Page 1
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2500 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical Single-Carrier W -CDMA Performance: VDD = 28 Volts, IDQ =
500 mA, P
3.84 MHz. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 22.5%
ACPR @ 5 MHz Offset — - 42.5 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2600 MHz, 50 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
= 7 Watts Avg., f = 2615 MHz, Channel Bandwidth =
out
Operation
DD
Document Number: MRF6S27050H
Rev. 1, 12/2008
MRF6S27050HR3
MRF6S27050HSR3
2500 - 2700 MHz, 7 W AVG., 28 V
SINGLE W- CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF6S27050HR3
CASE 465A-06, STYLE 1
NI-780S
MRF6S27050HSR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
Gate-Source Voltage V
Storage Temperature Range T
Case Operating Temperature T
Operating Junction Temperature
(1,2)
DSS
GS
stg
C
T
J
-0.5, +68 Vdc
-0.5, +12 Vdc
- 65 to +150 °C
150 °C
225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value
Thermal Resistance, Junction to Case
Case Temperature 80°C, 43 W CW
Case Temperature 72°C, 7 W CW
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
R
θ
JC
(2,3)
0.85
0.98
Unit
°C/W
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
1
Page 2
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 1A (Minimum)
Machine Model (per EIA/JESD22 - A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Electrical Characteristics (T
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 µAdc)
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 500 mAdc, Measured in Functional Test)
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, P
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain G
Drain Efficiency η
Adjacent Channel Power Ratio ACPR -40 -42.5 — dBc
Input Return Loss IRL — -10 — dB
1. Part internally matched both on input and output.
(1)
= 25°C unless otherwise noted)
C
I
I
I
V
GS(th)
V
GS(Q)
V
DS(on)
C
C
DSS
DSS
GSS
rss
oss
ps
D
— — 10 µAdc
— — 1 µAdc
— — 1 µAdc
1 2 3 Vdc
2 2.8 4 Vdc
— 0.21 0.3 Vdc
— 0.83 — pF
— 232 — pF
= 7 W Avg. W-CDMA, f = 2615 MHz,
out
15 16 18 dB
20.5 22.5 — %
MRF6S27050HR3 MRF6S27050HSR3
2
RF Device Data
Freescale Semiconductor
Page 3
V
RF
INPUT
B2
BIAS
Z1 Z2 Z3C1Z4 Z5 Z6 Z7
+
C7+C6
C5
C4
R1
B1
C3
V
SUPPLY
+
C2
Z17
+
C15
RF
OUTPUT
+
C9 C14
C8
Z9
Z8
Z10 Z11 Z12 Z14
DUT
C10+C11 C12 C13
Z13 Z16
Z15
Z1 0.748″ x 0.081″ Microstrip
Z2 0.273″ x 0.081″ Microstrip
Z3 0.055″ x 0.220″ Microstrip
Z4 0.090″ x 0.440″ Microstrip
Z5 0.195″ x 0.170″ Microstrip
Z6 0.797″ x 0.490″ Microstrip
Z7 0.082″ x 0.490″ Microstrip
Z8 0.050″ x 0.476″ Microstrip
Z9 0.070″ x 0.350″ Microstrip
Z10 0.091″ x 0.753″ Microstrip
Z11 0.150″ x 0.753″ Microstrip
Z12 0.153″ x 0.543″ Microstrip
Z13 0.145″ x 0.384″ Microstrip
Z14 0.446″ x 0.148″ Microstrip
Z15 0.130″ x 0.425″ Microstrip
Z16 0.384″ x 0.081″ Microstrip
Z17 0.730″ x 0.081″ Microstrip
PCB Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.55
Figure 1. MRF6S27050HR3(SR3) Test Circuit Schematic
