Datasheet MRF904 Datasheet (Microsemi Corporation)

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]

RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS

Features

• Silicon NPN, high Frequency, To-72 packaged, Transistor

• High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz

7 dB (typ) @ f = 1 GHz

• Low Noise Figure

NF = 1.5 dB (typ) @ f = 450 MHz

• High FT - 4 GHz (typ) @ IC = 15 mAdc

MRF904

2

1

3

4

TO-72

1. Emitter

2. Base

3. Collector

4. Case

DESCRIPTION:

Designed primarily for use IN High Gain, low noise general purpose amplifiers.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol Parameter Value Unit

V

CEO

V

CBO

V

EBO

I

C

Collector-Emitter Voltage 15 Vdc

Collector-Base Voltage 25 Vdc

Emitter-Base Voltage 3.0 Vdc

Collector Current 30 mA

Thermal Data

P

D

Total Device Dissipation @ TA = 25ºC
Derate above 25ºC

200

1.14

mWatts
mW/ ºC

MSC1324.PDF 10-25-99

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)

STATIC
(off)

Symbol Test Conditions Value

BVCEO Collector-Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0) 15 - - Vdc

BVCBO Collector-Base Breakdown Voltage

(IC= .1 mAdc, IE=0) 25 - - Vdc

BVEBO Emitter-Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0) 3.0 - -

ICBO Collector Cutoff Current

(VCE = 15 Vdc, IE = 0 Vdc) - - 50 nA

(on)

HFE DC Current Gain

(IC = 5.0 mAdc, VCE = 5 Vdc) 30 - 200

MRF904

Min. Typ. Max. Unit

Vdc

-

DYNAMIC

Symbol Test Conditions Value

Min. Typ. Max. Unit

f

T

CCB

NF

MSC1324.PDF 10-25-99

Current-Gain - Bandwidth Product
(IC = 15 mAdc, VCE = 10 Vdc, f = 1 GHz) - 4.0 - GHz

Junction Capacitance
(VCB = 10Vdc, IE=0, f=1 MHz) - 1.0 1.5 pF

Noise Figure
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz) - 1.5 - dB

Functional

Symbol Test Conditions Value

GU

S

MAG

max

|21|

Maximum Unilateral Gain (1)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz)

Maximum Available Gain (1)

2

(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz)

Maximum Available Gain (1)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz)

(1) Maximum Unilateral Gain = |S21|

2

/ (1 - |S11|2) (1 - |S22|2)

MRF904

Min. Typ. Max. Unit

9.5

-

-

-

-

-

11

7

10.5

6.5

11

7

-

-

-

-

-

-

dB

dB

dB

Table 1. Common Emitter S-Parameters, @ VCE = 5 V, IC = 6 mA

(MHz) |S11|

100 .66 -37 10.5 131 .040 71 .781 -23
200 .41 -52 7.03 111 .065 71 .597 -27
300 .31 -54 5.33 98 .093 70 .551 -26
400 .26 -59 4.00 90 .111 69 .517 -30
500 .20 -61 3.38 87 .136 71 .467 -30
600 .18 -59 3.00 81 .162 68 .455 -32
700 .16 -60 2.69 75 .186 66 .438 -36
800 .16 -66 2.30 70 .200 63 .437 -42
900 .15 -74 2.16 71 .215 65 .409 -47

1000 .15 -76 2.16 63 .243 62 .413 -48

∠ φ

|S21|

∠ φ

|S12|

∠ φ

|S22|

∠ φ

MSC1324.PDF 10-25-99

MRF904

MSC1324.PDF 10-25-99