Datasheet MRF275G Datasheet (M A COM)

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

Order this document

by MRF275G/D

Power Field-Effect Transistor

N–Channel Enhancement–Mode

Designed primarily for wideband large–signal output and driver stages from

100 – 500 MHz.

• Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency — 50% (Min) 100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1

• Overall Lower Capacitance @ 28 V C

— 135 pF

iss

C

— 140 pF

oss

C

— 17 pF

rss

• Simplified AVC, ALC and Modulation

Typical data for power amplifiers in industrial and

commercial applications:

• Typical Performance @ 400 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 12.5 dB Efficiency — 60%

• Typical Performance @ 225 MHz, 28 Vdc Output Power — 200 Watts Power Gain — 15 dB Efficiency — 65%

G G

D

(FLANGE)

D

MRF275G

150 W, 28 V, 500 MHz

N–CHANNEL MOS

BROADBAND

100 – 500 MHz

RF POWER FET

S

CASE 375–04, STYLE 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V Drain–Gate Voltage

(RGS = 1.0 MΩ) Gate–Source Voltage V Drain Current — Continuous I Total Device Dissipation @ TC = 25°C

Derate above 25°C Storage Temperature Range T Operating Junction Temperature T

V

DSS

DGR

GS

D

P

D

stg

J

65 Vdc 65 Vdc

±40 Adc

26 Adc

400

2.27

–65 to +150 °C

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

REV 1

θJC

0.44 °C/W

1

Watts

W/°C

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage

(VGS = 0, ID = 50 mA)

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0)

Gate–Source Leakage Current

(VGS = 20 V, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V Drain–Source On–Voltage (VGS = 10 V, ID = 5 A) V Forward Transconductance (VDS = 10 V, ID = 2.5 A) g

DYNAMIC CHARACTERISTICS (1)

Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) C Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) C Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) C

FUNCTIONAL CHARACTERISTICS (2) (Figure 1)

Common Source Power Gain

(VDD = 28 V, P

Drain Efficiency

(VDD = 28 V, P

Electrical Ruggedness

(VDD = 28 V, P VSWR 30:1 at all Phase Angles)

1. Each side of device measured separately.

2. Measured in push–pull configuration.

= 150 W, f = 500 MHz, IDQ = 2 x 100 mA)

out

= 150 W, f = 500 MHz, IDQ = 2 x 100 mA)

out

= 150 W, f = 500 MHz, IDQ = 2 x 100 mA,

out

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

I

GSS

GS(th)

DS(on)

fs

iss

oss

rss

G

ps

η 50 55 — %

ψ

65 — — Vdc

— — 1 mA

— — 1 µA

1.5 2.5 4.5 Vdc

0.5 0.9 1.5 Vdc 3 3.75 — mhos

— 135 — pF — 140 — pF — 17 — pF

10 11.2 — dB

No Degradation in Output Power

REV 1

2

A

B

+V

GG

C14

B1

B1 Balun, 50 Ω, 0.086″ O.D. 2″ Long, Semi Rigid Coax B2 Balun, 50 Ω, Coax 0.141″ O.D. 2″ Long, Semi Rigid C1, C2, C3, C4, C10, C11, C12, C13 270 pF, ATC Chip Capacitor C5, C8 1.0–20 pF, Trimmer Capacitor, Johanson C6 22 pF, Mini–Unelco Capacitor C7 15 pF, Unelco Capacitor C9 2.1 pF, ATC Chip Capacitor C14, C15, C16, C20, C21, C22 0.1 µF, Ceramic Capacitor C17, C18 680 pF, Feedthru Capacitor C19 10 µF, 50 V, Electrolytic Capacitor, Tantalum L1, L2 10 Turns AWG #24,

L3, L4 10 Turns AWG #18,

R1

C1

Z1

C2

C5 C6 C7 C8

C3

Z2

C4

0.145″ O.D., 106 nH T aylor–Spring Inductor

0.340″ I.D., Enameled Wire

C15

L1

Z3 Z7Z5

Z4

L2

C20 C21

C16

D.U.T.

