Datasheet MRF897R Datasheet (Motorola)

1

MRF897RMOTOROLA RF DEVICE DATA

The RF Line

 
  

Designed for 24 Volt UHF large–signal, common emitter, class–AB linear
amplifier applications in industrial and commercial FM/AM equipment operating
in the range 800–970 MHz.

• Specified 24 Volt, 900 MHz Characteristics

Output Power = 30 Watts
Minimum Gain = 10.5 dB @ 900 MHz, class–AB
Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP)
Maximum Intermodulation Distortion –30 dBc @ 30 Watts (PEP)

• Characterized with Series Equivalent Large–Signal Parameters from 800

to 960 MHz

• Silicon Nitride Passivated

• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR

@ 26 Vdc, and Rated Output Power

• Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal–

Migration

• Circuit Board Photomaster Available by Ordering Document

MRF897RPHT/D from Motorola Literature Distribution.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

30 Vdc

Collector–Emitter Voltage V

CES

60 Vdc

Emitter–Base Voltage V

EBO

4.0 Vdc

Collector–Current — Continuous I

C

4.0 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

105

0.60

Watts

W/°C

Storage Temperature Range T

stg

–65 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

1.67 °C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V

(BR)CEO

30 33 — Vdc

Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V

(BR)CES

60 80 — Vdc

Emitter–Base Breakdown Voltage (IE = 5 mAdc, IC = 0) V

(BR)EBO

4.0 4.7 — Vdc

Collector Cutoff Current (VCE = 30 Vdc, VBE = 0, TC = 25°C) I

CES

— — 10.0 mAdc

ON CHARACTERISTICS

DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc) h

FE

30 80 120 —

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) C

ob

14 21 28 pF

(continued)

Order this document

by MRF897R/D



SEMICONDUCTOR TECHNICAL DATA



30 W, 900 MHz

RF POWER
TRANSISTOR
NPN SILICON

CASE 395B–01, STYLE 1

 Motorola, Inc. 1995

MRF897R
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

FUNCTIONAL CHARACTERISTICS

Common–Emitter Amplifier Power Gain

(VCC = 24 Vdc, P

out

= 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,

f2 = 900.1 MHz)

G

pe

10.5 12.0 — dB

Collector Efficiency

(VCC = 24 Vdc, P

out

= 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,

f2 = 900.1 MHz)

η 30 38 — %

Intermodulation Distortion

(VCC = 24 Vdc, P

out

= 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,

f2 = 900.1 MHz)

IMD — –37 –30 dBc

Output Mismatch Stress

(VCC = 26 Vdc, P

out

= 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,

f2 = 900.1 MHz, Load VSWR = 5:1 (all phase angles))

ψ No Degradation in Output Power

COAX 1

BALUN 1

INPUT

TL2

TL1

C1

C2

C3

TL4

TL3

TL5

TL6

C10

DUT

R3

B1

TL7

TL8

C15

C20

C23

C24

C4

C25

L3

C6

+

V

B

R1

V

BB

Q1

C8

TL11

OUTPUT

COAX 2

BALUN 2

TL9

TL10

B3

C16

L7

C21

C18

V

CC

R5

L5

C11

+

C13

+

C9

L1

L2

B2

L4

R4

C5C26

C7

+

V

B

R2

V

BB

L8

C17

B4

C22 C19

L6

R6

C12+C14

+

V

CC

B1, B2, B3, B4 — Short Ferrite Bead, Fair Rite #2743019447
C1 — 0.8–8.0 pF Var Capacitor, Johansen Gigatrim
C2, C3, C23, C24 — 43 pF, 100 mil, ATC Chip Capacitor
C4, C5, C21, C22 — 1000 pF, 100 mil, ATC Chip Capacitor
C6, C7, C11, C12 — 10 µF, Electrolytic Capacitor, Panasonic
C8, C9, C16, C17 — 100 pF, 100 mil, ATC Chip Capacitor
C10 — 9.1 pF, 50 mil, ATC Chip Capacitor
C13 — 250 µF Electrolytic Capacitor, Mallory
C14, C18, C19, C25 — 0.1 µF, Chip Capacitor, Kemet
C15 — 1.1 pF, 50 mil, ATC Chip Capacitor
C20 — 6.8 pF, 100 mil, ATC Chip Capacitor
L1, L2, L3, L4, L5, L6, L7, L8 — 5 Turns 20 AWG,

IDIA 0.126″ Choke, Taylor Spring 46 nH

Figure 1. 840–900 MHz Test Circuit Schematic

N1, N2 — Type N Flange Mount, Omni Spectra 3052–1648–10
Q1 — Bias Transistor BD136 PNP
R1, R12 — 27 Ohm, 2.0 W
R3, R4, R5, R6 — 4.0 x 39 Ohm, 1/8 W, Chips Resistors in

R3, R4, R5, R6 — Parallel, Rohm 390–J

SB1 — 0.15″ x 0.3″ x 0.03″ Cu
TL1–TL11 — Microstrip Line, See Photomaster
Balun1, Balun2, Coax 1, Coax 2 — 2.20″ 50 Ohm, 0.086″ o.d.

