Page 1
1
MRF858 MRF858SMOTOROLA RF DEVICE DATA
The RF Line
Designed for 24 Volt UHF l arge–signal, common e mitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800–960 MHz.
• Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics
Output Power = 3.6 Watts CW
Minimum Power Gain = 11 dB
Minimum ITO = +44.5 dBm
Typical Noise Figure = 6 dB
• Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800–960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.5 Adc and Rated Output Power
• Will Withstand RF Input Overdrive of 0.85 W CW
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
30 Vdc
Collector–Base Voltage V
CBO
55 Vdc
Emitter–Base Voltage V
EBO
4 Vdc
Total Device Dissipation @ TC = 50°C
Derate above 50°C
P
D
20
0.138
Watts
W/°C
Operating Junction Temperature T
J
200 °C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance (TJ = 150°C, TC = 50°C) R
θJC
6.9 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0) V
(BR)CEO
28 35 — Vdc
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) V
(BR)CES
55 85 — Vdc
Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0) V
(BR)CBO
55 85 — Vdc
Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0) V
(BR)EBO
4 5 — Vdc
Collector Cutoff Current (VCB = 24 V, IE = 0) I
CES
— — 1 mA
(continued)
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
Order this document
by MRF858/D
SEMICONDUCTOR TECHNICAL DATA
CLASS A
800–960 MHz
3.6 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE 319–07, STYLE 2
MRF858
CASE 319A–02, STYLE 2
MRF858S
Motorola, Inc. 1995
REV 2
Page 2
MRF858 MRF858S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 A, VCE = 5 V)
h
FE
30 60 120 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, f = 1 MHz)
C
ob
— 6.5 8 pF
FUNCTIONAL CHARACTERISTICS
Common–Emitter Power Gain
(VCE = 24 V, IC = 0.5 A, f = 840–900 MHz,
Power Output = 3.6 W)
P
g
11 12 — dB
Load Mismatch
(Po = 3.6 W)
(VCE = 24 V, IC = 0.5 A, f = 840 MHz,
Load VSWR = 30:1, All Phase Angles)
ψ
No Degradation in
Output Power
RF Input Overdrive
(VCE = 24 V, IC = 0.5 A, f = 840 MHz)
No degradation
P
in(over)
— — 0.85 W
Third Order Intercept Point
(VCE = 24 V, IC = 0.5 A)
(f1 = 900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order = –40 dBc)
ITO +44.5 +45.5 — dBm
Noise Figure
(VCE = 24 V, IC = 0.5 A, f = 900 MHz)
NF — 6 — dB
Input Return Loss
(VCE = 24 V, IC = 0.5 A, f = 840–900 MHz,
Power Output = 3.6 W)
IRL — –12 –9 dB
Table 1. MRF858 Common Emitter S–Parameters
S
11
S
21
S
12
S
22
V
CE
(V)
I
C
(A)
f
(MHz)
|S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
24 0.5 800
820
840
860
880
900
920
940
960
0.942
0.942
0.941
0.940
0.941
0.940
0.940
0.940
0.940
167
166
166
166
165
165
165
164
164
1.493
1.453
1.415
1.379
1.351
1.320
1.289
1.252
1.222
50
50
49
48
47
46
45
44
43
0.027
0.027
0.028
0.028
0.029
0.030
0.030
0.031
0.031
58
58
59
59
59
59
59
59
59
0.538
0.541
0.545
0.550
0.553
0.557
0.562
0.566
0.570
–165
–164
–165
–165
–165
–165
–165
–165
–165
Table 2. Zin and ZOL* versus Frequency
f
(MHz)
Z
in
(Ohms)
ZOL*
(Ohms)
840
870
900
1.1
1.1
1.2
2.9
3.5
3.5
9.9
9.5
9
–14.4
–14.6
–14.5
VCE = 24 V, IC = 0.5 A, Po = 3.6 W
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
Page 3
3
MRF858 MRF858SMOTOROLA RF DEVICE DATA
B1, B2 Short Ferrite Bead, Fair Rite (2743021447)
C1 250 µF, 50 Vdc Electrolytic Capacitor
C2, C5 10 µF, 50 Vdc Electrolytic Capacitor
C3, C6 0.1 µF, Chip Capacitor
C4, C7 100 pF, Chip Capacitor
C8, C15 43 pF, 100 Mil Chip Capacitor
C9, C10 10 pF, Mini–Unelco
C11 5 pF, Mini–Unelco
C12, C13, C14 0.8–8.0 pF, Johanson Gigatrim
C15, C16 1000 pF, Chip Capacitor
