Datasheet MRF653 Datasheet (Motorola)

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SEMICONDUCTOR TECHNICAL DATA
The RF Line
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by MRF653/D
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Designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W Gain = 8.0 dB (Typ) Efficiency = 65% (Typ)
Gold Metallized, Emitter Ballasted for Long Life and Reliability
Capable of 20:1 VSWR Load Mismatch at 16 V Supply Voltage
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V Collector–Base Voltage V Emitter–Base Voltage V Collector Current — Continuous I Total Device Dissipation @ TA = 25°C
Derate above 25°C Storage Temperature Range T Operating Junction Temperature T
CEO CBO EBO
C
P
D
stg
J
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
C
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage (IC = 20 mAdc, IB = 0) V Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) V Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V Collector Cutoff Current (VCE = 15 Vdc, VBE = 0) I
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) h
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) C
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, P Collector Efficiency
(VCC = 12.5 Vdc, P Load Mismatch Stress
(VCC = 16 Vdc, f = 512 MHz, Pin (1) = 2.6 W,
VSWR = 20:1, All Phase Angles)
NOTE:
1. Pin = 2.0 dB over the typical input power required for 10 W output power @ 12.5 Vdc.
REV 8
= 10 W, f = 512 MHz)
out
= 10 W, f = 512 MHz)
out
16.5 Vdc 38 Vdc
4.0 Vdc
2.75 Adc 44
0.25
–65 to +150 °C
200 °C
Watts
W/°C
Symbol Min Typ Max Unit
(BR)CEO (BR)CES (BR)EBO
CES
FE
ob
G
pe
η
c
ψ
θJC

10 W, 512 MHz
RF POWER TRANSISTOR NPN SILICON
CASE 244–04, STYLE 1
4.0 °C/W
16.5 Vdc 38 Vdc
4.0 Vdc — 5.0 mAdc
20 120
22 28 pF
7.0 8.0 dB
55 65 %
No Degradation in Output Power
Motorola, Inc. 1997
MRF653MOTOROLA RF DEVICE DATA
1
JP1
L1 L4
+
C7 C8 C9
L2 L3
SOCKET
C3
D.U.T.
C10
BB
C11 C12
+
+
V
CC
C2
C1
C1, C5 — 1.0–20 pF, Johanson C2, C6 — 330 pF, 100 Mil ATC C3, C4 — 36 pF, Mini–Unelco C7, C12 — 10 µF, 35 V, Tantalum C8, C11 — 0.1 µF, Ceramic C9, C10 — 91 pF, Mini–Unelco
Z2Z1 Z4 Z5
C4
L1, L4 — 4–1/2 Turns, #18 AWG, 0.16 ID L2, L3 — 2 Turns, #18 AWG, 0.16 ID B — Ferrite Bead, Ferroxcube 56–590–65–3B Z1 — 51 x 630 mils Z2 — 162 x 1300 mils Z3 — 210 x 1350 mils Z4 — 210 x 280 mils Z5 — 51 x 300 mils Board Material — 0.032 epoxy glass G10, 1 oz., copper clad,
Board Material — double sided, εr = 5
JP1 — Jumper, #14 AWG w/Banana Plugs
Z3
C6
C5
Figure 1. Broadband T est Circuit Schematic
MRF653 2
MOTOROLA RF DEVICE DATA
16 14
12 10
440 MHz
470
512
16
14 12 10
Pin = 2.4 W
1.6 W
8 6 4
out
P , OUTPUT POWER (WATTS)
2
0
0 0.5 2 3
1 1.5 2.5 3.5
Pin, INPUT POWER (WATTS)
VCC = 12.5 Vdc
8 6 4
out
P , OUTPUT POWER (WATTS)
2
0
430 440 470 490
VCC = 12.5 Vdc
450 460 480 500 510 520 530
f, FREQUENCY (MHz)
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency
16 14
12 10
8 6 4
out
P , OUTPUT POWER (WATTS)
2
0
6 8 10 12 14 16
fo = 512 MHz
7 9 11 13 15
VCC, SUPPLY VOLTAGE (VOLTS)
Pin = 2.4 W
1.6 W
0.8 W
10
G
8
6
4
, POWER GAIN (dB)
pe
G
2
0
440 460 480 520
450 470 510490
pe
η
c
VSWR
f, FREQUENCY (MHz)
0.8 W
P
= 10 W
out
VCC = 12.5 Vdc
500
70% 60% 50% 40%
1.3:1
1.2:1
1.1:1
, COLLECTOR EFFICIENCY
c
η
VSWR
Figure 4. Output Power versus Supply V oltage Figure 5. Typical Broadband Circuit Performance
MRF653MOTOROLA RF DEVICE DATA
3
f = 520 MHz 500
470
440
f = 520 MHz
Z
in
ZOL*
500
470
440
P
= 10 W, VCC = 12.5 Vdc
out
f (MHz) Z
440 1.0 + j2.2 4.3 – j2.8 470 1.0 + j2.4 4.4 – j2.1 500 1.0 + j2.6 4.1 – j1.7
520 1.0 + j2.7 3.9 – j1.65
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency.
in
Zo = 10
ZOL*
MRF653 4
Figure 6. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
P ACKAGE DIMENSIONS
2
T
F
P
8–32 NC 2A
WRENCH FLAT
4
A
13
K
M
SEATING PLANE
U
E B
D
J
S
CASE 244–04
ISSUE J
DIM MIN MAX MIN MAX
A 7.06 7.26 0.278 0.286 B 6.20 6.50 0.244 0.256 C 14.99 16.51 0.590 0.650 D 5.46 5.96 0.215 0.235 E 1.40 1.65 0.055 0.065 G 1.52 ––– 0.060 ––– J 0.08 0.17 0.003 0.007 K 11.05 ––– 0.435 ––– M 45 NOM 45 NOM
__
C
P ––– 1.27 ––– 0.050 S 3.00 3.25 0.118 0.128 T 1.40 1.77 0.055 0.070 U 2.92 3.68 0.115 0.145
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
INCHESMILLIMETERS
MRF653MOTOROLA RF DEVICE DATA
5
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MRF653 6
MOTOROLA RF DEVICE DATA
MRF653/D
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