Table 5. MRF6S27050HR3(SR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Ferrite Bead 2508051107Y0 Fair-Rite
B2 Ferrite Bead, Short 2743019447 Fair-Rite
C1, C2 4.3 pF Chip Capacitors ATC100B4R3BT500XT ATC
C3, C8 3.6 pF Chip Capacitors ATC100B3R6BT500XT ATC
C4, C11 2.2 µF, 50 V Chip Capacitors C1825C225J5RAC Kemet
C5 0.01 µF, 100 V Chip Capacitor C1825C103J1RAC Kemet
C6 22 µF, 25 V Tantulum Capacitor T491D226K025AT Kemet
C7 47 µF, 16 V Tantalum Capacitor T491D476K016AT Kemet
C9, C10 10 µF, 50 V Tantalum Capacitors T491D106K050AT Kemet
C12, C13 1.0 µF, 50 V Chip Capacitors GRM32RR71H105KA01B Murata
C14 330 µF, 63 V Electrolytic Capacitor EMVY630GTR331MMH0S Nippon Chemi-Con
C15 47 µF, 50 V Electrolytic Capacitor EMVK500ADA470MHA0G United Chemi-Con
R1 2.7 Ω, 1/4 W Chip Resistor CRCW12062R7FKEA Vishay
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
3
Page 4
C11
B2
C7 C6
C1
B1
R1
C4 Top
C5 Bottom
C3
C8
C10C9
CUT OUT AREA
Figure 2. MRF6S27050HR3(SR3) Test Circuit Component Layout
C14
C13
C12
C2
MRF6S27050
Rev. 1A
C15
MRF6S27050HR3 MRF6S27050HSR3
4
RF Device Data
Freescale Semiconductor
Page 5
TYPICAL CHARACTERISTICS
19
η
18
D
17
G
ps
16
15
V
= 28 Vdc, P
DD
= 7 W (Avg.), IDQ = 500 mA
out
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
24
23
22
21
20
IRL
14
, POWER GAIN (dB)
ps
ACPR
13
G
12
−40
−50
−60
ALT1
11
2640262026002580256025402520
26802660
−70
27002500
f, FREQUENCY (MHz)
Figure 3. Single- Carrier W - CDMA Broadband Performance
@ P
= 7 Watts Avg.
out
19
η
D
18
17
G
ps
16
15
IRL
14
, POWER GAIN (dB)
ps
ACPR
13
G
12
11
ALT1
V
= 28 Vdc, P
DD
IDQ = 500 mA, Single−Carrier W−CDMA
= 14 W (Avg.)
out
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
2640262026002580256025402520
26802660
34
33
32
31
30
−30
−40
−50
−60
27002500
f, FREQUENCY (MHz)
Figure 4. Single- Carrier W - CDMA Broadband Performance
@ P
= 14 Watts Avg.
out
, DRAIN
D
η
EFFICIENCY (%)
−5
−10
−15
−20
ACPR (dBc), ALT1 (dBc)
−25
, DRAIN
D
η
EFFICIENCY (%)
−5
−10
−15
−20
ACPR (dBc), ALT1 (dBc)
−25
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
20
IDQ = 1000 mA
19
18
750 mA
17
500 mA
16
15
, POWER GAIN (dB)
ps
G
14
250 mA
125 mA
13
12
1
P
, OUTPUT POWER (WATTS) PEP
out
Figure 5. Two- Tone Power Gain versus
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc
f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements
10 100
Output Power
−15
VDD = 28 Vdc, f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements
−20
−25
−30
−35
250 mA
−40
IMD, THIRD ORDER
−45
−50
INTERMODULATION DISTORTION (dBc)
−55
0.5
Figure 6. Third Order Intermodulation Distortion
IDQ = 125 mA
750 mA
500 mA
10
1
1000 mA
P
, OUTPUT POWER (WATTS) PEP
out
versus Output Power
MRF6S27050HR3 MRF6S27050HSR3
100
5
Page 6
TYPICAL CHARACTERISTICS
−10
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2598.75 MHz, f2 = 2601.25 MHz
−20
Two−Tone Measurements, 2.5 MHz Tone Spacing
−30
−40
3rd Order
−50
−60
5th Order
7th Order
IMD, INTERMODULATION DISTORTION (dBc)
−70
1 100
P
, OUTPUT POWER (WATTS) PEP
out
10
Figure 7. Intermodulation Distortion Products
versus Output Power
