10 kPa On-Chip Temperature
Compensated and Calibrated
Silicon Pressure Sensors
The MPX2010 series silicon piezoresistive pressure sensors p rovide a very
accurate and linear voltage output dire ctly proportional to the applied pressu re.
These sensors house a single monolith ic silicon d ie wit h the strai n ga uge a nd
thin film resistor network integrated. The sensor is laser trimmed for precise
span, offset calibration and temperature compensation.
Pressure Range
Supply Voltage
Supply Current
Full Scale Span
(4)
Offset
Sensitivity
Linearity
Pressure Hysteresis (0 to 10 kPa)
Temperature Hysteresis (–40°C to +125°C)
Temperature Coefficient on Full Scale Span
Temperature Coefficient on Offset
Input Impedance
Output Impedance
Response Time
Warm-Up Time
Offset Stability
1. 1.0 kPa (kiloPascal) equals 0.145 psi.
2. Device is ratiometric within this specified excitation range. Operating the device at a different range may induce additional error due to device
self-heating.
3. Full Scale Span (V
minimum rated pressure.
4. Offset (V
5. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a
specified step change in pressure.
6. Offset stability is the product's output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test.
(1)
(2)
(3)
(5)
(10% to 90%)
(6)
) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the
FSS
) is defined as the output voltage at the minimum rated pressure.
OFF
P
OP
V
S
I
O
V
FSS
V
OFF
0—10kPa
—1016V
—6.0—mAdc
242526mV
–1.0—1.0mV
DC
ΔV/ΔΡ—2.5—mV/kPa
—–1.0—1.0%V
——±0.1—%V
——±0.5—%V
TCV
TCV
Z
Z
OUT
t
FSS
OFF
IN
R
–1.0—1.0%V
–1.0—1.0mV
1300—2550Ω
1400—3000Ω
—1.0—ms
——20—ms
——±0.5—%V
FSS
FSS
FSS
FSS
FSS
MPX2010
Sensors
2Freescale Semiconductor
Page 3
Maximum Ratings
Pressure
Table 2. Maximum Ratings
Maximum Pressure (P1 > P2)
Burst Pressure (P1 > P2)
Storage Temperature
Operating Temperature
1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.
(1)
RatingSymbolValueUnit
P
MAX
P
BURST
T
STG
T
A
Voltage Output versus Applied Differential Pressure
The output voltage of the differential or gauge sensor
increases with increasing pressure applied to the pressure
side (P1) relative to the vacuum side (P2). Similarly, output
voltage increases as increasing vacuum is applied to the
vacuum side (P2) relative to the pressure side (P1).
V
S
3
Sensing
Element
Figure 1. shows a block diagram of the internal circuitry on
the stand-alone pressure sensor chip.
Thin Film
Temperature
Compensation
and Calibration
Circuitry
2
+V
OUT
4
–V
OUT
75kPa
100kPa
–40 to +125°C
–40 to +125°C
1
GND
Figure 1. Temperature Compensated and Calibrated
Pressure Sensor Schematic
MPX2010
Sensors
Freescale Semiconductor3
Page 4
Pressure
On-Chip Temperature Compensation and Calibration
Figure 2. shows the output characteristics of the MPX2010
series at 25°C. The output is directly proportional to the
differential pressure and is essentially a straight line.
The effects of temperature on full scale span and offset are
very small and are shown under Operating Characteristics.
This performance over temperature is achieved by having
both the shear stress strain gauge and the thin-film resistor
circuitry on the same silicon diaphragm. Each chip is
dynamically laser trimmed for precise span and offset
calibration and temperature compensation.
Figure 3. illustrates the differential/gauge die in the basic
chip carrier (Case 344). A silicone gel isolates the die surface
and wire bonds from the environment, while allowing the
pressure signal to be transmitted to the silicon diaphragm.
The MPX2010 series pressure sensor operating
characteristics and internal reliability and qualification tests
are based on use of dry air as the pressure media. Media
other than dry air may have adverse effects on sensor
VS = 10 Vdc
30
T
= 25°C
5
0
kPa
PSI
A
P1 > P2
a
MAX
2.5
0.362
TYP
5
0.725
25
20
15
10
Output (mVdc)
–5
Figure 2. Output vs. Pressure Differential
performance and long term reliability. Contact the factory for
information regarding media compatibility in your application.
