Page 1
1/10
¡
The MR27V801D is a 8Mbit electrically Programmable Read-Only Memory organized as 1,048,576
word x 8bit. The MR27V801D operates on a single +3V-3.3V power supply and is TTL compatible.
Since the MR27V801D operates asynchronously , external clocks are not required , making this
device easy-to-use. The MR27V801D is suitable as large-capacity fixed memory for microcomputers
and data terminals. It is manufactured using a CMOS double silicon gate technology and is offered
in 32-pin DIP, 32-pin SOP or 32-pin TSOP packages.
1A
MR27V801D
1,048,576-Word x 8-Bit One Time PROM
DESCRIPTION
FEATURES
• 1,048,576 word x 8bit
• Single +3V-3.3V power supply
• Access time 100ns access time (Vcc=+3V)
80ns access time (Vcc=+3.3V)
• Input / Output TTL compatible
• Three-state output
• Packages
32-pin plastic DIP (DIP32-P-600-2.54) (Product name : MR27V801DRA)
32-pin plastic SOP (SOP32-P-525-1.27-K) (Product name : MR27V801DMA)
32-pin plastic TSOP (TSOP I 32-P-814-0.50-K) (Product name : MR27V801DTA)
Semiconductor
November 1999
Page 2
PIN CONFIGURATION (TOP VIEW)
MR27V801D
2/10
PIN NAMES
FUNCTIONS
A0 - A19 Address input
D0 - D7 Data output
CE
Output enable /
Program power supply voltage
V
CC
Power supply voltage
OE/V
PP
Chip enable
V
SS
GND
A19
A18
A17
A13
A8
A9
A11
D6
D5
D4
D3
A14
32
31
30
2
3
4
5
29
28
27
26
6
7
8
9
25
24
23
22
10
11
12
13
21
20
19
18
14
15
16 17
A16
A7
A6
A5
A4
A3
A2
D1
D2
1
CE
A15
A12
A1
A0
D0
V
SS
V
CC
OE/Vpp
A10
D7
32-pin DIP
A19
A18
A17
A13
A8
A9
A11
D6
D5
D4
D3
A14
32
31
30
2
3
4
5
29
28
27
26
6
7
8
9
25
24
23
22
10
11
12
13
21
20
19
18
14
15
16 17
A16
A7
A6
A5
A4
A3
A2
D1
D2
1
CE
A15
A12
A1
A0
D0
V
SS
V
CC
OE/Vpp
A10
D7
32-pin SOP
A19 A18
A17
A13A8A9
A11A14
A16
A7
A6
A5
A4
A3
A2 D1
D2
CE
A15
A12
A1
A0
D0
V
SS
V
CC
OE/Vpp
A10
32-pin TSOP
32313029282726252423222120191817
12345678910111213141516
D3 D5 D7
D4 D6
Page 3
3/10
BLOCK DIAGRAM
FUNCTION TABLE
STAND-BY
READ
MODE
CE
V
CC
L
L
L
H
*: Don't Care
3.0V to 3.3V
D0 - D7
D
OUT
Hi-Z
Hi-Z
PROGRAM
D
IN
PROGRAM INHIBIT
Hi-Z
PROGRAM VERIFY
D
OUT
MR27V801D
OE/V
PP
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
D0
CE OE/V
PP
CE PGMOE
Address Buffer
Row Decoder
Column Decoder
Memory Matrix
Multiplexer
Output Buffer
D1 D2 D3 D4 D5 D6 D7
1,048,576X8-Bit
OUTPUT DISABLE
4.0V
H
L
L
H
L
*
9.75V
Page 4
4/10
Operating temperature under bias
Storage temperature
Input voltage
Output voltage
Power supply voltage
Program power supply voltage
Power dissipation per package
Parameter
Symbol
Topr
UnitValueCondition
RECOMMENDED OPERATING CONDITIONS
VCC power supply voltage
VPP power supply voltage
Input "H" level
Input "L" level
Parameter Symbol
V
CC
Unit
3.6
Typ.
2.7
Condition
T
stg
V
I
V
O
V
CC
V
PP
P
D
0 to 70
-55 to 125
V-0.5 to V
CC
+ 0.5
V-0.5 to VCC + 0.5
V-0.5 to 5
V-0.5 to 11.5
W1.0
-
relative to V
SS
(Ta=0 to 70°C)
Min. Max.
