Datasheet MRF1946A, MRF1946 Datasheet (Motorola)

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1
MRF1946 MRF1946AMOTOROLA RF DEVICE DATA
The RF Line
   
. . . designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment.
High Common Emitter Power Gain
Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60%
Diffused Emitter Resistor Ballasting
Characterized to 220 MHz
Load Mismatch at High Line and Overdrive Conditions
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
16 Vdc
Collector–Base Voltage V
CBO
36 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
8.0 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
100
0.57
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
Junction Temperature T
J
200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
1.75 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V
(BR)CEO
16 Vdc
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V
(BR)CES
36 Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V
(BR)EBO
4.0 Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
I
CES
5.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
h
FE
40 75 150
(continued)
Order this document
by MRF1946/D

SEMICONDUCTOR TECHNICAL DATA

30 W, 136–220 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 211–07, STYLE 1
MRF1946
CASE 145A–09, STYLE 1
MRF1946A
Motorola, Inc. 1994
REV 6
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MRF1946 MRF1946A 2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
C
ob
75 100 pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, P
out
= 30 W, f = 175 MHz)
G
pe
10 11 dB
Collector Efficiency
(VCC = 12.5 Vdc, P
out
= 30 W, f = 175 MHz)
η 60 70 %
Load Mismatch
(VCC = 15.5 Vdc, Pin = 2.0 dB Overdrive, Load VSWR = 30:1)
ψ
No Degradation in Power Output
Figure 1. Broadband Test Circuit Schematic
C1 — 56 pF Mini–Unelco, 3HS0006–56 C2 — 47 pF Mini–Unelco, 3HS0006–47 C3, C4 — 180 pF Chip Cap, ATC 100B181JC500 C5 — 150 pF Unelco, J101–150 C6 — 39 pF Mini–Unelco, 3HS0006–39 C7, C8 — 1000 pF Chip Cap, ATC 100B102JC50 C9 — 0.1 µF Ceramic Capacitor C10 — 10 µF, 25 V Electrolytic Capacitor C11 — 56 pF Mini–Unelco, 3HS0006–56
L1 — 2 Turns #18 AWG, 0.125ID L2, L3 — Circuit Board and Mounting Pad Inductance L4 — 3 Turns #18 AWG, 0.125 ID L5 — 6 Turns #16 Enameled, 0.250″ ID
RFC1 — 0.15 µH Molded Choke w/Ferrite Bead RFC2 — Ferrite Choke, Fair Rite VK200–4B
Board Material — 1/32, Glass Teflon, 1 oz. Cu Plating Bead — Ferroxcube
RFC1
DUT
+12.5
Vdc
C1
C10
B
L1 L2
C2 C3
C4
RFC2L5
L3 L4
C6
C7
C5C11
C8 C9
+
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MRF1946 MRF1946AMOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency
Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage
Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage
P , OUTPUT POWER (WATTS)
out
P , OUTPUT POWER (WATTS)
out
P , OUTPUT POWER (WATTS)
out
P , OUTPUT POWER (WATTS)
out
P , OUTPUT POWER (WATTS)
out
P , OUTPUT POWER (WATTS)
out
60
Pin, INPUT POWER (WATTS)
0
48
36
24
12
0
1 2 3 4 5
50
230210190170150130
f, FREQUENCY (MHz)
40
30
20
10
0
50
40
30
20
10
5
VCC, SUPPLY VOLTAGE (VOLTS)
6 7 8 9 10 11 12 13 14 15
50
40
30
20
10
5
VCC, SUPPLY VOLTAGE (VOLTS)
6 7 8 9 10 11 12 13 14 15
50
40
30
20
10
5
VCC, SUPPLY VOLTAGE (VOLTS)
6 7 8 9 10 11 12 13 14 15
50
40
30
20
10
5
VCC, SUPPLY VOLTAGE (VOLTS)
6 7 8 9 10 11 12 13 14 15
VCC = 12.5 V
f = 136 MHz
150 MHz
175 MHz
220 MHz
3 W 2 W
1 W
VCC = 12.5 V
Pin = 4 W
Pin = 4 W
3 W
2 W
1 W
Pin = 4 W
3 W
2 W
1 W
Pin = 4 W
3 W
2 W
1 W
Pin = 4 W
3 W
2 W
1 W
f = 220 MHz f = 175 MHz
f = 150 MHz
f = 136 MHz
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MRF1946 MRF1946A 4
MOTOROLA RF DEVICE DATA
Figure 8. Typical Performance in a Broadband Circuit
G
pe
, POWER GAIN (dB)
170
f, FREQUENCY (MHz)
155 160 165 175
100
12
80
60
20
c
η
, COLLECTOR EFFICIENCY
G
pe
η
c
INPUT VSWR
Pin = 3 W VCC = 12.5 V
150
40
10
8
6
4
2.0:1
1.5:1
1.1:1
Figure 9. Series Equivalent Input and
Output Impedance
Z
in
f = 136 MHz
220
150
ZOL*
f = 136 MHz
175
175
220
150
Zo = 10
f
MHz
Z
in
Ohms
ZOL*
Ohms
136 150 175 220
0.60 – j0.48
0.63 – j0.26
0.62 + j0.13
0.73 + j0.57
2.22 – j0.74
2.30 – j0.40
2.35 – j0.04
2.20 + j0.43
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency.
VCC = 12.5 Vdc, P
out
= 30 W
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MRF1946 MRF1946AMOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 211–07
ISSUE N
MRF1946
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
U
M
M
Q
R
B
1
4
32
D
K
E
SEATING PLANE
C
J
H
S
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.960 0.990 24.39 25.14 B 0.370 0.390 9.40 9.90 C 0.229 0.281 5.82 7.13 D 0.215 0.235 5.47 5.96 E 0.085 0.105 2.16 2.66 H 0.150 0.108 3.81 4.57 J 0.004 0.006 0.11 0.15 K 0.395 0.405 10.04 10.28 M 40 50 40 50 Q 0.113 0.130 2.88 3.30 R 0.245 0.255 6.23 6.47 S 0.790 0.810 20.07 20.57 U 0.720 0.730 18.29 18.54
_ _ _ _
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
CASE 145A–09
ISSUE M
MRF1946A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.370 0.385 9.40 9.78 B 0.320 0.330 8.13 8.38 C 0.670 0.790 17.02 20.07 D 0.215 0.235 5.46 5.97 E 0.070 ––– 1.78 ––– J 0.003 0.007 0.08 0.18 K 0.490 ––– 12.45 ––– L 0.055 0.070 1.40 1.78 M 45 NOM 45 NOM P ––– 0.050 ––– 1.27 R 0.299 0.307 7.59 7.80 S 0.158 0.178 4.01 4.52 T 0.083 0.100 2.11 2.54 U 0.098 0.132 2.49 3.35
_ _
SEATING PLANE
S
J
U
K
D
L
A
R
M
3
1
42
B
E
P
T
8–32UNC–2A
WRENCH FLAT
C
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MRF1946 MRF1946A 6
MOTOROLA RF DEVICE DATA
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MRF1946/D
*MRF1946/D*
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