LINEARITY
Linearity refers to how well a transducer's output follows
= V
the equation: V
out
+ sensitivity x P over the operating
off
pressure range. There are two basic methods for calculating
nonlinearity: (1) end point straight line fit (see Figure 4.) or
(2) a least squares best line fit. While a least squares fit gives
the “best case” linearity error (lower numerical value), the
calculations required are burdenso me .
Conversely, an end point fit will give the “worst case” error
(often more desirable in error budget calculations) and the
calculations are more straightforward for the user.
Freescale’s specified pressure sensor linearities are based
on the end point straight line method measured at the
midrange pressure.
PRESSURE (P1)/VACUUM (P2) SIDE IDENTIFICATION TABLE
Freescale designates the two sides of the pressure sensor
as the Pressure (P1) side and the Vacuum (P2) side. The
Pressure (P1) side is the side containing silicone gel which
isolates the die from the environment. The pressure sensor is
designed to operate with positive differential pressure
applied, P1 > P2.
The Pressure (P1) side may be identified by using the
following table.
DAMBAR TRIM ZONE:
THIS IS INCLUDED
WITHIN DIM. "F" 8 PL
CC
Y
STYLE 3:
PIN 1. GND
2. -VOUT
3.VS
4. +VOUT
NOTES:
DIMENSIONING AND TOLERANCING PER ASME
1.
Y14.5M, 1994.
CONTROLLING DIMENSION: INCH.
2.
DIMENSION -A- IS INCLUSIVE OF THE MOLD
3.
STOP RING. MOLD STOP RING NOT TO EXCEED
Z
16.00 (0.630).
DIM MIN MAX MIN MAX
A 0.595 0.630 15.11 16.00
B 0.514 0.534 13.06 13.56
C 0.200 0.220 5.085.59
D 0.016 0.020 0.410.51
F 0.048 0.064 1.221.63
G0.100 BSC2.54 BSC
J 0.014 0.016 0.360.40
L 0.695 0.725 17.65 18.42
M30˚ NOM30˚ NOM
N 0.475 0.495 12.07 12.57
R 0.430 0.450 10.92 11.43
Y 0.048 0.0521.221.32
Z 0.106 0.118 2.683.00
MILLIMETERSINCHES
CASE 344-15
ISSUE AA
UNIBODY PACKAGE
SEATING
PLANE
-T-
R
-A-
U
L
H
N
PORT #1
POSITIVE
PRESSURE
(P1)
B
PIN 1
12 34
-P-
0.25 (0.010)T
M
J
C
S
Q
F
G
D 4 PL
0.13 (0.005)Q
S
M
S
S
T
NOTES:
1.2.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.
2. + OUTPUT
3. + SUPPLY
4. - OUTPUT
MILLIMETERSINCHES
DIM MIN MAX MIN MAX
A 1.145 1.175 29.08 29.85
B 0.685 0.715 17.40 18.16
-Q-
K
S
C 0.305 0.3257.758.26
D 0.016 0.0200.410.51
F 0.048 0.064 1.221.63
G0.100 BSC2.54 BSC
H 0.182 0.1944.624.93
J 0.014 0.016 0.360.41
K 0.695 0.725 17.65 18.42
L 0.290 0.300 7.377.62
N 0.420 0.440 10.67 11.18
P 0.153 0.1593.894.04
Q 0.153 0.1593.894.04
R 0.230 0.2505.846.35
S
0.220 0.2405.596.10
U0.910 BSC23.11 BSC
STYLE 1: PIN 1. GROUND
CASE 344B-01
ISSUE B
UNIBODY PACKAGE
MPX2010
Sensors
6Freescale Semiconductor
Page 7
PACKAGE DIMENSIONS
Pressure
R
PORT #2
SEATING
PLANE
-T--T-
V
PORT #1
U
W
L
H
-A-
PORT #2
N
VACUUM
(P2)
PORT #1
