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T
DATA SHEE
MPSA75
MPSA76
MPSA77
PNP DARLINGTON TRANSISTOR
TO-92 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR MPSA75 series are silicon PNP Darlington Transistors, manufactured by the
epitaxial planar process, designed for applications requiring extremely high gain.
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current I
C
Power Dissipation P
MPSA75 MPSA76 MPSA77 UNITS
40 50 60 V
CES
40 50 60 V
CBO
EBO
10
V
500
625 mW
D
mA
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance
Θ
-55 to +150 °C
stg
200 °C/W
JA
ELECTRICAL CHARACTERISTICS (TA=25°C)
MPSA75
SYMBOL
I
CES
I
CES
I
CES
I
CBO
I
CBO
I
CBO
I
EBO
BV
BV
V
CE(SAT)
V
BE(ON)
TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
VCE=30V 500 nA
VCE=40V 500 nA
VCE=50V 500 nA
VCB=30V 100 nA
VCB=40V 100 nA
VCB=50V 100 nA
VEB=10V 100 100 100 nA
I
CES
I
CBO
=100µA 40 50 60 V
C
=100µA 40 50 60 V
C
IC=100mA, IB=0.1mA 1.5 1.5 1.5 V
VCE=5.0V, IC=100mA 2.0 2.0 2.0 V
MPSA76 MPSA77
hFE VCE=5.0V, IC=10mA 10K 10K 10K
hFE VCE=5.0V, IC=100mA 10K 10K 10K
fT VCE=5.0V, IC=10mA 125 125 125 MHz
(SEE REVERSE SIDE)
R0
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MPSA75 / MPSA76 / MPSA77 PNP DARLINGTON TRANSISTOR
TO-92 PACKAGE - MECHANICAL OUTLINE
A
G
B
H
1 2 3
D
C
E
F
DIMENSIONS
INCHES MILLIMETERS
SYMBOL
A (DIA) 0.175 0.205 4.45 5.21
B 0.170 0.210 4.32 5.33
C 0.500 - 12.70 D 0.016 0.022 0.41 0.56
E
F
G 0.125 0.165 3.18 4.19
H 0.080 0.105 2.03 2.67
I
Lead Code: 1) Emitter
MIN MAX MIN MAX
0.100 2.54
0.050 1.27
0.015 0.38
TO-92 (REV: R1)
2) Base
3) Collector
I
R1
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