Page 1
UTC MPSA92M PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
*Collector-Emitter voltage:
V
*Collector Dissipation:
Pc(max)=625mW
*Low collector-Emitter saturation voltage
APPLICATIONS
*Telephone switching
*High voltage switch
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector dissipation(Ta=25°C) Pc 625 mW
Collector current Ic -800 mA
Junction Temperature T
Storage Temperature T
ELECTRICAL CHARACTERISTICS
Collector-base breakdown voltage BV
Collector-emitter breakdown voltage BV
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage BV
Collector-emitter saturation voltage VCE(sat) Ic=-30mA,IB=-1mA
Base-emitter saturation voltage VBE(sat) Ic=-10mA,IB=-1mA -0.75 V
Note:Pulse test:PW<300µs,Duty Cycle<2%
=-300V
CEO
1
TO-92
1:EMITTER 2:BASE 3:COLLECTOR
( Operating temperature range applies unless otherwise specified )
PARAMETER SYMBOL RATING UNIT
CBO
CEO
EBO
j
STG
(Tj=25°C,unless otherwise specified)
-300 V
-300 V
-6 V
150 °C
-55 ~ +150 °C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
CBO
CEO
CES
EBO
Collector cut-off current I
Collector cut-off current I
Emitter cut-off current I
DC current gain(note) h
Output capacitance Cob VCB=-20V,IE=0, f=1MHz 8 pF
CBO
CES
EBO
FE
Ic=-100µA,IE=0 -300 V
Ic=-1mA,IB=0 -300 V
Ic=-100µA,VBE=0 -300 V
IE=-100µA,Ic=0 -5 V
VCB=-300V,IE=0 -100 nA
VCB=-300V,VBE=0 -1 µA
VEB=-4V,Ic=0 100 nA
VCE=-10V,Ic=-1mA
VCE=-10V,Ic=-10mA
VCE=-10V,Ic=-100mA
VCE=-10V,Ic=-200mA
Ic=-100mA,IB=-10mA
60
80
80
40
300
-0.20
-0.7
V
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
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UTC MPSA92M PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL PARAMETERS PERFORMANCE
Fig.2 Base-emitter
saturation voltage
1000
Fig.1 Dc current gain
-10
VCE=-10V
100
10
HFE,DC current Gain
1
-1 -10 -100 -1000
Ic,Collector current(mA)
Fig.3 Collector-emitter
saturation voltage
-10
-1.0
VCE(sat) (V)
-0.1
-0.01
-1 -10 -100
Ic,Collector current(mA)
Ic=10*IB
-1.0
(sat) (V)
-0.1
BE
V
-0.01
-1 -10 -100 -1000
Ic,Collector current(mA)
Ic=10*IB
Fig.4 Collector Output
capacitance
1000
IE=0,f=1MHz
100
10
Collector Output capacitance(pF)
1
Collector base voltage(V)
-100-10-1-0.1
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
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