Figure 1. 500 MHz T est Circuit

C11

C12

L6

C19

B2

+28 V

+

C17 C18

L5

C22

L3

C10

C9

Z8Z6

C13

L4

BA

L5 Ferroxcube VK200 20/4B L6 4 Turns #16, 0.340″ I.D.,

Enameled Wire R1 1.0 kΩ,1/4 W Resistor W1 – W4 20 x 200 x 250 mils, Wear Pads,

Beryllium–Copper , (See

Component Location Diagram) Z1, Z2 1.10″ x 0.245″, Microstrip Line Z3, Z4, Z5, Z6 0.300″ x 0.245″, Microstrip Line Z7, Z8 1.00″ x 0.245″, Microstrip Line

Board material 0.060″ Teflon–fiberglass,

εr = 2.55, copper clad both sides, 2 oz. copper.

Points A are connected together on PCB. Points B are connected together on PCB.

REV 1

3

TYPICAL CHARACTERISTICS

300

250

200

150

100

, OUTPUT POWER (WATTS)

out

P

50

0

515

10

Pin, INPUT POWER (Watts)

225 MHz

Figure 2. Output Power versus Input Power

10

VDS = 10 V

9

V

= 2.5 V

GS(th)

8 7 6 5 4 3

, DRAIN CURRENT (AMPS)

D

I

2 1 0

0

VGS, GATE–SOURCE VOLTAGE (V)

2

315

400 MHz

IDQ = 2 x 100 mA VDD = 28 V

20

4

500 MHz

4.52.50.5 3.51.5

160 140 120 100

80 60

–2

VDS = 28 V IDQ = 2 x 100 mA Pin = Constant f = 500 MHz

42

, OUTPUT POWER (WATTS)

40

out

P

20

0

25

–10 00

–8

–6 –4

VGS, GATE–SOURCE VOLTAGE (V)

Figure 3. Output Power versus Gate Voltage

180

Pin = 14 W

10 W

6 W

IDQ = 2 x 100 mA f = 500 MHz

22 26

24

, OUTPUT POWER (WATTS)

out

P

160 140 120 100

80 60 40 20

0

14 1612

18 20 28

VDD, SUPPLY VOLTAGE (V)

Figure 4. Drain Current versus Gate Voltage

(Transfer Characteristics)

200 180 160 140 120 100

, OUTPUT POWER (WATTS)

out

P

80 60 40 20

0

14 1612 18 20 282422 26

VDD, SUPPLY VOLTAGE (V)

Pin = 14 W

IDQ = 2 x 100 mA f = 400 MHz

Figure 6. Output Power versus Supply Voltage

REV 1

4

10 W

6 W

Figure 5. Output Power versus Supply Voltage

250

200

150

100

, OUTPUT POWER (WATTS)

out

P

50

0

14 1612 18 20 282422 26

VDD, SUPPLY VOLTAGE (V)

IDQ = 2 x 100 mA f = 225 MHz

Figure 7. Output Power versus Supply Voltage

12 W

10 W

Pin = 4 W

TYPICAL CHARACTERISTICS

1000

C

oss

C, CAPACITANCE (pF)

100

10

1

515

10

VDS, DRAIN–SOURCE VOLTAGE (V)

C

iss

C

rss

VGS = 0 V f = 1.0 MHz

20

25

Figure 8. Capacitance versus Drain–Source V oltage*

*Data shown applies only to one half of

device, MRF275G

100

10

1.3 VDD = 28 V

1.2

1.1

1

0.9

0.8

, GATE–SOURCE VOLTAGE (NORMALIZED)

GS

V

0.7

30

–25 1750

25

500 100

75 125

TC, CASE TEMPERATURE (°C)

3 A

ID = 4 A

2 A

0.1 A

150

200

Figure 9. Gate–Source V oltage versus

Case T emperature

TC = 25°C

, DRAIN CURRENT (AMPS)

D

I

1

1 100

VDS, DRAIN–SOURCE VOLTAGE (V)

10

Figure 10. DC Safe Operating Area

REV 1

5

f = 500 MHz

VDD = 28 V, IDQ = 2 x 100 mA, P

f

(MHz)

225 1.6 – j2.30 3.2 – j1.50 400 1.9 + j0.48 2.3 – j0.19 500 1.9 + j2.60 2.0 + j1.30

Z

in

Ohms

= 150 W

out

ZOL*

Ohms

ZOL* = Conjugate of the optimum load impedance

ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency.