54
53
52
51
50
P1dB = 46.91 dBm (49.06 W)
49
48
47
, OUTPUT POWER (dBm)
out
46
P
45
44
28
Figure 9. Pulsed CW Output Power versus
−5
VDD = 28 Vdc, P
−10
Two−Tone Measurements
−15
(f1 + f2)/2 = Center Frequency of 2600 MHz
−20
−25
−30
−35
−40
−45
−50
IMD, INTERMODULATION DISTORTION (dBc)
−55
0.1
Figure 8. Intermodulation Distortion Products
P6dB = 47.88 dBm (61.38 W)
P3dB = 47.44 dBm (55.46 W)
VDD = 28 Vdc, IDQ = 500 mA
Pulsed CW, 12 µsec(on), 1% Duty Cycle
f = 2600 MHz
29 3130 3332 3634
Pin, INPUT POWER (dBm)
Input Power
= 50 W (PEP), IDQ = 500 mA
out
IM3−U
IM3−L
IM5−L
IM5−U
1 100
TWO−TONE SPACING (MHz)
versus Tone Spacing
Ideal
Actual
3527
37
IM7−L
IM7−U
10
, POWER GAIN (dBc)
ps
, DRAIN EFFICIENCY (%), G
D
η
Figure 10. Single- Carrier W - CDMA ACPR, ALT1, Power
MRF6S27050HR3 MRF6S27050HSR3
6
50
V
= 28 Vdc, IDQ = 500 mA, f = 2600 MHz
DD
45
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
40
35
ACPR
30
25
20
G
ps
15
10
5
η
D
ALT1
0 −65
0.2 10 40
P
1
, OUTPUT POWER (WATTS) AVG. W−CDMA
out
Gain and Drain Efficiency versus Output Power
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
ACPR (dBc), ALT1 (dBc)
RF Device Data
Freescale Semiconductor
Page 7
TYPICAL CHARACTERISTICS
20
19
G
ps
TC = −30_C
18
25_C
17
16
15
, POWER GAIN (dB)
ps
G
14
85_C
VDD = 28 Vdc
13
η
D
12
IDQ = 500 mA
f = 2600 MHz
0.1
P
, OUTPUT POWER (WATTS) CW
out
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
35
30
25
V
= 28 Vdc, IDQ = 500 mA
DD
WiMAX, 802.16, 64 QAM 3/4, 4 Bursts
7 MHz Channel Bandwidth, f = 2600 MHz
17
IDQ = 500 mA
f = 2600 MHz
16
−30_C
25_C
85_C
64
56
48
40
32
24
, DRAIN EFFICIENCY (%)
16
D
η
8
0
101
100
15
, POWER GAIN (dB)
ps
G
14
0.3 20
VDD = 24 V
40 60
P
, OUTPUT POWER (WATTS) CW
out
28 V
32 V
503010
70
Figure 12. Power Gain versus Output Power
6
5
4
9
10
8
10
20
η
, DRAIN EFFICIENCY (%)
D
15
η
D
EVM
10
34 41 42
35 36 37 38 39 40
P
, OUTPUT POWER (dBm)
out
Figure 13. Drain Efficiency and Error Vector
Magnitude versus Output Power
3
MTTF (HOURS)
7
10
2
EVM, ERROR VECTOR MAGNITUDE (%)
1
6
10
90
110 130 150 170 190
210 230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, P
= 7 W Avg., and ηD = 22.5%.
out
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 14. MTTF Factor versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
7
Page 8
W- CDMA TEST SIGNAL
100
10
1
0.1
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset
0.01
PROBABILITY (%)
0.0001
PAR = 8.5 dB @ 0.01% Probability on CCDF
0.001
0
24 68
PEAK−TO−AVERAGE (dB)
Figure 15. CCDF W- CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single- Carrier Test Signal
−10
−20
−30
−40
−50
−60
(dB)
−70
−80
−90
10
−100
−110
−ACPR in 3.84 MHz
Integrated BW
−7.2
3.84 MHz
Channel BW
−ACPR in 3.84 MHz
Integrated BW
7.21.8 5.43.60−1.8−3.6−5.4−9 9
f, FREQUENCY (MHz)
Figure 16. Single- Carrier W - CDMA Spectrum
MRF6S27050HR3 MRF6S27050HSR3
8
RF Device Data
Freescale Semiconductor
Page 9
Z
source
f = 2500 MHz
f = 2700 MHz
Zo = 25 Ω
Z
load
f = 2500 MHz
f = 2700 MHz
VDD = 28 Vdc, IDQ = 500 mA, P
f
MHz
Z
source
W
= 7 W Avg.
