Page 1
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed primarily for wideband large signal predriver stages in 800 MHz
and UHF frequency ranges.
• Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 750 mW
Minimum Gain = 8.0 dB
Efficiency 60% (Typ)
• State–of–the–Art Technology
Fine Line Geometry
Gold Top Metal and Wires
Silicon Nitride Passivated
Ion Implanted Arsenic Emitters
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
• Order MRF8372 in tape and reel packaging by adding suffix:
R1 suffix = 500 units per reel
R2 suffix = 2,500 units per reel
Order this document
by MRF8372/D
750 mW, 870 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
CASE 751–05, STYLE 1
SORF (SO–8)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TC = 75°C (1)
Derate above 75°C
Storage Temperature Range TJ, T
Maximum Junction Temperature T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
DEVICE MARKING
MRF8372 = 8372
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
CEO
CBO
EBO
C
P
D
stg
Jmax
θJC
16 Vdc
36 Vdc
4.0 Vdc
200 mAdc
1.67
22.2
–55 to +150 °C
150 °C
45 °C/W
Watts
mW/°C
Motorola, Inc. 1997
(Replaces MRF837/D)
MRF8372R1, R2MOTOROLA RF DEVICE DATA
1
Page 2
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 5.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, P
Collector Efficiency
(VCC = 12.5 Vdc, P
= 0.75 W, f = 870 MHz)
out
= 0.75 W, f = 870 MHz)
out
= 25°C unless otherwise noted.)
C
V
V
V
(BR)CEO
(BR)CES
(BR)EBO
I
CES
h
FE
C
ob
G
pe
η 55 60 — %
16 — — Vdc
36 — — Vdc
4.0 — — Vdc
— — 0.1 mAdc
30 90 200 —
— 1.8 2.5 pF
8.0 10 — dB
MRF8372R1, R2
2
MOTOROLA RF DEVICE DATA
Page 3
C6
B
L1 L2
Z1 Z2 Z3 Z4 DUT
C1
C2 C3
L3
B
C7 C8
C4
Z6Z5
C5
+
+
V
CC
–
C1, C5 — 0.8–8.0 pF Johanson Gigatrim
C2, C3 — 10 pF Ceramic Chip Capacitor
C6 — 91 pF Clamped Mica, Mini–Underwood
C4 — 47 pF Ceramic Chip Capacitor
C7 — 91 pF Clamped Mica, Mini–Underwood
C8 — 1.0 µF 25 V Tantalum
B — Bead, Ferroxcube 56–590–65/3B
Figure 1. 800–900 MHz Broadband Circuit
800/900 MHz BAND DATA
12
10
8
, GAIN (dB)
6
PE
G
4
2
820 840 860 880 900800
f, FREQUENCY (MHz)
G
η
IRL
PE
c
L1, L2 — 4 Turns, #21 AWG, 5/32″ ID
L3 — 7 Turns, #21 AWG, 5/32″ ID
Z1, Z2 — 1″ x 0.078″ Microstrip, Zo = 50 Ohms
Z3 — 0.25″ x 0.078″ Microstrip, Zo = 50 Ohms
Z4 — 0.15″ x 0.078″ Microstrip, Zo = 50 Ohms
Z5 — 0.30″ x 0.078″ Microstrip, Zo = 50 Ohms
Z6 — 1.63″ x 0.078″ Microstrip, Zo = 50 Ohms
PCB — 1/32″ Glass Teflon, εr = 2.56
P
= 750 mW
out
VCC = 12.5 Vdc
70
60
, COLLECTOR
c
EFFICIENCY (%)
50
η
10
15
20
25
IRL, INPUT
RETURN LOSS (dB)
Figure 2. T ypical Broadband Performance
MRF8372R1, R2MOTOROLA RF DEVICE DATA
3
Page 4
Z
in
Ohms
VCC = 7.5 V VCC = 12.5 V VCC = 7.5 V VCC = 12.5 V
P
f
Frequency
MHz
806 8.0 + j1.9 4.0 + j1.2 24.7 – j19.2 20.9 – j31.0
870 5.2 + j3.5 6.0 + j1.9 36.9 – j20.5 32.1 – j26.6
960 6.8 + j4.0 6.1 + j2.5 39.3 – j18.5 36.3 – j25.7
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage, and frequency.
