39
MRF898MOTOROLA RF DEVICE DATA
The RF Line
. . . designed for 24 Volt UHF large–signal, common base amplifier applications
in i ndustrial and c ommercial FM e quipment o perating i n the r ange o f
850–960 MHz.
• Motorola Advanced Amplifier Concept Package
• Specified 24 Volt, 900 MHz Characteristics
Output Power = 60 Watts
Power Gain = 7.0 dB Min
Efficiency = 60% Min
• Double Input/Output Matched for Wideband Performance and Simplified
External Matching
• Series Equivalent Large–Signal Characterization
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Silicon Nitride Passivated
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
30 Vdc
Collector–Base Voltage V
CBO
55 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
10 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
175
1.0
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
1.0 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V
(BR)CEO
30 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V
(BR)CES
55 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0, TC = 25°C)
I
CES
— — 10 mAdc
(continued)
Order this document
by MRF898/D
SEMICONDUCTOR TECHNICAL DATA
60 W, 850–960 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 333A–02, STYLE 1
Motorola, Inc. 1994
REV 6
MRF898
40
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
h
FE
20 50 150 —
DYNAMIC CHARACTERISTICS
Output Capacitance (1)
(VCB = 24 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 60 — pF
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 24 Vdc, P
out
= 60 W, f = 900 MHz)
G
pb
7.0 7.9 — dB
Collector Efficiency
(VCC = 24 Vdc, P
out
= 60 W, f = 900 MHz)
η 60 65 — %
Output Mismatch Stress
(VCC = 24 Vdc, P
out
= 60 W, f = 900 MHz,
VSWR = 5:1, all phase angles)
ψ
No Degradation in Output Power
NOTE:
1. Value of “Cob” is that of die only. It is not measurable in MRF898 because of internal matching network.
Figure 1. 850–960 MHz Broadband Test Circuit
B1, B2, B3 — Bead, Ferroxcube 56–390–65/3B
C1, C2, C12 — 39 pF, 100 Mil Chip Capacitor
C3, C11 — 91 pF, Mini Underwood or Equivalent
C4, C7, C9 — 10 µF, 35 V Electrolytic
C5 — 4000 pF, 1.0 kV Ceramic
C6, C10 — 1000 pF, 350 V Unelco or Equivalent
C8 — 47 pF, 100 Mil Chip Capacitor
L1, L4 — 4 Turns #18 AWG Choke
L2 — 11 Turns #20 AWG Choke on 10 Ohm, 1.0 Watt Resistor
L3 — 3 Turns #18 AWG Choke on 10 Ohm, 1.0 Watt Resistor
TL1, TL6 — 50 Ohm Microstrip
TL2 — 400 x 950 Mils
TL3, TL4 — 140 x 200 Mils
TL5 — 320 x 690 Mils
TL7 — 260 x 230 Mils
Board — 3M Epsilam–10, 50 Mil
Bias Boards — 1/32″ G10 or Equivalent
SHORTING
PLUG
50
OHMS
C1
C10
+ V
CC
GND
DUT
TL1
50
OHMS
B3 B1
V
RE
L3
TL2 TL3
TL7
TL4 TL5 TL6
C11
GND
L4
C2
C3
+
B2 C4
C5 C6 C7 C8
+
L2
L1
C12
C9
41
MRF898MOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency
Figure 4. Output Power versus Supply Voltage Figure 5. Typical Broadband Circuit Performance
Figure 6. Input/Output Impedance versus Frequency
P
o
, OUTPUT POWER (WATTS)
Pin, INPUT POWER (WATTS)
960 MHz
VCC = 24 V
86
900 MHz
100
80
60
40
20
0
10 12 14 16 18
850 MHz
f, FREQUENCY (MHz)
850 900 950
P
o
, OUTPUT POWER (WATTS)
100
80
60
40
20
0
Pin = 16 W
Pin = 14 W
12 W
VCC = 24 V
P
o
, OUTPUT POWER (WATTS)
VCC, SUPPLY VOLTAGE (VOLTS)
20
100
80
60
40
20
0
22 24 26 28
Pin = 14 W
f = 900 MHz
G
PA
η
c
900850
G
PA
, POWER GAIN (dB)
10
8
6
4
Pin = 12 W
VCC = 24 V
70
60
50
960
2
1.3
VSWR
80
INPUT
f, FREQUENCY (MHz)
1.2
1.1:1
c
η
, COLLECTOR EFFICIENCY (%)
40
30
20
10
0
90
100
VSWR
0
10 W
8 W
12 W
10 W
8 W
Z
in
f = 850 MHz
960
900
ZOL*
f = 850 MHz
900
960
Po = 60 W, VCC = 24 V
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device operates at a given
ZOL* = output power, voltage and frequency.
F
MHz
Z
in
Ohms
ZOL*
Ohms
850 11.2 + j2.3 4.0 + j3.9
900 8.2 – j1.0 4.4 + j1.8
960 4.7 – j2.0 5.3 + j3.7
MRF898
42
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 333A–02
ISSUE C
DIMAMIN MAX MIN MAX
MILLIMETERS
0.965 0.985 24.52 25.01
INCHES
B 0.390 0.410 9.91 10.41
C 0.250 0.290 6.35 7.36
D 0.075 0.090 1.91 2.28
E 0.095 0.115 2.42 2.92
F 0.110 0.130 2.80 3.30
H 0.155 0.175 3.94 4.44
J 0.004 0.006 0.11 0.15
K 0.090 0.116 2.29 2.94
L 0.725 BSC 18.41 BSC
N 0.415 0.435 10.55 11.04
Q 0.120 0.135 3.05 3.42
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. BASE
2. EMITTER
3. BASE
4. BASE
5. COLLECTOR
6. BASE
IDENTIFICATION
NOTCH
N
L
E
J
H
C
SEATING
PLANE
1 2 3
4 5 6
K 2 PL
D 4 PL
F 2 PL
Q 2 PL
–B–
M
A
M
0.13 (0.005) B
M
T
–A–
–T–
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 T anners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MRF898/D
*MRF898/D*
◊
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