Datasheet MPSA70, MPSA70RLRM Datasheet (Motorola)

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 

PNP Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

–40 Vdc

Emitter–Base Voltage V

EBO

–4.0 Vdc

Collector Current — Continuous I

C

–100 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

1.5
12

Watts

mW/°C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction to Case

R

q

JC

83.3 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(1)

(IC = –1.0 mAdc, IB = 0)

V

(BR)CEO

–40 — Vdc

Emitter–Base Breakdown Voltage

(IE = –100 µAdc, IC = 0)

V

(BR)EBO

–4.0 — Vdc

Collector Cutoff Current

(VCB = –30 Vdc, IE = 0)

I

CBO

— –100 nAdc

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

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SEMICONDUCTOR TECHNICAL DATA

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CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

 Motorola, Inc. 1996

COLLECTOR

3

2

BASE

1

EMITTER

MPSA70

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –5.0 mAdc, VCE = –10 Vdc)

h

FE

40 400 —

Collector–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

V

CE(sat)

— –0.25 Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz)

f

T

125 — MHz

Output Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

C

obo

— 4.0 pF

MPSA70

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL NOISE CHARACTERISTICS

(VCE = –ā5.0 Vdc, TA = 25°C)

Figure 1. Noise Voltage

f, FREQUENCY (Hz)

5.0

7.0

10

3.0

Figure 2. Noise Current

f, FREQUENCY (Hz)

1.0
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

1.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.1

BANDWIDTH = 1.0 Hz

RS

≈

0

IC = 10 µA

100 µA

e

n

, NOISE VOLTAGE (nV)

I

n

, NOISE CURRENT (pA)

30 µA

BANDWIDTH = 1.0 Hz

RS

≈ ∞

IC = 1.0 mA

300 µA

100 µA

30 µA

10 µA

10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

2.0

1.0 mA

0.2

300 µA

NOISE FIGURE CONTOURS

(VCE = –ā5.0 Vdc, TA = 25°C)

500 k

100

200

500

1.0 k

10 k

5.0 k

20 k

50 k

100 k

200 k

2.0 k

1.0 M

500 k

100

200

500

1.0 k

10 k

5.0 k

20 k

50 k

100 k

200 k

2.0 k

1.0 M

Figure 3. Narrow Band, 100 Hz

IC, COLLECTOR CURRENT (µA)

Figure 4. Narrow Band, 1.0 kHz

IC, COLLECTOR CURRENT (µA)

10

0.5 dB

BANDWIDTH = 1.0 Hz

R

S

, SOURCE RESISTANCE (OHMS)

R

S

, SOURCE RESISTANCE (OHMS)

Figure 5. Wideband

IC, COLLECTOR CURRENT (µA)

10

10 Hz to 15.7 kHz

R

S

, SOURCE RESISTANCE (OHMS)

Noise Figure is Defined as:

NF+20 log

10

ƪ

e

n

2

)

4KTRS)

I

n

2

R

S

2

4KTR

S

ƫ

1ń2

= Noise Voltage of the T ransistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10

–23

j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)

e

n

I

n

K
T
R

S

1.0 dB

2.0 dB

3.0 dB

20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k

500 k

100

200

500

1.0 k

10 k

5.0 k

20 k

50 k

100 k

200 k

2.0 k

1.0 M

20 30 50 70 100 200 300 500 700 1.0 k

BANDWIDTH = 1.0 Hz

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

MPSA70

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 6. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

0.003

h , DC CURRENT GAIN

FE

TJ = 125°C

–55°C

25°C

VCE = 1.0 V
VCE = 10 V

Figure 7. Collector Saturation Region

IC, COLLECTOR CURRENT (mA)

1.4

Figure 8. Collector Characteristics

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20

50

1.6

100

TJ = 25°C

V

BE(sat)

@ IC/IB = 10

V

CE(sat)

@ IC/IB = 10

V

BE(on)

@ VCE = 1.0 V

*

q

VC

for V

CE(sat)

q

VB

for V

BE

0.1 0.2 0.5

MPSA70

Figure 9. “On” Voltages

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.002

TA = 25°C

MPSA70

IC = 1.0 mA 10 mA 100 mA

Figure 10. Temperature Coefficients

50 mA

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

40

60

80

100

20

0

0

I

C

, COLLECTOR CURRENT (mA)

