365 0.375 9.27 9.52
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERSINCHES
U
4X
(FLANGE)
B
B
(FLANGE)
HIVE INF
D
M
bbb B
T
AR
H
E
A
A
(FLANGE)
Z
4X
1
2
M
A
3
(LID)
K
2X
M
(LID)
N
M
ccc B
(INSULATOR)
M
M
bbb B
C
SEATING
T
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
A 0.805 0.815 20.45 20.70
B 0.380 0.390 9.65 9.91
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
(LID)
M
A
T
A
T
M
M
M
M
ccc B
M
aaa B
R
M
(INSULATOR)
S
M
M
M
A
T
A
T
F
CASE 465A- 06
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
M 0.774 0.786 19.61 20.02
N 0.772 0.788 19.61 20.02
R 0.365 0.375 9.27 9.53
S 0.365 0.375 9.27 9.52
U −−− 0.040 −−− 1.02
Z −−− 0.030 −−− 0.76
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERSINCHES
ARCHIVE INFORMATION
ISSUE H
NI- 780S
MRF9135LSR3
RF Device Data
Freescale Semiconductor
MRF9135LR3 MRF9135LSR3
11
Page 12
C
O
O
N
How to Reach Us:
Home Page:
www.freescale.com
E-mail:
support@freescale.com
USA/Europe or Locations Not Listed:
Freescale Semiconductor
RMATI
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1-800- 521 - 6274 or +1 - 480 - 768-2130
support@freescale.com
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
support@freescale.com
Japan:
HIVE INF
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1- 8 - 1, Shimo - Meguro, Meguro -ku,
Tokyo 153- 0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
AR
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1-800 - 441 - 2447 or 303 - 675-2140
Fax: 303-675 - 2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2008. All rights reserved.
ARCHIVE INFORMATION
MRF9135LR3 MRF9135LSR3
Document Number: MRF9135L
Rev. 8, 5/2006
12
RF Device Data
Freescale Semiconductor
Loading...