Page 1
MPSH17
s
l
l
Preferred Device
CATV Transistor
NPN Silicon
Features
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector− Emitter Voltage V
Collector− Base Voltage V
Emitter− Base Voltage V
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
CEO
CBO
EBO
P
TJ, T
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
(Printed Circuit Board Mounting)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
R
q
JA
15 Vdc
20 Vdc
3.0 Vdc
350
2.81
−55 to +150 °C
357 °C/W
mW
mW/°C
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COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
MPS
H17
TO−92
1
2
3
CASE 29−11
STYLE 2
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MPSH17 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
MPSH17 TO−92 5,000 Units/Box
MPSH17G TO−92
(Pb−Free)
MPSH17RLRA TO−92 2,000/Tape & Ree
MPSH17RLRAG TO−92
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
5,000 Units/Box
2,000/Tape & Ree
†
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1 Publication Order Number:
MPSH17/D
Page 2
MPSH17
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector− Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector− Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter− Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 W, f = 200 MHz)
FUNCTIONAL TEST
Amplifier Power Gain
(IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 W, f = 200 MHz)
= 25°C unless otherwise noted)
A
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
V
CE(sat)
f
C
h
FE
T
cb
fe
15 − − Vdc
20 − − Vdc
3.0 − − Vdc
− − 100 nAdc
25 − 250 −
− − 0.5 −
800 − − MHz
0.3 − 0.9 pF
30 − − −
NF − − 6.0 dB
G
pe
− 24 − dB
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2
Page 3
MPSH17
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
SEATING
PLANE
A
B
R
P
L
K
XX
H
V
1
G
C
N
D
J
SECTION X−X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
MILLIMETERSINCHES
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MPSH17/D
3
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