out
Z
load
W
2500 6.897 + j6.212 11.524 - j6.193
2525 7.062 + j6.412 11.325 - j6.396
2550 7.239 + j6.611 11.110 - j6.594
2575 7.428 + j6.808 10.880 - j6.783
2600 7.630 + j7.002 10.634 - j6.962
2625 7.846 + j7.193 10.373 - j7.130
2650 8.075 + j7.380 10.098 - j7.283
2675 8.320 + j7.561 9.810 - j7.420
2700 8.579 + j7.737 9.511 - j7.541
Z
Z
= Test circuit impedance as measured from
source
load
gate to ground.
= Test circuit impedance as measured
from drain to ground.
RF Device Data
Freescale Semiconductor
Input
Matching
Network
Z
source
Device
Under
Test
Z
load
Output
Matching
Network
Figure 17. Series Equivalent Source and Load Impedance
MRF6S27050HR3 MRF6S27050HSR3
9
Page 10
PACKAGE DIMENSIONS
B
B
(FLANGE)
G
1
2
D
M
bbb B
M
A
T
M
M
N
H
E
AA
(FLANGE)
Q2X
bbb B
3
K
(INSULATOR)
M
bbb B
(LID)
ccc B
A
T
M
A
T
C
SEATING
T
PLANE
M
M
M
M
A
T
M
M
M
ccc B
aaa B
CASE 465- 06
ISSUE G
NI- 780
MRF6S27050HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
A 1.335 1.345 33.91 34.16
B 0.380 0.390 9.65 9.91
(LID)
R
M
M
M
(INSULATOR)
S
M
M
M
A
T
A
T
F
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
G 1.100 BSC 27.94 BSC
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
M 0.774 0.786 19.66 19.96
N 0.772 0.788 19.60 20.00
Q .118 .138 3.00 3.51
R 0.365 0.375 9.27 9.53
S 0.365 0.375 9.27 9.52
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERSINCHES
U
4X
(FLANGE)
B
B
(FLANGE)
H
A
bbb B
E
(FLANGE)
Z
4X
1
2
D
M
M
A
T
3
A
(LID)
K
2X
M
(LID)
N
M
ccc B
(INSULATOR)
M
M
bbb B
C
SEATING
T
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
A 0.805 0.815 20.45 20.70
B 0.380 0.390 9.65 9.91
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
(LID)
M
A
T
A
T
M
M
M
M
ccc B
M
aaa B
R
M
(INSULATOR)
S
M
M
M
A
T
A
T
F
CASE 465A- 06
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
M 0.774 0.786 19.61 20.02
N 0.772 0.788 19.61 20.02
R 0.365 0.375 9.27 9.53
S 0.365 0.375 9.27 9.52
U −−− 0.040 −−− 1.02
Z −−− 0.030 −−− 0.76
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERSINCHES
ISSUE H
NI- 780S
MRF6S27050HSR3
MRF6S27050HR3 MRF6S27050HSR3
10
RF Device Data
Freescale Semiconductor
Page 11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 Nov. 2006
1 Dec. 2008 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
• Initial Release of Data Sheet
number, PCN13232, p. 1, 2
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for V
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
• Replaced Fig. 14, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
, On Characteristics table, p. 2
GS(Q)
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
11
Page 12
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1-800-521-6274 or +1 - 480 - 768 - 2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8-1, Shimo - Meguro, Meguro-ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1-800-441-2447 or +1 - 303 - 675 - 2140
Fax: +1-303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2006, 2008. All rights reserved.
MRF6S27050HR3 MRF6S27050HSR3
Document Number: MRF6S27050H
Rev. 1, 12/2008
12
RF Device Data
Freescale Semiconductor
Loading...