Datasheet MPSL01 Datasheet (Motorola)

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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NPN Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

120 Vdc

Collector–Base Voltage V

CBO

140 Vdc

Emitter–Base Voltage V

EBO

5.0 Vdc

Collector Current — Continuous I

C

150 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

1.5
12

Watts

mW/°C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction to Case

R

q

JC

83.3 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(1)

(IC = 1.0 mAdc, IB = 0)

V

(BR)CEO

120 — Vdc

Collector–Base Breakdown Voltage

(IC = 100 µAdc, IE = 0 )

V

(BR)CBO

140 — Vdc

Emitter–Base Breakdown Voltage

(IE = 10 µAdc, IC = 0)

V

(BR)EBO

5.0 — Vdc

Collector Cutoff Current

(VCB = 75 Vdc, IE = 0)

I

CBO

— 1.0 µAdc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

I

EBO

— 100 nAdc

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

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SEMICONDUCTOR TECHNICAL DATA

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CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

 Motorola, Inc. 1996

COLLECTOR

3

2

BASE

1

EMITTER

MPSL01

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(1)

(IC = 10 mAdc, VCE = 5.0 Vdc)

h

FE

50 300 —

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

V

CE(sat)

—
—

0.20

0.30

Vdc

Base–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

(1)

V

BE(sat)

—
—

1.2

1.4

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(1)

(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)

f

T

60 — MHz

Collector–Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

C

cb

— 8.0 pF

Small–Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

h

fe

30 — —

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

MPSL01

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

500

h , DC CURRENT GAIN

FE

TJ = 125°C

–55°C

25°C

5.0

10

0.1 0.2 0.3 0.5 0.7 1.0

2.0

3.0

5.0 7.0 10 20 30 50 70 100

200

30
20

300

100

50

7.0

VCE = 1.0 V
VCE = 5.0 V

Figure 2. Collector Saturation Region

IB, BASE CURRENT (mA)

1.0

IC = 1.0 mA

0

0.3

0.005 0.01 0.2 0.5 1.0

2.0 20 50

0.8

0.5

0.4

0.9

0.7

0.6

0.2

0.02 0.05 0.1

10

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1

10 mA

30 mA

100 mA

5.0

MPSL01

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 3. Collector Cut–Off Region

IC, COLLECTOR CURRENT (mA)

1.0

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20 50

2.5

100

TJ = 25°C

V

BE(sat)

@ IC/IB = 10

V

CE(sat)

@ IC/IB = 10

q

VC

for V

CE(sat)

q

VB

for V

BE(sat)

0.1 0.2 0.5

Figure 4. “On” Voltages

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10

1

10

–5

Figure 5. Temperature Coefficients

TJ = –55°C to +135°C

0.4 0.3 0.1

0.8

0.6

0.4

0.2

0

10

0

10

–1

10

–2

10

–3

10

–4

0.2 0 0.1 0.2 0.40.3 0.60.5

VCE = 30 V

TJ = 125°C

75°C

25°C

IC = I

CES

, COLLECTOR CURRENT ( A)

µ

I

C

V

, TEMPERATURE COEFFICIENT (mV/ C)

°θ

3.0 30

2.0

1.5

1.0

0.5
0

–0.5
–1.0
–1.5
–2.0
–2.5

C, CAPACITANCE (pF)

Figure 6. Switching Time Test Circuit

VR, REVERSE VOLTAGE (VOLTS)

100

1.0

0.2 0.5 1.0 2.0 5.0 10 20

C

ibo

70
50

30
20

10

7.0

5.0

3.0

2.0

0.3 0.7 3.0 7.0

C

obo

Figure 7. Capacitances

REVERSE FORWARD

0.3 1.0 2.0 5.0 10 20 50 1000.1 0.2 0.5 3.0 300.3

10.2 V
V

in

10 µs

INPUT PULSE

V

BB

–8.8 V
100

R

B

5.1 k

0.25

µ

F

V

in

100

1N914

V

out

R

C

V

CC

30 V

3.0 k

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

Values Shown are for IC @ 10 mA

TJ = 25°C

MPSL01

5

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 8. Turn–On Time

IC, COLLECTOR CURRENT (mA)

1000

Figure 9. Turn–Off Time

IC, COLLECTOR CURRENT (mA)

0.3 1.0 10

20 30 50

5000

0.50.2

t, TIME (ns)

t, TIME (ns)

10

20

30

50

100

200

300

500

2.0

100 200

IC/IB = 10
TJ = 25

°

C

tr @ VCC = 120 V

50

100

200

300

500

3.0 5.0

tr @ VCC = 30 V

td @ V

EB(off)

= 1.0 V

VCC = 120 V

3000
2000

1000

0.3 1.0 10

20 30 50

0.50.2 2.0

100 200

3.0 5.0

IC/IB = 10
TJ = 25

°

C

tf @ VCC = 120 V

tf @ VCC = 30 V

ts @ VCC = 120 V

MPSL01

6

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

R

A

P

J

L

F

B

K

G

H

SECTION X–X

C

V

D

N

N

X X

SEATING
PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––

1

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

CASE 029–04

(TO–226AA)

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MPSL01/D

*MPSL01/D*

◊

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.