V
VCC+0.5
-0.5
-
V
V
CC
+0.5*2.2
-
V
0.6-0.5**
-
V
OE/V
PP
V
IH
V
IL
VCC=2.7V - 3.6V
Voltage is relative to Vss
ABSOLUTE MAXIMUM RATINGS
-
-
MR27V801D
°C
°C
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.
Page 5
5/10
ELECTRICAL CHARACTERISTICS (Read operation)
DC Characteristics 1
DC Characteristics 2
MR27V801D
Input leakage current
Output leakage current
V
CC
power supply current
(Standby)
V
CC
power supply current
(Read)
V
PP
power supply current
Parameter
Symbol
UnitCondition
(V
CC
=3V±0.3V, Ta=0 to 70°C)
Input "H" level
Input "L" level
Output "H" level
Output "L" level
Voltage is relative to Vss
I
LI
10
Typ.
-
Min. Max.
I
LO
I
CCSC
I
CCST
I
CCA
µA
10
-
µA
50
-
µA
-
CE=V
CC
1
-
CE=V
IH
25
-
mA
tc=100ns
-
-
I
PP
V
IH
V
IL
V
OH
V
OL
10
-
µA
OE/V
PP=VCC
VCC+0.5*
2.2
V
-
0.6-0.5**
V
-
-
2.4
V
I
OH
=-400µA
0.4
-
V
I
OL
=2.1mA
-
-
-
-
-
CE=V
IL,
OE/VPP=V
IH
VI=0 to Vcc
VO=0 to Vcc
mA
Input leakage current
Output leakage current
V
CC
power supply current
(Standby)
V
CC
power supply current
(Read)
V
PP
power supply current
Parameter
Symbol
UnitCondition
(V
CC
=3.3V±0.3V, Ta=0 to 70°C)
Input "H" level
Input "L" level
Output "H" level
Output "L" level
Voltage is relative to Vss
I
LI
10
Typ.
-
Min. Max.
I
LO
I
CCSC
I
CCST
I
CCA
µA
10
-
µA
50
-
µA
-
CE=V
CC
1
-
CE=V
IH
30
-
mA
tc=80ns
-
-
I
PP
V
IH
V
IL
V
OH
V
OL
10
-
µA
OE/V
PP=VCC
VCC+0.5*
2.2
V
-
0.6-0.5**
V
-
-
2.4
V
I
OH
=-400µA
0.4
-
V
I
OL
=2.1mA
-
-
-
-
-
CE=V
IL,
OE/VPP=V
IH
VI=0 to Vcc
V
O
=0 to Vcc
mA
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.
Page 6
Output
MR27V801D
6/10
800ohms
100pF
2.08V
AC Characteristics 1
Address access time
CE access time
OE access time
Output disable time
Parameter
Symbol
T
ACC
Unit
-
Condition
(V
CC
=3V±0.3V, Ta=0 to 70°C)
Min. Max.
T
CE
ns
CE=OE/V
PP=VIL
-
ns
OE/V
PP=VIL
50
-
ns
CE=V
IL
300
ns
OE/V
PP=VIL
25
0
ns
-
0
ns
T
OE
T
OH
CE=V
IL
CE=OE/VPP=V
IL
Output hold time
0V/3V
0.8V/2.0V
100pF
0.8V/2.0V
Measurement conditions
Input signal level
Input timing reference level
Output load
Output timing reference level
100
100
T
CHZ
T
OHZ
Address cycle time
T
C
100
ns
-
-
AC Characteristics 2
0V/3V
0.8V/2.0V
100pF
0.8V/2.0V
Measurement conditions
Input signal level
Input timing reference level
Output load
Output timing reference level
Address access time
CE access time
OE access time
Output disable time
Parameter
Symbol
T
ACC
Unit
-
Condition
(V
CC
=3.3V±0.3V, Ta=0 to 70°C)
Min. Max.
