Datasheet MRF329 Datasheet (Motorola)

Page 1
1
MRF329MOTOROLA RF DEVICE DATA
The RF Line
    
. . . designed primarily for wideband large–signal output and driver amplifier stages in the 100 to 500 MHz frequency range.
Specified 28 Volt, 400 MHz Characteristics — Output Power = 100 Watts Minimum Gain = 7.0 dB Efficiency = 50% (Min)
Built–In Matching Network for Broadband Operation Using Double Match
Technique
100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
Gold Metallization System for High Reliability
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
30 Vdc
Collector–Base Voltage V
CBO
60 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous
Collector Current — Peak
I
C
9.0 12
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
P
D
270
1.54
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) R
θJC
0.65 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, IB = 0)
V
(BR)CEO
30 Vdc
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, VBE = 0)
V
(BR)CES
60 Vdc
Emitter–Base Breakdown Voltage
(IE = 8.0 mAdc, IC = 0)
V
(BR)EBO
4.0 Vdc
NOTES: (continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF329/D

SEMICONDUCTOR TECHNICAL DATA
100 W, 100 to 500 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR NPN SILICON
CASE 333–04, STYLE 1
Motorola, Inc. 1994
REV 6
Page 2
MRF329 2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (continued)
Collector–Base Breakdown Voltage
(IC = 80 mAdc, IE = 0)
V
(BR)CBO
60 Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
I
CBO
5.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 Adc, VCE = 5.0 Vdc)
h
FE
20 80
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
C
ob
95 125 pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, P
out
= 100 W, f = 400 MHz)
G
PE
7.0 9.7 dB
Collector Efficiency
(VCC = 28 Vdc, P
out
= 100 W, f = 400 MHz)
η 50 60 %
Load Mismatch
(VCC = 28 Vdc, P
out
= 100 W, f = 400 MHz,
VSWR = 3:1 all angles)
ψ
No Degradation in Output Power
Figure 1. 400 MHz Test Circuit
RF
INPUT
RF
OUTPUT
DUT
Z1
C1 C2 C3 C4 C5 C6 C7 C8 C9 C11
L1
C12 C13
C14
C10
28 Vdc
L2
Z2
L3
+
C1, C2, C7, C9 — 1.0–20 pF Johanson (JMC 5501) C3, C4 — 36 pF 100 mil Chip Cap (ATC) C5, C6 — 50 pF 100 mil Chip Cap (ATC) C8 — 30 pF 100 mil Chip Cap (ATC) C10 — 2.0–150 pF 100 mil Chip Caps in Parallel (A TC) C11 — 1.0–10 pF Johanson (JMC 5201) C12, C13 — 1000 pF UNELCO Feedthru C14 — 0.1 µF Erie Redcap
L1 — 0.15 µH Molded Choke with Ferrite Bead
L1 — (Ferroxcube #56–590–65/4B) on Ground End
L2 — 4 Turns #18 AWG, 1/4 ID L3 — Ferroxcube VK200–19/4B
Z1 — Microstrip Line 2300 mils L x 210 mils W Z2 — Microstrip Line 2300 mils L x 280 mils W
Board — Glass Teflon, t = 0.062, εr = 2.56
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MRF329MOTOROLA RF DEVICE DATA
8.5
P , POWER OUTPUT (WATTS)
out
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency
Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage
Figure 6. Power Gain versus Frequency
120
100
80
60
40
20
G
PE
, POWER GAIN (dB)
f, FREQUENCY (MHz)
P
out
= 100 W
VCC = 28 V
100
VCC, SUPPLY VOLTAGE (VOLTS)
10
80
60
40
20
0
14 18 22 26 30
P , POWER OUTPUT (WATTS)
out
100
VCC, SUPPLY VOLTAGE (VOLTS)
10
80
60
40
20
0
14 18 22 26
8.5 W
30
Pin, INPUT POWER (WATTS)
P , POWER OUTPUT (WATTS)
out
120
100
80
60
40
20
0
P , POWER OUTPUT (WATTS)
out
150 200 250 300 350 400
0
0 2 4 6 8 10 12 100
Pin = 11 W
9 W225 MHz
VCC = 28 Vdc VCC = 28 Vdc
12.5
0
11.5
10.5
9.5
f, FREQUENCY (MHz)
100 200 300 400
400 MHz
Pin = 11 W
f = 100 MHz
6 W
4 W
6.5 W
8.5 W
6.5 W
Pin = 11 W
f = 225 MHz
f = 400 MHz
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MRF329 4
MOTOROLA RF DEVICE DATA
Figure 7. Series Equivalent Input/Output Impedance
Z
in
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power , voltage and frequency.
ZOL*
225
f = 100 MHz
300
400
f
MHz
Z
in
Ohms
ZOL*
Ohms
100 225 300 350 400
0.55 + j0.40
0.60 + j1.40
1.00 + j2.15
1.50 + j2.20
1.85 + j1.70
3.56 – j1.60
2.30 – j1.10
1.95 – j0.70
1.70 – j0.20
1.50 + j0.30
350
400
225
300
350
f = 100 MHz
Zo = 10
P
out
= 100 W, VCC = 28 V
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MRF329MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 333–04
ISSUE E
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. EMITTER
4. BASE
SEATING PLANE
N
Q 2 PL
M
A
M
0.13 (0.005) B
M
T
–A–
K
K
–B–
P
F G
H
–T–
N
J
N
C
1
2
3
4
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.965 0.985 24.51 25.02 B 0.390 0.410 9.91 10.41 C 0.250 0.290 6.73 7.36 D 0.190 0.210 4.83 5.33 E 0.095 0.115 2.42 2.92 F 0.215 0.235 5.47 5.96
G 0.725 BSC 18.42 BSC
H 0.155 0.175 3.94 4.44 J 0.004 0.006 0.10 0.15 K 0.195 0.205 4.95 5.21 L 0.740 0.770 18.80 19.55 N 0.415 0.425 10.54 10.80 P 0.390 0.400 9.91 10.16
Q 0.120 0.135 3.05 3.42
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MRF329 6
MOTOROLA RF DEVICE DATA
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 T anners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MRF329/D
*MRF329/D*
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