F1 1 A Micro–Fuse
L1, L2 10 Turns, 20 AWG, 0.150″ ID (10 Ω 1/2 W Resistor)
L3 4 Turns, 16 AWG, 0.101″ ID
L4 0.5″ 18 AWG Wire
Q1 MMBT2222ALT1, NPN Transistor
Q2 BD136, PNP Transistor
R1 390 Ω, 1/4 W
R2 500 Ω Potentiometer, 1/4 W
R3 7.5K Ω, 1/4 W
R4 2 x 4.7K Ω, 1/4 W
R5 56 Ω, 2 W
R6 75 Ω, 1/4 W
R7 4.7 Ω, 1/4 W
R8 4 Ω, 10 W
TL1, TL5 50 Ω, Microstrip Transmission Line
TL2 Microstrip Transmission Line
TL3 Microstrip Transmission Line
TL4 Microstrip Transmission Line
V_Supply +26 Vdc ±0.5 Vdc Due to Resistor Tolerance
V
CE
+24 Vdc @ 0.5 A
Board 0.030″ Glass–Teflon 2 oz. Cu, εr = 2.55
Figure 1. MRF858 Class A RF Test Fixture Schematic
R1
R2
R3
R8
R5
R6
L3
C7 C5
C14
C13C12
TL2
C9
Q1
R4
C4
L4
C6
OUTPUT
C10
C2 C3
B1
C1
V_SUPPLY
Q2
+
+
+
INPUT
V
CE
L1
L2
B2
TL4
C15 TL5
0.685
″
DUT
TL3
C8TL1
R7
C15
F1
C16
C11
Page 4
MRF858 MRF858S
4
MOTOROLA RF DEVICE DATA
8.57E+05
MTBF FACTOR (HOURS x AMPS
2
)
P , OUTPUT POWER (WATTS)
out
G
pe
, POWER GAIN (dB)
G
pe
, POWER GAIN (dB)
830 910
f, FREQUENCY (MHz)
Figure 2. Performance in Broadband Circuit
TYPICAL CHARACTERISTICS
13.5
13
12.5
10.5
840 850 860 870 880 890 900
G
pe
4
3.5
3
2.5
2
1.5
1
VSWR
in
, INPUT VSWR
VSWR
VCC = 24 Vdc
IC = 500 mA
P
out
= 3.6 W (CW)
7
6
5
0
Pin, INPUT POWER (WATTS)
Figure 3. Output Power & Power Gain versus
Input Power
4
3
2
0
0.1 0.2 0.3
G
pe
15
1
4
13
1
2
11
8
P
out
VCC = 24 Vdc
IC = 500 mA
f = 870 MHz
1
0.4 0.5 0.6 1
10
9
2000
0
VCE (Vdc)
Figure 4. DC SOA
0
Tj = 150
°
C
Tf = 50
°
C
1000
500
I
C
(mAdc)
1100
0
VCE (Vdc)
Figure 5. DC SOA
(This device is MTBF limited for VCE < 20 Vdc.)
50
0
Tj = 175
°
C
Tf = 50
°
C
I
C
(mAdc)
1000
900
800
700
600
1.00E+08
100
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 6. MTBF Factor versus
Junction Temperature
1.00E+07
1.00E+06
1.00E+05
1.00E+04
1.00E+03
120 140 160 180 200 220 240 260
11.5
12
11
0.7 0.8 0.9
1500
2 4 6 8 10 12 14 16 18 20 22 24 26 28
2 4 6 8 10 12 14 16 18 20 22 24 26 28
1.72E+07
3.58E+06
2.34E+05
7.17E+04
2.43E+04
8.98E+03
3.59E+03
1.53E+03
Page 5
5
MRF858 MRF858SMOTOROLA RF DEVICE DATA
Figure 7. MRF858 Test Fixture Component Layout
R3 R2 R1
Q1
R5
R6
R7
Q1
C4
C9
L3
C8
B1
C12
C10
C5
C6
B2
L2
L4
C7
R8
C15
C11
C13
C14
R4
C15
+
MRF858
C11
C16
+
C2
C3
L1
Page 6
MRF858 MRF858S
6
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 319–07
ISSUE M
MRF858
0.965
0.355
0.230
0.115
0.102
0.075
0.160
0.004
0.090
0.225
0.125
0.985
0.375
0.260
0.125
0.114
0.085
0.170
0.006
0.110
0.241
0.135
24.52
9.02
5.85
2.93
2.59
1.91
4.07
0.11
2.29
5.72
3.18
25.01
9.52
6.60
3.17
2.90
2.15
4.31
0.15
2.79
6.12
3.42
MM
MIN MINMAX MAX
INCHES MILLIMETER
DIM
A
B
C
D
E
F
H
J
K
L
N
Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.725 BSC 18.42 BSC
SEATING
PLANE
IDENTIFICATION
NOTCH
1 2 3
456
F
J
B
H
E
K
L
0.15 (0.006) T A N
M
-A-
-N-
-T-
Q 2 PL
D 2 PL
MM
0.38 (0.015) T A N
M
MM
0.38 (0.015) T A N
M
C
PIN 1. EMITTER (COMMON)
2. BASE (INPUT)
3. EMITTER (COMMON)
4. EMITTER (COMMON)
5. COLLECTOR (OUTPUT)
6. EMITTER (COMMON)
STYLE 2:
CASE 319A–02
ISSUE B
MRF858S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. EMITTER
5. COLLECTOR
6. EMITTER
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.355 0.365 9.02 9.27
B 0.225 0.235 5.72 5.96
C 0.110 0.125 2.80 3.17
D 0.115 0.125 2.93 3.17
F 0.075 0.085 1.91 2.15
H 0.035 0.045 0.89 1.14
J 0.004 0.006 0.11 0.15
K 0.090 0.110 2.29 2.79
IDENTIFICATION
NOTCH
SEATING
PLANE
6 5 4
1 2 3
A
K
B
D
F
C
J
H
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
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MRF858/D
*MRF858/D*
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