Page 1
MPSA55
MPSA56
Driver PNP Transistors
ABSOLUTE MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Total Device Dissipation T =25 C
Junction Temperature
Storage, Temperature
A
(Ta=25 C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
j
Tstg
1. EMITTER
2. BASE
3. COLLECTOR
-60
-60
-55 to +150
TO-92
-4.0
-500
0.625
150
1
2
3
MPSA56MPSA55
-80
-80
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0)
MPSA55
MPSA56
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
MPSA55
MPSA56
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0)
Collector Cutoff Current
(VCE= 50 Vdc, I =0)
(VCE= 60 Vdc, I =0)
Collector Cutoff Current
(VCE= -60 Vdc, I =0)
(VCE= -80 Vdc, I =0)
Emitter Cutoff Current (VEB= -3.0V c, I =0)
B
B
B
B
MPSA55
MPSA56
MPSA55
MPSA56
d
C
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CE0
I
CBO
I
EBO
-60
-80
-60
-80
-4.0
-
-
-
-
-
-
-0.1
-0.1
-0.1
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
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Page 2
MPSA55
MPSA56
ELECTRICAL CHARACTERISTICS (T
Characteristics
ON CHARACTERISTICS
DC Current Gain
(IC= -100 mAdc, V
CE=1.0 Vdc
Collector-Emitter Saturation Voltage
(IC= -100 mAdc, IB= -10 mAdc)
Base-Emitter Saturation Voltage
(IC= -100 mAdc, IB= -10 mAdc)
Current-Gain-Bandwidth Product
(IC= -10 mAdc, VCE= -2.0 Vdc, f=100 MHz)
)
=25 C unless otherwise noted) (Countinued)
A
Symbol
(1)
h
FE
V
CE(sat)
V
BE(sat)
f
T
100 -
-
-
100
TYP
-
-
-
-
Max
-0.25
-1.2
-
UnitMin
-
Vdc
Vdc
MHz
200
VCE = -2.0 V
= 25 C
T
J
100
70
50
30
20
, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
-2.0 -3.0 -5.0 -7.0 -20 -30 -50 -70
f
IC, COLLECTOR CURRENT (mA)
F IG 1. C urrent-G ain Ð Band width P roduc t
100
70
50
30
20
C, CAPACITANCE (pF)
10
7.0
-100 -200-10
5.0
-0.2 -0.5 -5.0 -10 -20 -50
-1.0 -100-0.1
-2.0
VR, REVERSE VOL TAGE (VOLTS)
TJ = 25 C
C
obo
F IG 2. C apa c itanc e
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Page 3
MPSA55
MPSA56
400
TJ = 125 C
200
100
80
, DC CURRENT GAIN
FE
h
60
40
-1.0
25 C
-55 C
-2.0 -500-0.5
-10
-5.0
, COLLECTOR CURRENT (mA)
I
C
-20 -100-50 -200
VCE = -1.0 V
F IG 3. DC C ur ren t Gain
-1.0
TJ = 25 C
-1.0
TJ = 25 C
-0.8
-0.6
-0.4
V, VOLTAGE (VOLTS)
-0.2
V
CE(sat)
0
-0.5 -2.0 -5.0 -200-20 -50
V
@ IC/IB = 10
BE(sat)
V
@ VCE = -1.0 V
BE(on)
@ IC/IB = 10
-10 -500-1.0
, COLLECTOR CURRENT (mA)
I
C
F IG 4. " O N " V olta ges
-0.8
-100
-0.8
-0.6
-0.4
-0.2
, COLLECTOR-EMITTER VOLTAGE (VOLTS)V
CE
0
IC =
-50 mA
IC =
-10 mA
-0.1 -10-0.05
IC =
-100 mA
-1.0
, BASE CURRENT (mA)
I
B
IC =
-250 mA
IC =
-500 mA
-20-2.0 -5.0-0.2 -0.5
-50
F IG 5. C ollec tor S aturation R egi on
-1.2
-1.6
R
for V
VB
-2.0
-2.4
, TEMPERATURE COEFFICIENT (mV/ C)
VB
R
-2.8
-1.0 -2.0 -5.0 -20 -50 -200
BE
-10
IC, COLLECTOR CURRENT (mA)
-100 -500-0.5
F IG 6. B as e-E mitter Tempera ture
C oefficie nt
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Page 4
MPSA55
MPSA56
TO-92 Outline Dimensions unit:mm
E
H
C
L
J
K
G
B
A
D
Dim
A
B
C
D
E
G
H
J
K
L
Min
3.30
1.10
0.38
0.36
4.40
3.43
4.30
2.44
14.10
Max
3.70
1.40
0.55
0.51
4.70
-
4.70
1.270TYP
2.64
14.50
TO-92
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