TA = 25°C

PULSE WIDTH = 300

µ

s

DUTY CYCLE

≤

2.0%

IB = 400 µA

350 µA

300 µA

250 µA

200 µA

*APPLIES for IC/IB ≤ hFE/2

25°C to 125°C

–55°C to 25°C

25°C to 125°C

–55°C to 25°C

40

60

0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0

2.0

3.0

5.0 7.0 10 20 30 50 70 100

0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40

1.2

1.0

0.8

0.6

0.4

0.2
0

2.4

0.8

0

1.6

0.8

1.0 2.0 5.0 10 20

50

100

0.1 0.2 0.5

200

100

80

V

, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

150 µA

100 µA

50 µA

MPSA70

5

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL DYNAMIC CHARACTERISTICS

C, CAPACITANCE (pF)

Figure 11. Turn–On Time

IC, COLLECTOR CURRENT (mA)

500

Figure 12. Turn–Off Time

IC, COLLECTOR CURRENT (mA)

2.0 5.0 10

20 30 50

1000

Figure 13. Current–Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

Figure 14. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 16. Output Admittance

IC, COLLECTOR CURRENT (mA)

3.01.0

500

0.5

10

t, TIME (ns)

t, TIME (ns)

f , CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

T

h , OUTPUT ADMITTANCE ( mhos)

oe

m

h

ie

, INPUT IMPEDANCE (k )

Ω

5.0

7.0

10

20

30

50

70

100

300

7.0

70 100

VCC = 3.0 V
IC/IB = 10
TJ = 25°C

td @ V

BE(off)

= 0.5 V

t

r

10

20

30

50

70

100

200

300

500

700

–

ā

2.0

–1.0

VCC = –ā3.0 V
IC/IB = 10
IB1 = I

B2

TJ = 25

°

C

t

s

t

f

50

70

100

200

300

0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

TJ = 25°C

VCE = 20 V

5.0 V

1.0

2.0

3.0

5.0

7.0

0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05

C

ib

C

ob

2.0 5.0 10

20 50

1.0

0.2
100

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

0.1 0.2 0.5

VCE = –10 Vdc
f = 1.0 kHz
TA = 25°C

2.0 5.0 10

20 50

1.0

2.0
100

3.0

5.0

7.0

10

20

30

50

70

100

200

0.1 0.2 0.5

VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C

200

–ā3.0

–

ā

5.0 –ā7.0

–

ā

20

–10

–ā30

–

ā

50 –ā70

–100

TJ = 25°C

MPSA70

hfe

≈

200

@ IC = –1.0 mA

MPSA70

hfe

≈

200

@ IC = 1.0 mA

MPSA70

6

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 17. Thermal Response

t, TIME (ms)

1.0

0.01

r(t) TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k

50 k

100 k

D = 0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

DUTY CYCLE, D = t1/t

2

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
Z

θ

JA(t)

= r(t)

•

R

θ

JA

T

J(pk)

– TA = P

(pk)

Z

θ

JA(t)

t

1

t

2

P

(pk)

FIGURE 19

Figure 18. Active–Region Safe Operating Area

TJ, JUNCTION TEMPERATURE (°C)

10

4

–4

0

I

C

, COLLECTOR CURRENT (nA)

Figure 19. Typical Collector Leakage Current

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

400

2.0

I

C

, COLLECTOR CURRENT (mA)

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.

To find Z

θJA(t)

, multiply the value obtained from Figure 17 by the

steady state value R

θJA

.

Example:
Dissipating 2.0 watts peak under the following conditions:

t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.

The peak rise in junction temperature is therefore

∆T = r(t) x P

(pk)

x R

θJA

= 0.22 x 2.0 x 200 = 88°C.

For more information, see AN–569.

The safe operating area curves indicate IC–VCE limits of t he
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.

The data of Figure 18 is based upon T

J(pk)

= 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided T

J(pk)

≤ 150°C. T

J(pk)

may be calculated from
the data in Figure 17. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.

10

–2

10

–1

10

0

10

1

10

2

10

3

–200 +20 +40 + 60 +80 +100 +120 +140 +160

VCC = 30 V

I

CEO

I

CBO

AND

I

CEX

@ V

BE(off)

= 3.0 V

TA = 25°C

CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT

1.0 ms

10 µs

TC = 25°C

1.0 s

dc

dc

4.0

6.0

10

20

40

60

100

200

4.0 6.0 8.0 10 20

40

TJ = 150°C

100 µs

MPSA70

7

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

R

A

P

J

L

F

B

K

G

H

SECTION X–X

C

V

D

N

N

X X

SEATING
PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––

1

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

CASE 029–04

(TO–226AA)

ISSUE AD

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

MPSA70

8

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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MPSA70/D

*MPSA70/D*

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