Datasheet MRF5S19150HR3, MRF5S19150HSR3 Datasheet (Freescale)

查询MRF5S19100H供应商

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications at frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.

• Typical 2- Carrier N-CDMA Performance for V

1400 mA, Avg., P
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =

= 32 Watts Avg., Full Frequency Band, IS- 95 CDMA

out

1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 26%
IM3 @ 2.5 MHz Offset — -36.5 dBc @ 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — -50 dB @ 30 kHz Bandwidth

• Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,

100 Watts CW Output Power

• Characterized with Series Equivalent Large- Signal Impedance Parameters

• Internally Matched, Controlled Q, for Ease of Use

• Qualified Up to a Maximum of 32 V Operation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

= 28 Volts, IDQ =

DD

µ″ Nominal.

MRF5S19150H

Rev. 1, 12/2004

MRF5S19150HR3

MRF5S19150HSR3

1990 MHz, 32 W AVG., 28 V

2 x N- CDMA

LATERAL N- CHANNEL

RF POWER MOSFETs

CASE 465B-03, STYLE 1

NI-880

MRF5S19150HR3

CASE 465C-02, STYLE 1

NI-880S

MRF5S19150HSR3

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate-Source Voltage V

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

Operating Junction Temperature T

CW Operation CW 100 W

DSS

GS

P

stg

D

J

-0.5, +65 Vdc

-0.5, +15 Vdc

427

2.44

- 65 to +150 °C

200 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 32 W CW

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.

2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.

NOTE - CAUTION
packaging MOS devices should be observed.

- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

R

θ

JC

(1,2)

0.41

0.44

W

W/°C

Unit

°C/W

 Freescale Semiconductor, Inc., 2004. All rights reserved.

RF Device Data
Freescale Semiconductor

MRF5S19150HR3 MRF5S19150HSR3

1

Table 3. ESD Protection Characteristics

Test Conditions Class

Human Body Model 1 (Minimum)

Machine Model M3 (Minimum)

Charge Device Model C7 (Minimum)

Table 4. Electrical Characteristics (T

Characteristic

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(V

= 65 Vdc, VGS = 0 Vdc)

DS

Zero Gate Voltage Drain Leakage Current

(V

= 28 Vdc, VGS = 0 Vdc)

DS

Gate-Source Leakage Current

(V

= 5 Vdc, VDS = 0 Vdc)

GS

On Characteristics

Gate Threshold Voltage

(V

= 10 Vdc, ID = 360 µAdc)

DS

Gate Quiescent Voltage

(V

= 28 Vdc, ID = 1400 mAdc)

DS

Drain-Source On-Voltage

(V

= 10 Vdc, ID = 3.6 Adc)

GS

Forward Transconductance

(V

= 10 Vdc, ID = 3.6 Adc)

DS

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 28 Vdc, VGS = 0, f = 1 MHz)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, P
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2-Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. Peak/Avg = 9.8 dB @

0.01% Probability on CCDF.

Power Gain

Drain Efficiency η

Intermodulation Distortion IM3 — -36.5 -35 dBc

Adjacent Channel Power Ratio ACPR — -50 -48 dBc

Input Return Loss IRL — -17 -9 dB

1. Part is internally matched both on input and output.

(1)

= 25°C unless otherwise noted)

C

Symbol Min Typ Max Unit

I

DSS

I

DSS

I

GSS

V

GS(th)

V

GS(Q)

V

DS(on)