POSITIVE PRESSURE
(P1)
-Q-
SEATING
B
PLANE
PIN 1
-P-
M
0.25 (0.010)T
Q
J
C
0.13 (0.005)Q
M
T
12 43
K
S
S
F
G
D
4 PL
S
S
S
NOTES:
1.2.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
A 1.145 1.175 29.08 29.85
B 0.685 0.715 17.40 18.16
C 0.405 0.435 10.29 11.05
D 0.016 0.0200.410.51
F 0.048 0.0641.221.63
G0.100 BSC2.54 BSC
H 0.182 0.1944.624.93
J 0.014 0.0160.360.41
K 0.695 0.725 17.65 18.42
L 0.290 0.3007.377.62
N 0.420 0.440 10.67 11.18
P 0.153 0.1593.894.04
Q 0.153 0.1593.894.04
R 0.063 0.0831.602.11
S
0.220 0.2405.596.10
U0.910 BSC23.11 BSC
V 0.248 0.2786.307.06
W 0.310 0.3307.878.38
STYLE 1:
PIN 1. GROUND
2. + OUTPUT
3. + SUPPLY
4. - OUTPUT
MILLIMETERSINCHES
CASE 344C-01
ISSUE B
UNIBODY PACKAGE
CASE 344E-01
ISSUE B
UNIBODY PACKAGE
MPX2010
Sensors
Freescale Semiconductor7
Page 8
Pressure
PACKAGE DIMENSIONS
V
PORT #1
POSITIVE
PRESSURE
(P1)
R
-Q-
NOTES:
1.2.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
A 1.080 1.120 27.43 28.45
B 0.740 0.760 18.80 19.30
C 0.630 0.650 16.00 16.51
B
D 0.016 0.020 0.410.51
E 0.160 0.180 4.064.57
F 0.048 0.064 1.221.63
G0.100 BSC2.54 BSC
J 0.014 0.016 0.360.41
K
0.220 0.240 5.596.10
N 0.070 0.080 1.782.03
P 0.150 0.160 3.814.06
Q 0.150 0.160 3.814.06
R 0.440 0.460 11.18 11.68
S 0.695 0.725 17.65 18.42
U 0.840 0.860 21.34 21.84
V 0.182 0.194 4.624.92
STYLE 1:
PIN 1. GROUND
2. V (+) OUT
3. V SUPPLY
4. V (-) OUT
MILLIMETERSINCHES
C
E
A
U
N
-T-
-P-
0.25 (0.010)T
M
M
Q
4321
PIN 1
S
K
J
F
4 PL
D
0.13 (0.005)Q
G
M
S
P
T
S
CASE 344F-01
ISSUE B
UNIBODY PACKAGE
MPX2010
Sensors
8Freescale Semiconductor
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PACKAGE DIMENSIONS
Pressure
PAGE 1 OF 2
CASE1351-01
ISSUE A
SMALL OUTLINE PACKAGE
MPX2010
Sensors
Freescale Semiconductor9
Page 10
Pressure
PACKAGE DIMENSIONS
PAGE 2 OF 2
CASE1351-01
ISSUE A
SMALL OUTLINE PACKAGE
MPX2010
Sensors
10Freescale Semiconductor
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PACKAGE DIMENSIONS
Pressure
PAGE 1 OF 2
CASE 1369-01
ISSUE B
SMALL OUTLINE PACKAGE
MPX2010
Sensors
Freescale Semiconductor11
Page 12
Pressure
PACKAGE DIMENSIONS
PAGE 2 OF 2
CASE 1369-01
ISSUE B
SMALL OUTLINE PACKAGE
MPX2010
Sensors
12Freescale Semiconductor
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PACKAGE DIMENSIONS
Pressure
CASE 1320-02
ISSUE B
MPAK
MPX2010
Sensors
Freescale Semiconductor13
Page 14
Pressure
PACKAGE DIMENSIONS
CASE 1320-02
ISSUE A
MPAK
MPX2010
Sensors
14Freescale Semiconductor
Page 15
PACKAGE DIMENSIONS
PIN 4
PIN 1
Pressure
CASE 1320A-02
ISSUE A
MPAK
MPX2010
Sensors
Freescale Semiconductor15
Page 16
Pressure
PACKAGE DIMENSIONS
CASE 1320-02
ISSUE A
MPAK
MPX2010
Sensors
16Freescale Semiconductor
Page 17
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