Page 1
2003. 12. 9 1/2
SEMICONDUCTOR
TECHNICAL DATA
MPSA94A
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
HIGH VOLTAGE APPLICATION.
FEATURES
High Breakdown Voltage.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
*Pulse Test : Pulse Width 300 S, Duty Cycle 2%
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-100 A, IE=0
-480 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-1mA, IB=0
-480 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CES
IC=-100 A, IB=0
-480 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-10 A, IC=0
-6.0 - - V
Collector Cut off Current
I
CBO
VCB=-400V, IE=0
- - -100 nA
Collector Cut off Current
I
CES
VCE=-480V, IB=0
- - -1
A
Emitter Cutoff Current
I
EBO
VEB=-4V, IC=0
- - -100 nA
DC Current Gain *
h
FE
VCE=-10V, IC=-1mA
40 - -
VCE=-10V, IC=-10mA
50 - 300
VCE=-10V, IC=-50mA
45 - -
VCE=-10V, IC=-100mA
40 - -
Collector-Emitter Saturation Voltage *
V
CE(sat)
1 IC=-1mA, IB=-0.1mA
- - -0.35
V
V
CE(sat)
2 IC=-20mA, IB=-2mA
- - -0.5
V
CE(sat)
3 IC=-50mA, IB=-5mA
- - -0.75
Base-Emitter Saturation Voltage *
V
BE(sat)
IC=-10mA, IB=-1mA
- - -0.75 V
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-480 V
Collector-Emitter Voltage
V
CEO
-480 V
Emitter-Base Voltage
V
EBO
-6 V
Collector Current
I
C
-300 mA
Collector Power Dissipation
P
C
625 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
B
K
D
F
1 2
L
E
G
H
F
C
3
M
AJ
1. EMITTER
2. BASE
3. COLLECTOR
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
_
J
K
L
+
14.00 0.50
0.55 MAX
2.30
0.45 MAXM
1.00N
TO-92
Page 2
2003. 12. 9 2/2
MPSA94A
Revision No : 0
h - I
FE C
1K
300
FE
100
30
10
DC CURRENT GAIN h
3
1
-1 -3 -10 -30
COLLECTOR CURRENT I (mA)
V - I
CE(sat)
100K
30K
10K
CE(sat)
3K
1K
300
100
30
10
SATURATION VOLTAGE V (mV)
13
10
30C100
COLLECTOR CURRENT I (mA)
V =-10V
CE
-100 -300 -1k
C
C
I =10I
B
C
1K
300
V - I
BE(sat)
10K
3K
BE(sat)
1K
300
100
SATURATION VOLTAGE V (mV)
13
COLLECTOR CURRENT I (mA)
C - V
ob CB
100
30
10
ob(pF)
C
3
COLLECTOR OUTPUT CAPACITANCE
1
0.1 1013
0.3
COLLECTOR BASE VOLTAGE V (V)
C
I =10I
B
C
3003010 100
C
CB
f=1MHz
I =0
E
30
1K
100
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