C

G

g

fs

rss

ps

D

— — 10 µAdc

— — 1 µAdc

— — 1 µAdc

2.5 2.8 3.5 Vdc

— 3.8 — Vdc

— 0.24 — Vdc

— 9 — S

— 3.1 — pF

= 32 W Avg., f1 = 1930 MHz,

out

13 14 — dB

24 26 — %

MRF5S19150HR3 MRF5S19150HSR3

2

RF Device Data

Freescale Semiconductor

V

BIAS

+

C9

R1

R2

+

C8

C7 C6

B1

R3

C5

C17 C18 C19 C20

C14

++

V

SUPPLY

+

++

C23C16C15

C22C21

RF

INPUT

Z1 Z2 Z4 Z5 Z6

C1

Z1 1.023″ x 0.082″ Microstrip
Z2 0.398″ x 0.082″ Microstrip
Z3 0.203″ x 0.082″ Microstrip
Z4 0.074″ x 0.082″ Microstrip
Z5 0.630″ x 0.084″ Microstrip
Z6 0.557″ x 1.030″ x 0.237″ Microstrip Taper
Z7 0.103″ x 1.030″ Microstrip
Z8 1.280″ x 0.046″ Microstrip

C2

Z3

C3

+

C10

Z11

DUT

C4

C11 C12

B2

R4

Z8

Z7

Z9

C13

Z13 Z14

Z10 Z15

Z12

C26 C27 C32 C33

C25

Z9 1.280″ x 0.046″ Microstrip
Z10 0.090″ x 1.055″ Microstrip
Z11 1.125″ x 0.068″ Microstrip
Z12 1.125″ x 0.068″ Microstrip
Z13 0.505″ x 1.055″ Microstrip
Z14 0.898″ x 0.105″ Microstrip
Z15 1.133″ x 0.082″ Microstrip
PCB Arlon GX0300-55-22, 0.03″, ε

C24

C29C28 C31C30

Figure 1. MRF5S19150HR3(SR3) Test Circuit Schematic

RF

OUTPUT

++

++

= 2.55

r

Table 5. MRF5S19150HR3(SR3) Test Circuit Component Designations and Values

Part Description

B1, B2 Short RF Beads

C1, C2 0.6 – 4.5 Variable Capacitors, Gigatrim

C3 0.8 pF Chip Capacitor

C4, C5, C13, C14, C24, C25 9.1 pF Chip Capacitors

C8, C10 1.0 µF, 50 V SMT Tantalum Capacitors

C6, C12, C16, C17, C18, C27, C28, C29 0.1 µF Chip Capacitors

C7, C11, C15, C26 1000 pF Chip Capacitors

C9 100 µF, 50 V Electrolytic Capacitor

C23 470 µF, 63 V Electrolytic Capacitor

C19, C20, C21, C22, C30, C31, C32, C33 22 µF, 35 V Tantalum Capacitors

R1

R2

R3, R4

1 kW Chip Resistor

560 kW Chip Resistor

12 W Chip Resistors

RF Device Data
Freescale Semiconductor

MRF5S19150HR3 MRF5S19150HSR3

3

C17 C18

C9

B1

R3

C5

R2

R1

C8

C7

C6

V

GG

C14

C15

C19 C20

C16

C23

C21 C22

V

DD

C4

C2

C10

B2

C3

C11

R4

C12

C13

CUT OUT AREA

C26

C27

C25

C28 C29

C1

MRF5S19150
Rev 4

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.

C24

C32 C33

C30 C31

Figure 2. MRF5S19150HR3(SR3) Test Circuit Component Layout

MRF5S19150HR3 MRF5S19150HSR3

4

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

16

IDQ = 2100 mA

15

14

13

, POWER GAIN (dB)

ps

G

12

11

1700 mA

1400 mA

1050 mA

700 mA

1

Figure 4. Two - Tone Power Gain versus

15

14 35

G

ps

η

13 30

D

12 25

11 2 0

10 −30

IRL

9 −35

, POWER GAIN (dB)

IM3

ps

8 −40

G

7 −45

ACPR

6 −50

5
1900

VDD = 28 Vdc, P
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing

1.228 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)

1920 1940 1960 1980 2000

Figure 3. 2- Carrier N - CDMA Broadband Performance

VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing

10

P

, OUTPUT POWER (WATTS) PEP

out

Output Power

= 32 W (Avg.), IDQ = 1400 mA

out

f, FREQUENCY (MHz)