Note: Input and output impedance values given are

measured from gate to gate and drain to drain respectively.

Z

400

in

f = 500 MHz

225

400

Zo = 10 Ω

ZOL*

225

Figure 11. Series Equivalent Input/Output Impedance

REV 1

6

A

B

BIAS

C10 C11

C1

B1

B1 Balun, 50 Ω, 0.086″ O.D. 2″ Long,

B2 Balun, 50 Ω, 0.141″ O.D. 2″ Long,

C1, C2, C8, C9 270 pF, ATC Chip Capacitor C3, C5, C7 1.0–20 pF, Trimmer Capacitor C4 15 pF, ATC Chip Capacitor C6 33 pF, ATC Chip Capacitor C10, C12, C13, C16, C17 0.01 µF, Ceramic Capacitor C11 1.0 µF, 50 V, Tantalum C14, C15 680 pF, Feedthru Capacitor C18 20 µF, 50 V, Tantalum

C3 C4

C2

Semi Rigid Coax

R1

L1

L2

C14 C15

C12 C13

Z1 Z3 Z5

C5

Z2

R2

D.U.T.

R3

C16 C17

L1, L2 #18 Wire, Hairpin Inductor L3, L4 12 Turns #18, 0.340″ I.D.,

L5 Ferroxcube VK200 20/4B L6 3 Turns #16, 0.340″ I.D.,

R1 1.0 kΩ, 1/4 W Resistor R2, R3 10 kΩ, 1/4 W Resistor Z1, Z2 0.400″ x 0.250″, Microstrip Line Z3, Z4 0.870″ x 0.250″, Microstrip Line Z5, Z6 0.500″ x 0.250″, Microstrip Line

Board material 0.060″ Teflon–fiberglass,

εr = 2.55, copper clad both sides, 2 oz. copper.

L3

C6

Z4 Z6

L4

BA

L5 L6

C8

C7

C9

0.180″

Enameled Wire

C18

28 V

B2

0.200″

REV 1

7

Figure 12. 400 MHz T est Circuit

BIAS 0–6 V

R1

C3 C4

C8 C9

L2

C10

+

28 V

–

R2

T1

C5

C1 C2

C1 8.0–60 pF, Arco 404 C2, C3, C7, C8 1000 pF, Chip Capacitor C4, C9 0.1 µF, Chip Capacitor C5 180 pF, Chip Capacitor C6 100 pF and 130 pF,

Chips in Parallel

C10 0.47 µF, Chip Capacitor, 1215 or

Equivalent, Kemet

L1 10 Turns AWG #16, 1/4″ I.D.,

Enamel Wire, Close Wound

L2 Ferrite Beads of Suitable Material

for 1.5–2.0 µH Total Inductance

Board material 062″ fiberglass (G10),

εr ^ 5, Two sided, 1 oz. Copper.

Unless otherwise noted, all chip capacitors are ATC Type 100 or Equivalent.

D.U.T.

C6

R1 100 Ω, 1/2 W R2 1.0 k Ω, 1/2 W T1 4:1 Impedance Ratio, RF Transformer

T2 1:9 Impedance Ratio, RF Transformer.

NOTE: For stability, the input transformer T1 should be loaded

NOTE: with ferrite toroids or beads to increase the common NOTE: mode inductance. For operation below 100 MHz. The NOTE: same is required for the output transformer.

T2

Can Be Made of 25 Ω, Semi Rigid Coax, 47–52 Mils O.D.

Can Be Made of 15–18 Ω, Semi Rigid Coax, 62–90 Mils O.D.

