1
MRF557MOTOROLA RF DEVICE DATA
The RF Line
Designed primarily for wideband l arge s ignal predriver stages in the
800 MHz frequency range.
• Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 8.0 dB
Efficiency 60% (Typ)
• Cost Effective PowerMacro Package
• Electroless Tin Plated Leads for Improved Solderability
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
16 Vdc
Collector–Base Voltage V
CBO
36 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
400 mAdc
Total Device Dissipation @ TC = 75°C (1, 2)
Derate above 75°C
P
D
3.0
40
Watts
mW/°C
Storage Temperature Range T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
25 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V
(BR)CEO
16 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
V
(BR)CES
36 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
I
CES
— — 0.1 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
h
FE
50 90 200 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 3.5 5.0 pF
NOTES: (continued)
1. TC, Case temperature measured on collector lead immediately adjacent to body of package.
2. The MRF557 PowerMacro must be properly mounted for reliable operation. AN938, “Mounting Techniques in PowerMacro Transistor,”
discusses methods of mounting and heatsinking.
Order this document
by MRF557/D
SEMICONDUCTOR TECHNICAL DATA
1.5 W, 870 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
CASE 317D–02, STYLE 2
Motorola, Inc. 1995
REV 7
MRF557
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain Figures 1, 2
(VCC = 12.5 Vdc, P
out
= 1.5 W, f = 870 MHz)
G
pe
8.0 9.0 — dB
Collector Efficiency Figures 1, 2
(VCC = 12.5 Vdc, P
out
= 1.5 W, f = 870 MHz)
η
c
55 60 — %
Load Mismatch Stress Figures 1, 2
(VCC = 15.5 Vdc, Pin = 225 mW, f = 870 MHz,
VSWR ≥ 10:1 all phase angles)
ψ
No Degradation in Output Power
Figure 1. 800–880 MHz Broadband Circuit
C1, C2, C5, C7 — 0.8–8.0 pF Johanson Gigatrim*
C3, C4 — 15 pF Clamped Mica, Mini–Underwood
C6 — 27 pF Clamped Mica, Mini–Underwood
C8 — 91 pF Clamped Mica, Mini–Underwood
C9 — 68 pF Clamped Mica, Mini–Underwood
C10 — 1.0 µF, 25 V Tantalum
B — Bead, Ferroxcube 56–590–65/3B
PCB — 1/16″ Glass Teflon, εr = 2.56
*Fixed tuned for broadband response.
L1, L4 — 5 Turns #21 AWG, 5/32″ ID
L2, L3 — 60 x 125 x 250 Mils Copper Tab on
L2, L3 — 27 Mil Thick Alumina Substrate
L5 — 7 Turns #21 AWG, 5/32″ ID
Z1 — 1.65 x 0.163″ Microstrip, Zo = 50 Ω
Z2 — 0.85 x 0.163″ Microstrip, Zo = 50 Ω
Z3 — 0.625 x 0.163″ Microstrip, Zo = 50 Ω
Z4 — 1.35 x 0.163″ Microstrip, Zo = 50 Ω
B
B
RF
POWER
INPUT
RF
POWER
OUTPUT
D.U.T.
Z1
+
Z2
Z3 Z4
C10
+
–
C9
L5
C8
L4
L3
L2
L1
C1 C2
C3
C4
C5 C7
C6
V
CC
3
MRF557MOTOROLA RF DEVICE DATA
Figure 2. Performance in Broadband Circuit
G
pe
η
c
IRL
G
pe
, POWER GAIN (dB)
c
η
, COLLECTOR EFFICIENCY (%)
16
14
12
10
8
6
4
2
900
80
70
60
50
40
30
20
10
0
f, FREQUENCY (MHz)
10
15
20
5
IRL, INPUT RETURN LOSS (dB)
880860840820800
0
Z
in
Ohms
ZOL*
Ohms
VCC = 7.5 V VCC = 12.5 V VCC = 7.5 V VCC = 12.5 V
f
Frequency
MHz
Pin = 300 mW Pin = 200 mW
P
out
806 MHz = 1.7 W
P
out
870 MHz = 1.4 W
P
out
960 MHz = 1.0 W
P
out
806 MHz = 2.1 W
P
out
870 MHz = 1.8 W
P
out
960 MHz = 1.1 W
806 2.4 + j3.9 2.4 + j3.1 14.7 – j4.4 13.6 – j12.8
870 2.5 + j4.6 2.7 + j3.7 17.2 – j8.6 16 – j13.2
960 6.1 + j7.4 6.8 + j8.3 40 – j8.3 38 – j10.5
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Table 1. Zin and ZOL versus Collector Voltage, Input Power and Output Power
MRF557
4
MOTOROLA RF DEVICE DATA
800
Figure 3. Power Output versus Power Input Figure 4. Power Output versus Frequency
Figure 5. Power Output versus Frequency Figure 6. Power Output versus Supply Voltage
Figure 7. Power Output versus Supply Voltage Figure 8. Power Output versus Supply Voltage
P , POWER OUTPUT (WATTS)
out
2.5
2
1.5
1
0.5
1000
Pin, POWER INPUT (mW)
VCC = 12.5 Vdc
P , POWER OUTPUT (WATTS)
out
2.5
2
1.5
1
0.5
800
f, FREQUENCY (MHz)
P , POWER OUTPUT (WATTS)
out
0 0
f, FREQUENCY (MHz)
86
VCC, SUPPLY VOLTAGE (VOLTS)
10 12 14 16
P , POWER OUTPUT (WATTS)
out
4
3
2
1
0
86
VCC, SUPPLY VOLTAGE (VOLTS)
10 12 14 16
P , POWER OUTPUT (WATTS)
out
4
3
2
1
0
f = 870 MHz
86
VCC, SUPPLY VOLTAGE (VOLTS)
10 12 14 16
P , POWER OUTPUT (WATTS)
out
4
3
2
1
0
200 300 400
7.5 Vdc
f = 870 MHz
820 840 860 880 900 920 940 960
Pin = 300 mW
200 mW
100 mW
VCC = 7.5 Vdc
2.5
2
1.5
1
0.5
0
820 840 860 880 900 920 940 960
200 mW
100 mW
Pin = 300 mW
VCC = 12.5 Vdc
f = 806 MHz
200 mW
100 mW
Pin = 300 mW
200 mW
100 mW
Pin = 300 mW
f = 960 MHz
200 mW
100 mW
Pin = 300 mW
5
MRF557MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 317D–02
ISSUE C
STYLE 2:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION N AND R.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.45 5.20
C 0.075 0.100 1.91 2.54
D 0.033 0.039 0.84 0.99
F 0.097 0.104 2.46 2.64
H 0.348 0.383 8.84 9.72
J 0.008 0.012 0.24 0.30
K 0.285 0.320 7.24 8.12
N ––– 0.065 ––– 1.65
R ––– 0.128 ––– 3.25
T 0.025 0.040 0.64 1.01
F
D
K
H
R
A
1
24
3
T
SEATING
PLANE
J
C
MRF557
6
MOTOROLA RF DEVICE DATA
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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MRF557/D
*MRF557/D*
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