100

−15
VDD = 28 Vdc

−20

f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing

−25

−30

−35

−40

IMD, THIRD ORDER

INTERMODULATION DISTORTION (dBc)

700 mA

−45

−50

−55

1

Figure 5. Third Order Intermodulation versus

40

, DRAIN

D

η

EFFICIENCY (%)

−10

−20

−30

−40

−50

IM3 (dBc), ACPR (dBc)

−55

2020

P

−60

1700 mA

1050 mA

10

, OUTPUT POWER (WATTS) PEP

out

Output Power

INPUT RETURN LOSS (dB)IRL,

IDQ = 2100 mA

1400 mA

100

−20

−25

−30

3rd Order

−35

−40
5th Order

−45
7th Order

−50

INTERMODULATION DISTORTION (dBc)IMD,

−55

−60

VDD = 28 Vdc, P
Two−Tone Measurements, Center Frequency = 1960 MHz

0.1

= 150 W (PEP), IDQ = 1400 mA

out

1

TWO−TONE SPACING (MHz)

Figure 6. Intermodulation Distortion Products

versus Tone Spacing

RF Device Data
Freescale Semiconductor

59

58

57

56

55

P1dB = 53.01 dBm (199.99 W)

54

53

, OUTPUT POWER (dBm)

52

out

P

51

50

49

10

35

P3dB = 53.71 dBm (234.96 W)

VDD = 28 Vdc, IDQ = 1400 mA
Pulsed CW, 8 µsec (on), 1 msec (off)
Center Frequency = 1960 MHz

, INPUT POWER (dBm)

P

in

45

444342414039383736

Figure 7. Pulse CW Output Power versus

Input Power

MRF5S19150HR3 MRF5S19150HSR3

5

TYPICAL CHARACTERISTICS

−10

−20

−30

−40

45

VDD = 28 Vdc, IDQ = 1400 mA

40 −30

f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth

35 −35

Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)

IM3

η

−25

D

30 −40

, POWER GAIN (dB)

25 −45

ps

20 −50

15 −55

10 −60

ACPR

G

ps

IM3 (dBc), ACPR (dBc)

5 −65

0

, DRAIN EFFICIENCY (%), G

D

η

1

, OUTPUT POWER (WATTS) AVG., N−CDMA

P

out

10

−70

Figure 8. 2- Carrier N - CDMA ACPR, IM3, Power

Gain, Drain Efficiency versus Output Power

0

1.2288 MHz
Channel BW

−IM3 @

1.2288 MHz

Integrated BW

+IM3 @

1.2288 MHz

Integrated BW

9

10

)

2

8

10

−50

(dB)

−60

−70

−80

−90

−100

−ACPR @ 30 kHz
Integrated BW

+ACPR @ 30 kHz

Integrated BW

f, FREQUENCY (MHz)

Figure 9. 2- Carrier N - CDMA Spectrum

61.5 4.530−1.5−3−4.5−6−7.5 7.5

7

10

MTTF FACTOR (HOURS X AMPS

6

10

100

120 140 160 180 200

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours x ampere

2

drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I

2

for MTTF in a particular application.

D

Figure 10. MTTF Factor versus Junction Temperature

220

MRF5S19150HR3 MRF5S19150HSR3

6

RF Device Data

Freescale Semiconductor

f = 1990 MHz

f = 1930 MHz

Z

load

f = 1930 MHz

f = 1990 MHz

MHz

Z

source

V

= 28 V, IDQ = 1400 mA, P

DD

f

Z

source

Ω

Zo = 10 Ω

= 32 W Avg.

out

Z

load

Ω

1930

1960

1990

Z

source

Z

load

Input
Matching
Network

= Test circuit impedance as measured from

= Test circuit impedance as measured

1.89 - j5.24

1.64 - j5.29

1.3 - j5.49

gate to ground.

from drain to ground.