L1

C7

Figure 13. 225 MHz T est Circuit

REV 1

8

R1

C14

B1

C15

L1

L3

L5

C17 C18

C16

BEADS 1–3

C22

+

C19

L6

C1 C2

C3 C4

W3 W4

C8

L4

BEADS 4–6

C5

C6 C7

W2 W1

L2

C20

MRF275G JL

Figure 14. MRF275G Component Location (500 MHz)

C10 C11

C9

C12 C13

B2

C21

(Not to Scale)

REV 1

9

MRF275G

JL

Figure 15. MRF275G Circuit Board Photo Master (500 MHz)

(Scale 1:1)

NOTE: S–Parameter data represents measurements taken from one chip only.

f

ÁÁÁÁ

ÁÁÁÁ ÁÁÁÁ

ÁÁÁÁ

T able 1. Common Source S–Parameters (VDS = 12 V, ID = 4.5 A)

MHz

30 40 50 60 70 80

90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 400 410 420

S

11

S

21

S

12

S

22

|S11| φ |S21| φ |S12| φ |S22| φ

0.822

0.846

0.842

0.838

0.836

0.841

0.849

0.857

0.864

0.868

0.871

0.874

0.876

0.880

0.885

0.891

0.896

0.900

0.904

0.907

0.909

0.912

0.915

0.918

0.922

0.925

0.927

0.930

0.932

0.934

0.936

0.938

0.941

0.943

0.944

0.945

0.947

0.948

0.949

0.951

–172 –173 –174 –175 –175 –176 –176 –176 –176 –176 –176 –176 –176 –176 –177 –177 –177 –177 –177 –177 –177 –178 –178 –178 –178 –179 –179 –179 –179 –180 –180

180 180 179 179 179 179 179 178 178

6.34

4.32

3.62

3.03

2.76

2.43

2.19

1.89

1.66

1.43

1.25

1.15

1.11

1.06

1.01

0.96

0.87

0.77

0.69

0.63

0.60

0.58

0.56

0.54

0.49

0.43

0.41

0.40

0.39

0.35

0.38

0.35

0.33

0.30

0.29

0.28

0.26

0.25

91 81 79 79 80 78 74 68 63 60 59 59 59 59 55 51 45 43 42 43 43 44 42 40 34 32 28 30 32 31 32 31 28 23 21 21 22 25 24 25

0.027

0.028

0.029

0.028

0.026

0.024

0.023

0.022

0.020

0.018

0.017

0.018

0.017

0.016

0.015

0.014

0.013

0.012

0.011

0.009

0.008

0.010

3 –6 –8 –5 –3 –4 –7

–13 –19 –19 –19 –17 –16 –17 –18 –23 –26 –26 –25 –23 –23 –22 –20 –20 –24 –27 –27 –23 –14

–9 –9

–12 –12 –10

–4

1

3

4

5 11

0.946

0.859

0.863

0.923

1.010

1.080

1.150

1.110

1.050

0.958

0.905

0.914

0.969

1.060

1.130

1.190

1.140

1.050

0.958

0.924

0.981

1.040

1.150

1.170

1.130

1.010

0.964

0.936

0.948

1.000

1.070

1.100

1.120

1.080

1.020

0.966

0.936

1.010

1.040

–173 –172 –175 –177 –178 –178 –176 –176 –177 –175 –176 –177 –178 –178 –177 –178 –179 –177 –176 –175 –178 –180 –179 –180

179 –180 –178 –178 –178

180

178

180 –180

180

180 –180 –179

179

178

REV 1

10

T able 1. Common Source S–Parameters (VDS = 12 V, ID = 4.5 A) continued

f

ÁÁÁÁ

f

ÁÁÁÁ

MHz

430 440 450 460 470 480 490 500 600 700 800 900

1000

MHz

30 40 50 60 70 80

90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 270

S

11

S

21

S

12

S

22

|S11| φ |S21| φ |S12| φ |S22| φ

0.952

0.953

0.955

0.956

0.957

0.958

0.960

0.956

0.958

0.962

0.965

0.964

178 177 177 177 177 176 176 176 175 172 170 168 165

0.25

0.24

0.21

0.20

0.19

0.18

0.11

0.10

0.08

0.07

22 19 16 15 16 18 18 19 12 14 12 16 12

0.010

0.009

0.008

0.009

0.010

0.007

0.018

0.029

0.021

19 22 21 11 16 27 40 46 49 61 51 72 57

1.080

1.100

1.080

0.992

0.975

0.974

1.010

0.940

0.989

0.967

0.973

1.010

177 178 179 177 178 179 178 177 175 173 172 170 168

T able 2. Common Source S–Parameters (VDS = 24 V, ID = 0.35 mA)

