Page 1
1999. 11. 30 1/2
SEMICONDUCTOR
TECHNICAL DATA
MPSA62/63/64
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
DARLINGTON TRANSISTOR.
FEATURES
·Complementary to MPSA13/14.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base
Voltage
MPSA62
V
CBO
-20
V
MPSA63/64 -30
Collector-Emitter
Voltage
MPSA62
V
CES
-20
V
MPSA63/64 -30
Emitter-Base Voltage
V
EBO
-10 V
Collector Current
I
C
-500 mA
Collector Power Dissipation
P
C
625 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter
Breakdown Voltage
MPSA62
V
(BR)CES
IC=-0.1mA, IB=0
-20 - V
MPSA63/64 -30 - -
Collector Cut-off
Current
MPSA62
I
CBO
VCB=-15V, IE=0
- - -0.1
μA
MPSA63/64
V
CB
=-30V, IE=0
Emitter Cut-off Current
I
EBO
VEB=-10V, IC=0
- - -0.1
μA
DC Current Gain
MPSA62
h
FE
IC=-10mA, VCE=-5V
20,000 - -
MPSA63 5,000 - -
MPSA64 10,000 - -
MPSA63
I
C
=-100mA, VCE=-5V
10,000 - -
MPSA64 20,000 - -
Collector-Emitter
Saturation Voltage
MPSA62
V
CE(sat)
IC=-10mA, IB=-0.01mA
- - -1.0
V
MPSA63/64
I
C
=-100mA, IB=-0.1mA
- - -1.5
Base Emitter Voltage
MPSA62
V
BE
IC=-10mA, VCE=-5V
- - -1.4
V
MPSA63/64
I
C
=-100mA, VCE=-5V
- - -2.0
Current Gain
Bandwith Product
MPSA63/64
f
T
IC=-10mA, f=100MHz, VCE=-5V
125 - - MHz
*Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%
B
K
D
F
1 2
L
E
G
H
F
C
3
M
AJ
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
_
J
K
L
+
14.00 0.50
0.55 MAX
2.30
0.45 MAXM
1.00N
Page 2
1999. 11. 30 2/2
MPSA62/63/64
Revision No : 3
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