Device
Under Test

Z

source

1.06 - j1.58

0.88 - j1.37

0.90 - j1.21

Z

load

Output
Matching
Network

Figure 11. Series Equivalent Source and Load Impedance

RF Device Data
Freescale Semiconductor

MRF5S19150HR3 MRF5S19150HSR3

7

NOTES

MRF5S19150HR3 MRF5S19150HSR3

8

RF Device Data

Freescale Semiconductor

NOTES

RF Device Data
Freescale Semiconductor

MRF5S19150HR3 MRF5S19150HSR3

9

NOTES

MRF5S19150HR3 MRF5S19150HSR3

10

RF Device Data

Freescale Semiconductor

PACKAGE DIMENSIONS

B

B

(FLANGE)

K

G

1

2

D

M

bbb B

M

bbb B

M

ccc B

M

A

T

M

A

T

M

A

T

H

E

AA

(FLANGE)

3

M

(INSULATOR)

M

M

(LID)

N

M

Q

2X

M

bbb B

M

A

T

ccc B

aaa B

M

M

A

T

M

A

T

R

M

S

M

(LID)

M

(INSULATOR)

M

C

F

SEATING

T

PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.

4. DELETED

DIM MIN MAX MIN MAX

A 1.335 1.345 33.91 34.16
B 0.535 0.545 13.6 13.8
C 0.147 0.200 3.73 5.08
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
G 1.100 BSC 27.94 BSC
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33

M 0.872 0.888 22.15 22.55

N 0.871 0.889 19.30 22.60
Q .118 .138 3.00 3.51
R 0.515 0.525 13.10 13.30

S 0.515 0.525 13.10 13.30
aaa 0.007 REF 0.178 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

MILLIMETERSINCHES

CASE 465B- 03

ISSUE B

NI- 880

MRF5S19150HR3

B

B

(FLANGE)

K

M

bbb B

M

bbb B

T

M

ccc B

T

H

E

AA

(FLANGE)

1

2

D

M

A

T

M

A

M

A

M

(INSULATOR)

M

M

(LID)

N

M

R

M

ccc B

M

A

T

S

M

aaa B

M

A

T

(LID)

M

(INSULATOR)

M

C

F

SEATING

T

PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.

DIM MIN MAX MIN MAX

A 0.905 0.915 22.99 23.24
B 0.535 0.545 13.60 13.80
C 0.147 0.200 3.73 5.08
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
M 0.872 0.888 22.15 22.55
N 0.871 0.889 19.30 22.60
R 0.515 0.525 13.10 13.30

S 0.515 0.525 13.10 13.30
aaa 0.007 REF 0.178 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

MILLIMETERSINCHES

CASE 465C- 02

ISSUE A
NI- 880S

MRF5S19150HSR3

RF Device Data
Freescale Semiconductor

MRF5S19150HR3 MRF5S19150HSR3

11

How to Reach Us:

Home Page:

www.freescale.com

E-mail:

[e-mail]

USA/Europe or Locations Not Listed:

Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
[phone] or +1 - 480 - 768 - 2130
[e-mail]

Europe, Middle East, and Africa:

Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
[phone] (English)
[phone] (English)
[phone] (German)
[phone] (French)
[e-mail]

Japan:

Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8- 1, Shimo - Meguro, Meguro - ku,
Tokyo 153- 0064
Japan
0120 191014 or [phone]
[e-mail]

Asia/Pacific:

Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
[phone]
[e-mail]

For Literature Requests Only:

Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1-800-441- 2447 or 303 - 675 - 2140
Fax: [phone]
[e-mail]

Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.

Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.

Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
 Freescale Semiconductor, Inc. 2004. All rights reserved.

MRF5S19150HR3 MRF5S19150HSR3

Document Number:
Rev. 1, 12/2004

MRF5S19150H

12

RF Device Data

Freescale Semiconductor