S

11

|S11| φ |S21| φ |S12| φ |S22| φ

0.829

0.858

0.852

0.846

0.843

0.847

0.855

0.865

0.872

0.874

0.876

0.878

0.880

0.883

0.888

0.894

0.899

0.902

0.905

0.907

0.909

0.912

0.915

0.918

0.922

–170 –172 –173 –174 –175 –175 –175 –176 –176 –176 –176 –176 –176 –176 –177 –177 –177 –177 –177 –177 –178 –178 –178 –178 –178

9.20

6.30

5.28

4.42

4.01

3.53

3.18

2.75

2.43

2.10

1.84

1.70

1.63

1.56

1.49

1.42

1.29

1.14

1.02

0.94

0.89

0.87

0.86

0.83

0.80

S

21

92 83 80 80 81 80 76 70 65 62 61 61 61 61 58 53 47 45 44 46 45 46 44 42 36

0.023

0.022

0.023

0.024

0.023

0.022

0.020

0.019

0.018

0.017

0.015

0.014

0.013

S

12

4 –4 –6 –3 –1 –2 –5

–10 –16 –16 –15 –14 –13 –13 –14 –18 –22 –24 –23 –19 –16 –15 –15 –17 –19

0.915

0.834

0.836

0.892

0.978

1.050

1.110

1.080

1.020

0.932

0.882

0.889

0.943

1.030

1.100

1.160

1.120

1.030

0.941

0.903

0.957

0.961

1.020

1.120

1.140

S

22

–171 –170 –174 –175 –177 –177 –176 –175 –176 –174 –175 –176 –177 –177 –176 –176 –177 –176 –175 –174 –177 –179 –178 –178 –180

REV 1

11

f

MHz

ÁÁÁÁ

f

ÁÁÁÁ

280 290 300 310 320 330 340 350 360 370 380 390 400 410 420 430 440 450 460 470 480 490 500 600 700 800 900

1000

T able 2. Common Source S–Parameters (VDS = 24 V, ID = 0.35 mA) continued

S

11

|S11| φ |S21| φ |S12| φ |S22| φ

0.925

0.927

0.929

0.931

0.932

0.934

0.937

0.939

0.941

0.943

0.944

0.945

0.946

0.947

0.949

0.950

0.952

0.953

0.954

0.955

0.956

0.957

0.958

0.956

0.959

0.963

0.968

0.969

–179 –179 –179 –179 –180 –180

180 180 179 179 179 179 178 178 178 178 177 177 177 177 176 176 176 175 172 170 168 165

0.73

0.65

0.62

0.60

0.57

0.53

0.56

0.53

0.50

0.46

0.44

0.41

0.40

0.38

0.37

0.36

0.31

0.30

0.29

0.28

0.24

0.16

0.14

0.12

0.09

S

21

34 32 32 34 33 34 33 30 25 23 22 24 27 26 26 23 21 18 17 17 19 20 20 12 13 10 11

7

0.013

0.011

0.010

0.009

0.008

0.009

0.010

0.006

0.019

0.023

0.026

0.025

S

12

–20 –18 –15

–9 –6 –4 –2

0 0 0 2

8 16 20 22 25 26 28 24 29 36 45 50 90 63 63 84 70

1.110

0.994

0.948

0.916

0.934

0.985

1.050

1.090

1.110

1.080

1.010

0.956

0.926

1.000

1.040

1.070

1.090

1.070

0.990

0.963

0.959

0.996

0.924

0.986

0.963

0.967

1.000

S

22

–179 –177 –177 –177 –180 –180

179 –179 –178 –179 –179 –179 –178 –180

179

180 –180

178

179 –179

180

178

176

174

173

171

169

MHz

30 40 50 60 70 80

90 100 110 120 130

REV 1

12

T able 3. Common Source S–Parameters (VDS = 28 V, ID = 0.39 mA)