Balun1, Balun2, Coax 1, Coax 2 — semi–rigid coax, Micro Coax
Balun1, Balun2, Coax 1, Coax 2 — UT–85–M17

Circuit Board — 1/32″ Glass Teflon, Arlon GX–0300–55–22,

Circuit Board — εr = 2.55

3

MRF897RMOTOROLA RF DEVICE DATA

G

PE

η

INPUT VSWR

P , OUTPUT POWER (WATTS)

out

P , OUTPUT POWER (WATTS)

out

P , OUTPUT POWER (WATTS)

out

, EFFICIENCY (%)

η

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency

Figure 4. Output Power versus Supply Voltage Figure 5. Intermodulation versus Output Power

2.5 3.00.0 1.00.5 1.5 2.0

Pin, INPUT POWER (WATTS)

f, FREQUENCY (MHz)

800 820 840 880 920 960

860

900 940

VCC, SUPPLY VOLTAGE (VOLTS)

14 16 18 22 26 3020 24 28

Figure 6. Power Gain versus Output Power Figure 7. Broadband Test Fixture Performance

10

0.01 10.1
P

out

, OUTPUT POWER, (WATTS)

G , POWER GAIN (dB)

PE

890 900

840 850 860 870 880

50

45

40

35

30

20

25

f, FREQUENCY (MHz)

G , POWER GAIN (dB)

PE

1.0 1.5 2.0

INPUT VSWR

P

out

, OUTPUT POWER (WATTS–PEP)

IMD, INTERMODULATION DISTORTION (dBc)

5 10 20 3015 25 35

45
40
35
30

15

0

5

10

25
20

45
40
35
30

15

0

5

10

25
20

45

40
35
30

15

0

5

10

25
20

14.0

13.5

13.0

12.5

12.0

9.0

10.5

11.5

11.0

10.0

9.5

12

11

10

9

8

6

7

–25
–30
–35
–40

–55

–70

–65

–60

–45
–50

0

VCC = 24 Vdc
ICQ = 125 mA

960 MHz

900 MHz

f = 800 MHz

VCC = 24 Vdc
ICQ = 125 mA

Pin = 3 W

2.5 W
2 W

1.5 W

1 W

0.5 W

Pin = 2.5 W

1.5 W

0.5 W

f = 900 MHz
ICQ = 125 mA

f1 = 900 MHz
f2 = 900.1 MHz
VCC = 24 Vdc
ICQ = 125 mA

3RD ORDER

7TH

5TH

ICQ = 400 mA

300 mA

250 mA
200 mA

125 mA

f = 900 MHz
VCC = 24 Vdc
ICQ = 125 mA

P

out

= 30 W (PEP)
VCC = 24 Vdc
ICQ = 125 mA

MRF897R
4

MOTOROLA RF DEVICE DATA

Figure 8. Series Equivalent Input/Output Impedances

Z

in

f = 800 MHz

960

850

900

ZOL*

Zo = 10 Ohms

P

out

= 30 W (PEP), VCC = 24 V

f = 800 MHz

850

900

960

NOTE: Zin & ZOL* are given from base–to–base and collector–to–collector respectively.

ZOL* = Conjugate of the optimum load impedance

ZOL* = into which the device operates at a given
ZOL* = output power, voltage and frequency.

f

MHz

Z

in

Ohms

ZOL*

Ohms

800 1.7 + j9.2 5.9 – j0.4
850 2.6 + j10 5.7 + j2.6
900 4 + j9.9 5.9 + j3.4

950 5 + j8.8 6.2 + j4.4

Figure 9. 840–900 MHz Test Circuit Component Layout

R1

SB1

C6

C25

R3

L3

C4

B1

C8

C2

L1

Q1

C18
C21

L5

R5

B3

C16

L7

C11

C13

C20

C23

C15

C24

C10

C3

C1

L2

C9

L8

C17

B4

C22

R6

C19

L6

C12

L4

R4

B2

C5

C14

C7

R2

COAX1

BALUN1

BALUN2

COAX2

MRF897R

5

MRF897RMOTOROLA RF DEVICE DATA

PACKAGE DIMENSIONS

CASE 395B–01

ISSUE A

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. BASE

2. BASE

3. COLLECTOR

4. COLLECTOR

5. EMITTER

–A–

–B–

K

G

D

U

1 2

3 4

5

2 PLQ

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.739 0.750 18.77 19.05
B 0.240 0.260 6.10 6.60
C 0.165 0.198 4.19 5.03
D 0.055 0.065 1.40 1.65
E 0.055 0.070 1.40 1.78
G 0.110 0.130 2.79 3.30
H 0.079 0.091 2.01 2.31
J 0.003 0.005 0.08 0.13
K 0.180 0.220 4.57 5.59
N 0.315 0.330 8.00 8.38
Q 0.125 0.135 3.18 3.42
U 0.560 BSC 14.22 BSC

M

A

M

0.51 (0.020) B

M

T

H

J

N

E

C

SEATING
PLANE

–T–

MRF897R
6

MOTOROLA RF DEVICE DATA

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and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
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MRF897R/D

*MRF897R/D*

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