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NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
MRF846
The
MRF846
is Designed for UFH
Large-Signal, Common Base Amplifier
Applicatons Up to 960 MHz.
FEATURES INCLUDE:
Input Matching Network
•
Min Gain 4.3 dB
•
Gold Metalization
•
MAXIMUM RATINGS
IC
V
CBO
V
CEO
150 W @ T
O
-55
C to +200 OC
O
C to +150 OC
-55
1.17
P
T
DISS
TJ
STG
θθθθ
JC
14 A
36 V
16 V
= 25 OC
C
O
C/W
PACKAGE STYLE .230 6L FLG
A
B
C
.040x45°
4X .025 R
.115
D
.430
E
.125
I
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MINIMUM
inches / mm
.355 / 9.02 .365 / 9.27
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.720 / 18.2 9
.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06 .180 / 4.57
.230 / 5.84
1 & 3 & 4 & 6 = BASE 2 = EMITTER
G
5 = COLLECTOR
F
H
2XØ.130
J
MAXIMUM
inches / mm
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.5 4
.980 / 24.8 9.970 / 24.6 4
.365 / 9.27
.006 / 0.15
.130 / 3.30
.260 / 6.60
L
K
CHARACTERISTICS
TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
I
BV
CES
BV
CEO
BV
EBO
I
CBO
hFE
COB
P
G
ηηηη
C
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
= 50 mA 36
C
I
= 50 mA 16
C
I
= 100 mA 4.0
E
V
= 15 V 10
CE
V
= 5.0 V IC = 2.0 mA 10 150
CE
V
= 12.5 V f = 1.0 MHz 85 100
CB
= 12.5 V ICQ = 50mA P
V
CE
f = 870 MHz
Specifications are subject to change without notice.
= 40 W
OUT
4.3
50
5.2
55
V
V
V
mA
--pF
dB
%
REV. A
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