Page 1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
300 Vdc
Collector–Base Voltage V
CBO
300 Vdc
Emitter–Base Voltage V
EBO
6.0 Vdc
Collector Current — Continuous I
C
500 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
1.0
8.0
Watt
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
2.5
20
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
125 °C/W
Thermal Resistance, Junction to Case
R
q
JC
50 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(IC = 1.0 mAdc, IB = 0)
V
(BR)CEO
300 — Vdc
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V
(BR)CBO
300 — Vdc
Emitter–Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
V
(BR)EBO
6.0 — Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
I
CBO
— 0.2 µAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
I
EBO
— 0.1 µAdc
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Order this document
by MPSW10/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
Page 2
MPSW10
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
h
FE
25
40
40
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = 30 mAdc, IB = 3.0 mAdc)
V
CE(sat)
— 0.75 Vdc
Base–Emitter On Voltage
(IC = 30 mAdc, VCE = 10 Vdc)
V
BE(on)
— 0.85 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
f
T
45 — MHz
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
C
cb
— 3.0 pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
200
20
1.0
h
FE
, DC CURRENT GAIN
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.6
0.4
0.3
0
0.1 101.0
TJ = 25°C
IC = 10 mA
0.2 0.5 2.0 5.0 20 30
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
V, VOLTAGE (VOLTS)
1.4
0
1.0 20
TJ = 25°C
V
BE(on)
@ VCE = 10 V
V
CE(sat)
@ IC/IB = 10
5.0 10 50 70
V
BE(sat)
@ IC/IB = 10
2.0 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficients
2.5
1.0
R
θ
VB
for V
BE
R
V
, TEMPERATURE COEFFICIENTS (mV/ C)
°
θ
2.0 3.0 5.0 7.0 10 20 50 70 100
100
30
50
70
TJ = 125°C
25°C
–55°C
VCE = 10 V
0.5
0.2
0.1
IC = 20 mA
IC = 30 mA
3.0 7.0
1.2
1.0
0.8
0.6
0.4
0.2
205.0 10 50 702.0 1003.0 7.0
1.5
2.0
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
I
C
I
B
+
10
R
θ
VC
for V
CE(sat)
25°C to 125°C
–55°C to 25°C
–55°C to 125°C
3030
30
5.0
Page 3
MPSW10
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
C, CAPACITANCE (pF)
Figure 5. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
1005020105.02.01.00.50.2
100
TJ = 25
°
C
C
eb
Figure 6. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
100
70
50
30
20
10
TJ = 25
°
C
VCE = 20 V
f = 20 MHz
f , CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
T
200
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
C
cb
1.0 205.0 10 50 702.0 1003.0 7.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
I
C
, COLLECTOR CURRENT (mA)
20 50
Figure 7. Active Region — Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
500
200
100
50
20
10
100 200 300
100 µs
1.0 ms
TA = 25°C
1 k
DUTY CYCLE ≤ 10%
1.0 s
30
Page 4
MPSW10
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
R
A
P
L
F
B
K
G
H
C
V
N
N
X X
SEATING
PLANE
1
J
SECTION X–X
D
2 3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
C 0.125 0.165 3.18 4.19
D 0.018 0.022 0.46 0.56
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.018 0.024 0.46 0.61
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.135 ––– 3.43 –––
V 0.135 ––– 3.43 –––
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MPSW10/D
*MPSW10/D*
◊
CASE 029–05
(TO–226AE)
ISSUE AD
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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