S

11

|S11| φ |S21| φ |S12| φ |S22| φ

0.834

0.863

0.857

0.851

0.848

0.852

0.860

0.869

0.876

0.878

0.879

–169 –172 –173 –174 –175 –175 –175 –176 –176 –176 –176

10.08

6.91

5.79

4.86

4.41

3.87

3.49

3.03

2.68

2.31

2.03

S

21

93 83 81 81 82 80 77 71 66 63 62

0.021

0.022

0.023

0.022

0.021

0.019

0.018

S

12

4 –4 –5 –3 –1 –1 –5 –9

–14 –14 –15

0.807

0.828

0.830

0.883

0.970

1.040

1.100

1.070

1.010

0.923

0.876

S

22

–171 –170 –173 –175 –177 –177 –176 –175 –176 –174 –175

T able 3. Common Source S–Parameters (VDS = 28 V, ID = 0.39 mA) continued

f

ÁÁÁÁ

MHz

140 150 160 170 180 190 200 210 220 230 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 400 410 420 430 440 450 460 470 480 490 500 600 700 800 900

1000

S

11

S

21

S

12

S

22

|S11| φ |S21| φ |S12| φ |S22| φ

0.881

0.883

0.886

0.890

0.896

0.901

0.904

0.907

0.908

0.910

0.912

0.916

0.919

0.922

0.925

0.927

0.929

0.931

0.933

0.934

0.937

0.939

0.941

0.943

0.944

0.945

0.946

0.947

0.949

0.950

0.951

0.953

0.954

0.955

0.956

0.957

0.955

0.958

0.963

0.966

0.968

–176 –176 –177 –177 –177 –177 –177 –177 –177 –178 –178 –178 –178 –179 –179 –179 –179 –179 –180 –180

180 180 179 179 179 179 178 178 178 178 177 177 177 177 176 176 176 174 172 170 168 165

1.87

1.79

1.72

1.64

1.56

1.42

1.26

1.13

1.03

0.99

0.96

0.95

0.93

0.89

0.81

0.72

0.69

0.66

0.63

0.59

0.62

0.59

0.55

0.51

0.49

0.46

0.44

0.43

0.42

0.41

0.40

0.39

0.35

0.33

0.32

0.31

0.26

0.18

0.15

0.13

0.10

62 62 62 58 54 48 46 45 47 46 47 45 42 37 35 33 33 35 34 35 34 31 26 24 23 25 27 26 27 24 21 19 17 18 19 20 21 13 12

0.018

0.017

0.015

0.013

0.014

0.013

0.012

0.011

0.012

0.011

0.009

0.010

0.009

0.008

0.007

0.010

0.012

0.010

0.008

0.009

0.010

0.012

0.010

0.012

0.018 9 9 6

0.020

0.028

0.033

–13 –11 –11 –12 –16 –21 –19 –14 –13 –15 –13 –10 –12 –15 –16 –16 –10

5 16 14

3

4

8 11 17 24 20 19 29 41 40 34 26 30 43 60 65 67 64 89 81 73

0.884

0.934

1.020

1.090

1.150

1.110

1.030

0.938

0.897

0.948

0.956

1.020

1.120

1.140

1.110

0.988

0.944

0.920

0.936

0.989

1.050

1.080

1.110

1.070

1.010

0.949

0.922

0.995

1.030

1.060

1.090

1.070

0.983

0.964

0.956

0.993

0.926

0.984

0.961

0.967

0.997

–176 –177 –177 –176 –176 –177 –176 –175 –174 –176 –179 –178 –178 –179 –178 –176 –177 –177 –180 –180

180 –179 –178 –179 –178 –178 –178 –180

179

180 –180

178

179 –180

179

178

176

174

173

171

169

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Figure 16. MRF275G T est Fixture

RF POWER MOSFET CONSIDERA TIONS

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate–to–drain (Cgd), and gate–to– source (Cgs). The PN junction formed during the fabrication of the MOSFET results in a junction capacitance from drain– to–source (Cds).