Pin = 150 mW Pin = 100 mW
= 806 MHz = 820 mW
out
P
= 870 MHz = 635 mW
out
P
= 960 MHz = 530 mW
out
ZOL*
Ohms
P
= 806 MHz = 1.05 mW
out
P
= 870 MHz = 855 mW
out
P
= 960 MHz = 580 mW
out
T able 1. Series Equivalent Input/Output Impedance
TYPICAL CHARACTERISTICS
800/900 MHz BAND DATA (continued)
1200
VCC = 12.5 Vdc
900
600
out
300
P , OUTPUT POWER (mW)
0
0 30 60 90 120 150
15 45 75 105 135
Pin, INPUT POWER (mW)
7.5 Vdc
Figure 3. Output Power versus Input Power
f = 870 MHz
1200
Pin = 150 mW
900
100 mW
1000
Pin = 150 mW
500
out
P , OUTPUT POWER (mW)
0
800 820 840 860 880 900 920 940 960
f, FREQUENCY (MHz)
Figure 4. Output Power versus Frequency
VCC = 7.5 Vdc
1600
1200
Pin = 150 mW
100 mW
50 mW
600
50 mW
out
300
P , OUTPUT POWER (mW)
0
6 8 10 12 14 16
VCC, COLLECTOR VOL TAGE (Vdc)
f = 870 MHz
800
out
400
P , OUTPUT POWER (mW)
0
800 820 840 860 880 900 920 940 960
f, FREQUENCY (MHz)
Figure 5. Output Power versus Collector Voltage Figure 6. Output Power versus Frequency
MRF8372R1, R2
MOTOROLA RF DEVICE DATA
4
100 mW
50 mW
VCC = 12.5 Vdc
Page 5
TYPICAL CHARACTERISTICS
800/900 MHz BAND DATA (continued)
1600
1400
1200
1000
800
600
out
400
P , OUTPUT POWER (mW)
200
1400
1200
1000
800
600
400
out
P , OUTPUT POWER (mW)
200
1200
1000
VCC = 12.5 Vdc
7.5 Vdc
0
0
10
20 30 40 50 60 70 80
Pin, INPUT POWER (mW)
f = 512 MHz
800
600
400
out
P , OUTPUT POWER (mW)
200
0
400
420 440 460 480 500 520
f, FREQUENCY (MHz)
Figure 7. Output Power versus Input Power Figure 8. Output Power versus Frequency
1500
1300
Pin = 75 mW
50 mW
25 mW
0
6
10 12 14 168
VCC, COLLECTOR VOLTAGE (Vdc)
f = 512 MHz
1100
900
700
out
P , OUTPUT POWER (mW)
600
300
VCC = 12.5 Vdc
400
420 440 460 480 500 520
f, FREQUENCY (MHz)
Pin = 75 mW
50 mW
25 mW
Pin = 75 mW
50 mW
25 mW
VCC = 7.5 Vdc
Figure 9. Output Power versus Collector Voltage Figure 10. Output Power versus Frequency
MRF8372R1, R2MOTOROLA RF DEVICE DATA
5
Page 6
P ACKAGE DIMENSIONS
C
A
B
A1
D
58
0.25MB
E
1
H
4
e
M
h
X 45
_
q
A
SEATING
PLANE
0.10
B
SS
A0.25MCB
C
STYLE 1:
PIN 1. EMITTER
L
2. COLLECTOR
3. COLLECTOR
4. EMITTER
5. EMITTER
6. BASE
7. BASE
8. EMITTER
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
MILLIMETERS
DIM MIN MAX
A 1.35 1.75
A1 0.10 0.25
B 0.35 0.49
C 0.18 0.25
D 4.80 5.00
E
3.80 4.00
1.27 BSCe
H 5.80 6.20
h
0.25 0.50
L 0.40 1.25
0 7
q
__
CASE 751–05
ISSUE S
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488
Mfax: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
INTERNET: http://motorola.com/sps
MRF8372R1, R2
◊
MOTOROLA RF DEVICE DATA
MRF8372/D
6
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