T
CE
ns
CE=OE/V
PP=VIL
-
ns
OE/V
PP=VIL
40
-
ns
CE=V
IL
300
ns
OE/V
PP=VIL
25
0
ns
-
0
ns
T
OE
T
OH
CE=V
IL
CE=OE/VPP=V
IL
Output hold time
80
80
T
CHZ
T
OHZ
Address cycle time
T
C
80
ns
-
-
Page 7
7/10
A0 - A19
t
OH
t
CE
t
OE
t
ACC
CE
OE/V
PP
Valid Data
Hi-ZHi-Z
D0 - D7
TIMING CHART (READ CYCLE)
t
CHZ
t
OHZ
MR27V801D
t
C
PIN Capacitance
Input
OE/V
PP
Parameter
C
IN1
Unit
8 (10)
Typ.
-
(VCC=3.3V, Ta=25°C, f=1MHz)
Min. Max.
C
IN2
pF
-
V
I
=0V
60
--
Output
C
OUT
10 (12)
--
V
O
=0V
Symbol
Condition
( ) : DIP only
Page 8
0
AA
55
8/10
ELECTRICAL CHARACTERISTICS (Programming operation)
DC Characteristics
Input leakage current
V
PP
power supply current (Program)
V
CC
power supply current
Parameter
Symbol
I
LI
Unit
10
Typ.
-
Condition
(Ta=25°C
±5°C)
Min. Max.
Input "L" level
I
PP2
I
CC
V
IH
V
IL
µA
-
V
I=VCC
+0.5V
50
-
mA
-
CE=V
IL
50
-
mA
-VCC+0.5
3.0
V
-
0.8
-0.5
V
-
-
9.75
-
Voltage is relative to Vss
Input "H" level
V
OH
-
2.4
VIOH=-400µA
-
Output "H" level
V
OL
0.45
-
V
I
OL
=2.1mA
-
Output "L" level
V
PP
10.09.5
V
-
Program voltage
V
CC
power supply voltage
V
CC
4.1
3.9
V
4.0
-
MR27V801D
Pin Check Function
Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM
programmer.
Setting up address as the following condition call the preprogrammed codes on device outputs.
A0
(Vcc=3.3V
±0.3V,CE=V
IL
,OE/Vpp=V
IL
,Ta=25°C±5°C)
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
0
1
0
1
0
1
0
1
0
VH*
1
10101010
10101
0
101VH* 0
0
1010101
DATA
* :VH=8V
±0.25V
A19
1
AC Characteristics
Address set-up time
Data set-up time
Parameter
Symbol
T
AS
Unit
-
Typ.
100
Condition
Min. Max.
Data hold time
T
DS
T
AH
T
DH
ns
-
-
100
ns
--
-
2
µs
-
-
100 ns
-
-
-
Address hold time
T
CHZ
100
0
ns-
Output float delay from CE
T
VS
-
2
µs
-
V
PP
voltage set-up time
Program pulse width
T
PW
119
µs
10
-
Data valid from CE
T
CE
100
-
ns
--
-
-
-
(Vcc=4.0V
±0.1V,V
pp
=9.75V±0.25V,Ta=25°C±5°C)
ns
Address hold from CE high
T
AHC
-
0
--
VPP voltage recovery time
T
VR
-
2
µs
--
FF
Other conditions
Page 9
CE
9/10
MR27V801D
Consecutive Programming Waveforms
A0 - A19
D0 - D7
OE/V
PP
CE
Din Din
9.75V
t
AS
t
AH
t
PW
t
DS
t
DH
Consecutive Program Verify Waveforms
A0 - A19
D0 - D7
Dout
t
AHC
t
CE
t
CHZ
Dout
t
VS
OE/V
PP
t
AS
t
VR
Page 10
Bad insertion
YES
Program 10µs
Increment Address
10/10
Programming / Verify Flow Chart
MR27V801D
VCC=4.0V
VPP=9.75V
YES
PASS
NO
NG
NO
NG
PASS
Programming
Pin Check
NO
OK
NG
PASS
NG
PASS
Verify
NO
OK
Start
Start
Pin Check
Last Address ?Increment Address
Address = First location
Verify (One Byte)
Last Address ?
Verify (One Byte)
Device Passed
Device Failed
Device Passed Device Failed
Verify (One Byte)
Verify (One Byte)
Bad insertion
Address = First location
Address = First location
VCC=3.0V
VCC=3.0V
VCC=3.6V
Loading...