Datasheet MRA1000-3.5L Datasheet (Motorola)

1

MRA1000–3.5LMOTOROLA RF DEVICE DATA

The RF Line

  

Designed primarily for wideband, large–signal output and driver amplifier
stages to 1000 MHz.

• Designed for Class A Linear Power Amplifiers

• Specified 19 Volt, 1000 MHz Characteristics:

Output Power — 3.5 Watts
Power Gain — 10 dB, Small–Signal

• Built–In Matching Network for Broadband Operation

• Gold Metallization for Improved Reliability

• Diffused Ballast Resistors

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter V oltage V

CEO

28 Vdc

Collector–Base Voltage V

CBO

50 Vdc

Emitter–Base Voltage V

EBO

3.5 Vdc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

22

0.125

Watts
W/°C

Operating Junction Temperature T

J

200 °C

Storage Temperature Range T

stg

–65 to +200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case (TC = 70°C) R

θJC

8 °C/W

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage (IC = 10 mA, IB = 0) V

(BR)CEO

28 – – Vdc

Collector–Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) V

(BR)CES

50 – – Vdc

Collector–Base Breakdown Voltage (IC = 10 mA, IE = 0) V

(BR)CBO

50 – – Vdc

Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0) V

(BR)EBO

3.5 – – Vdc

Collector Cutoff Current (VCB = 30 V, IE = 0) I

CBO

– – 10 mAdc

. (continued)

Order this document

by MRA1000–3.5L/D



SEMICONDUCTOR TECHNICAL DATA



10 dB, 1000 MHz

3.5 W

BROADBAND

UHF POWER TRANSISTOR

CASE 145D–02, STYLE 1

(.380 SOE)

 Motorola, Inc. 1997

REV 1

MRA1000–3.5L
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

DC Current Gain (IC = 250 mA, VCE = 5 V) h

FE

20 – 90 –

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 24 V, IE = 0, f = 1 MHz) C

ob

– – 15 pF

FUNCTIONAL TESTS

Common–Emitter Amplifier Small–Signal Gain

(VCE = 19 V, Pin = 1 mW, f = 1 GHz, IC = 600 mA)

G

SS

10 – – dB

Load Mismatch

(VCE = 19 V, IC = 600 mA, P

out

= 3.5 W, f = 1 GHz,

Load VSWR = ∞:1, All Phase Angles)

ψ

No Degradation in Output Power

Overdrive (VCE = 19 V, IC = 600 mA, f = 1 GHz)

(No degradation)

P

inover

– – 1.75 W

TYPICAL CHARACTERISTICS

Table 1. Common Emitter S–Parameters

V

CE

I

C

f

S

11

S

21

S

12

S

22

V

CE

(Volts)

I

C

(mA)

f

(GHz)

Mag

éĂφ

Mag

éĂφ

Mag

éĂφ

Mag

éĂφ

19 600 0.5 0.91 174 1.78 53 0.03 23 0.55 –164

0.6 0.9 173 1.64 47 0.03 21 0.58 –170

0.7 0.87 171 1.53 36 0.03 19 0.63 –159

0.8 0.85 168 1.51 24 0.03 15 0.68 –157

0.9 0.82 168 1.49 10 0.03 5 0.74 –158
1 0.78 168 1.5 –7 0.03 –4 0.83 –160

Table 2. Zin and ZOL* versus Frequency

VCC = 19 V, Pc = 3.5 W

Freq.

ZOL* Zin (Ohms)

Freq.

(MHz)

Re Im Re Im

500 14.6 –6.31 2.36 2.53
600 13.2 –4.07 2.74 3.18
700 11.7 –8.95 3.36 4.14
800 9.95 –9.65 4.12 5.13
900 7.72 –9.72 4.99 5.33

1000 4.67 –8.74 6.36 5.04

ZOL* = Conjugate of the optimum lead impedance into which the device output operates at a given frequency, output power and voltage.

3

MRA1000–3.5LMOTOROLA RF DEVICE DATA

0.2

Figure 1. Series Equivalent Input/Output Impedance

0

0.2

0.4

0.6

0.8

1.0

1.5

2.0

5.0

10

10

5.0

4.0

3.0

2.0

1.5

1.0

0.8

0.6

0.4

0.2

3.0

4.0

800

500

f = 1000 MHz

700

900

f = 500 MHz

900

800

700

600

1000

Z

in

ZOL*

Zo = 50

Ω

VCC = 19 V, Po = 3.5 W, Zo = 50

Ω

Figure 2. Power Input versus Power Output

7.0

6.0

5.0

4.0

3.0

2.0

0

10009008007006000

Pin, INPUT POWER (mW)

P

out

, OUTPUT POWER (WATTS)

1.0

500400300200100

600

0.4 0.6 0.8 1.0 1.5

2.0

3.0 4.0 5.0 10

Figure 3. 1 GHz Test Circuit

Figure 4. Bias Circuit

V

BIAS

RF IN

L1

L2

C6 C7 C8 C9

L3

L4

VCC = 19 Vdc

RF
OUT

R2

C5

C4

C3

C2

C1

R1

Z1 Z2 Z5 Z6

Z3

Z4

C1, C3, C5, C6, C7 500 pF, ATC
C2, C4 0.8 – 10 pF, JFD
C9 0.1 µF, 50 V, Ceramic
L1 7T, 20 Gauge on 200 Mil Ferrite Toroid
L2 8T, 20 Gauge, 100 Mil Dia.
L3 11T, 20 Gauge, 100 Mil Dia.

L4 8T, 20 Gauge on 275 Mil Ferrite Toroid

R1, R2 15 Ω, 1/4 W att
Z1 50 Ω, Microstripline, ȏ = 0.110 λ
Z2 10 Ω, Microstripline, ȏ = 0.162 λ
Z3, Z4 50 Ω, Microstripline, ȏ = 0.052 λ
Z5 24 Ω, Microstripline, ȏ = 0.080 λ
Z6 50 Ω, Microstripline, ȏ = 0.125 λ

V

SUPPLY

V

CC

V

BIAS

V

SUPPLY = 21.6 Vdc

2N2222

3 x 11

Ω

5 W

TIP41

180

Ω

2.7 k

Ω

4.7 k

Ω

4.7

Ω

68

Ω

1.0 k

Ω

+

MRA1000–3.5L
4

MOTOROLA RF DEVICE DATA

P ACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. EMITTER

2. BASE

3. EMITTER

4. COLLECTOR

R

C

A

W

V

8–32UNC–2A

J

H

D

K

B

3

4

2

1

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.320 0.385 9.28 9.77
B 0.320 0.330 8.13 8.38
C 0.700 0.778 17.78 19.76
D 0.220 0.230 5.59 5.84
H 0.160 0.170 4.07 4.31
J 0.003 0.006 0.08 0.15
K 0.490 0.520 12.45 13.20
R 0.248 0.275 6.30 7.23
V 0.100 0.130 2.54 3.30
W 0.055 0.065 1.40 1.65

CASE 145D–02

ISSUE A

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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MRA1000–3.5L/D

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