These capacitances are characterized as input (C put (C

) and reverse transfer (C

oss

) capacitances on data

rss

iss

), out-

sheets. The relationships between the inter–terminal capacitances and those given on data sheets are shown below. The C

can be specified in two ways:

iss

1. Drain shorted to source and positive voltage at the gate.

2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications.

DRAIN

C

ds

SOURCE

C

iss

C

oss

C

rss

= Cgd + C

= C

gd

gs

ds

The C

C

gd

GA TE

C

gs

given in the electrical characteristics table was

iss

measured using method 2 above. It should be noted that C

, C

iss

oss

are measured at zero drain current and are

rss

provided for general information about the device. They are not RF design parameters and no attempt should be made to use them as such.

DRAIN CHARACTERISTICS

One figure of merit for a FET is its static resistance in the

full–on condition. This on–resistance, V

DS(on)

, occurs in the linear region of the output characteristic and is specified under specific test conditions for gate–source voltage and drain current. For MOSFETs, V

has a positive temperature

DS(on)

coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device.

GATE CHARACTERISTICS

The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high — on the order of 109 ohms — resulting in a leakage current of a few nanoamperes.

Gate control is achieved by applying a positive voltage slightly in excess of the gate–to–source threshold voltage, V

GS(th)

.

Gate Voltage Rating — Never exceed the gate voltage rating (or any of the maximum ratings on the front page). Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region.

Gate Termination — The gates of this device are essentially capacitors. Circuits that leave the gate open–circuited or floating should be avoided. These conditions can result in turn–on of the devices due to voltage build–up on the input capacitor due to leakage currents or pickup.

Gate Protection — These devices do not have an internal monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended.

Using a resistor to keep the gate–to–source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate–drain capacitance. If the gate–to–source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate

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may be large enough to exceed the gate–threshold voltage and turn the device on.

HANDLING CONSIDERATIONS

When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is applied. As a final note, when placing the FET into the system it is designed for, soldering should be done with grounded equipment.

DESIGN CONSIDERATIONS

The MRF275G is a RF power N–channel enhancement mode field–effect transistor (FETs) designed for HF, VHF and UHF power amplifier applications. M/A-COM RF MOSFETs feature a vertical structure with a planar design.

M/A-COM Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs.

The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from

thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal.

DC BIAS

The MRF275G is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF275G was characterized at IDQ = 100 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters.

The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Some applications may require a more elaborate bias system.

GAIN CONTROL

Power output of the MRF275G may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems.

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P ACKAGE DIMENSIONS

U G

12

R

5

K

34

Q

RADIUS 2 PL

0.25 (0.010) B

–B–

M

A

T

M

D

E

N

H

–A–

J

SEATING

–T–

PLANE

C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 1.330 1.350 33.79 34.29 B 0.370 0.410 9.40 10.41 C 0.190 0.230 4.83 5.84 D 0.215 0.235 5.47 5.96 E 0.050 0.070 1.27 1.77 G 0.430 0.440 10.92 11.18 H 0.102 0.112 2.59 2.84 J 0.004 0.006 0.11 0.15 K 0.185 0.215 4.83 5.33 N 0.845 0.875 21.46 22.23 Q 0.060 0.070 1.52 1.78 R 0.390 0.410 9.91 10.41 U 1.100 BSC 27.94 BSC

STYLE 2:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. GATE

5. SOURCE

MILLIMETERSINCHES

CASE 375–04

ISSUE D

Specifications subject to change without notice.

n

North America: Tel. (800) 366-2266, Fax (800) 618-8883

n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n

Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020

Visit www.macom.com for additional data sheets and product information.

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Datasheet MRF275G Datasheet (M A COM)

Specifications and Main Features

Frequently Asked Questions

User Manual