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SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for high-voltage applications as a high-power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
• Specified 50 Volt, 30 MHz Characteristics —
Output Power = 150 W (PEP)
Minimum Gain = 13 DB
Efficiency = 45%
• Intermodulation Distortion @ 150 W (PEP) —
IMD = -32 db (Max)
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
@ 150 W CW
MAXIMUM RATINGS
Rating Symbol Value Unit
Order this document
by MRF428/D
MRF428
150 W (PEP), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current — Continuous IC 20 Adc
Withstand Current — 10 s — 30 Adc
Total Device Dissipation @ TC = 25 °C
Derate above 25 °C
Storage Temperature Range T
55 Vdc
CEO
110 Vdc
CBO
4.0 Vdc
EBO
PD 320
-65 to +150 °C
stg
1.83
Watts
W/°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25 °C unless otherwise noted.)
C
R
θJC
0.5 °C/W
OFF CHARACTERISTICS
V
Collector-Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0)
Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)
55 — — Vdc
(BR)CEO
V
110 — — Vdc
(BR)CES
Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
1
V
110 — — Vdc
(BR)CBO
V
4.0 — — Vdc
(BR)EBO
(continued)
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ELECTRICAL CHARACTERISTICS — continued (T
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
= 25 °C unless otherwise noted.)
C
DC Current Gain
hFE 10 30 — —
(IC = 5.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
COB — 220 250 pF
FUNCTIONAL TESTS
Common-Emitter Amplifier Gain
(VCC = 50 Vdc, P
f = 30 MHz)
= 150 W (PEP), IC(max) = 3.32 Adc,
OUT
Output Power
(VCE = 50 Vdc, f = 30 MHz)
Collector Efficiency
(VCC = 50 Vdc, P
f = 30 MHz)
= 150 W (PEP), IC(max) = 3.32 Adc,
OUT
Intermodulation Distortion (1)
(VCE = 50 Vdc, P
= 150 W (PEP), IC = 3.32 Adc)
OUT
Electrical Ruggedness
(VCC = 50 Vdc, P
VSWR 30:1 at all Phase Angles)
= 150 W (PEP), IC(max) = 3.32 Adc,
OUT
NOTE:
1. To Mil-Std-1311 Version A, Test Method 2204B, Two Tone, Reference each Tone.
GPE 13 15 — dB
P
150 — — W (PEP)
OUT
η
IMD — -33 -30 dB
Ψ
45 — — %
No Degradation in Output Power
C1,C2,C7 — 170-780 pF, Arco 469
C3,C8,C9 — 0.1µF, 100 V Erie
C4 — 500 µF @ 6.0 V
C5 — 9.0-180 pF, Arco 463
C6 — 80-480 pF, Arco 466
C10 — 30 µF, 100 V
R1 — 10 Ω, 10 Watt
R2 — 10 Ω, 1.0 Watt
CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16” I.D., 5/16” Long
L2 — 10 µH Molded Choke
L3 — 12 Turns, #16 Enameled Wire Closewound, 1/4” I.D.
L4 — 5 Turns, 1/8” Copper Tubing, 9/16” I.D., 3/4” Long
L5 — 10 Ferrite Beads — Ferroxcube #56-590-65/3B
Figure 1. 30 MHz Test Circuit Schematic
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3 4
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Figure 10. Series Equivalent Impedance
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PACKAGE DIMENSIONS
STYLE 1:
PIN 1 EMITTER
PIN 2 BASE
PIN 3 EMITTER
PIN 4 COLLECTOR
Case 211-11
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION INCH.
DIM
A 0.960 0.990 24.39 25.14
B 0.465 0.510 11.82 12.95
C 0.229 0.275 5.82 6.98
D 0.216 0.235 5.49 5.96
E 0.084 0.110 2.14 2.79
H 0.144 0.178 3.66 4.52
J 0.003 0.007 0.08 0.17
K 0.435 — 11.05 —
M 45 °NOM 45 °NOM
Q 0.115 0.130 2.93 3.30
R 0.246 0.255 6.25 6.47
U 0.720 0.730 18.29 18.54
INCHES MILLIMETERS
MIN MAX MIN MAX
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266,
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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