Datasheet mpsa44_mpsa45-utc Datasheet

UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR

FEATURES

*Collector-Emitter voltage: V V *Collector current up to 300mA *Complement to MPSA94/93 *Collector Dissipation: Pc(max)=625mW

APPLICATION

*Telephone switching *High voltage switch

=400V(MPSA44)

CEO

=350V(MPSA45)

CEO

1

1:EMITTER 2:BASE 3:COLLECTOR

TO-92

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATING UNIT

Collector-base voltage MPSA44 MPSA45 Collector-emitter voltage MPSA44 MPSA45 Emitter-base voltage V Collector dissipation(Ta=25°C

Collector dissipation(Tc=25°C Collector current Ic 300 mA Junction Temperature T Storage Temperature T

) )

ELECTRICAL CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage BV

MPSA44 MPSA45

( Operating temperature range applies unless otherwise specified )

V

CBO

V

CEO

EBO

Pc 625 mW Pc 1.5 W

j

STG

(Tj=25°C,unless otherwise specified)

BV

CBO

CEO

EBO

Ic=100µA,IB=0

Ic=1mA,IB=0

IE=100µA,Ic=0 6 V

500 400

400 350

6 V

150 °C

-55 ~ +150 °C

500 400

400 350

V

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UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR

(continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Collector cut-off current

MPSA44 MPSA45

Collector cut-off current

MPSA44

MPSA45 Emitter cut-off current I DC current gain(note) h

Collector-emitter saturation voltage VCE(sat) Ic=1mA,IB=0.1mA

Base-emitter saturation voltage VBE(sat) Ic=10mA,IB=1mA 0.75 V

Current gain bandwidth product f

Output capacitance Cob VCB=20V,IE=0

Note:Pulse test:PW<300µs,Duty Cycle<2%

I

CBO

I

CES

EBO

VCB=400V,IE=0 VCB=320V,IE=0

VEB=4V,Ic=0 0.1 µA

FE

T

VCE=10V,Ic=1mA VCE=10V,Ic=10mA VCE=10V,Ic=50mA

VCE=10V,Ic=100mA

Ic=10mA,IB=1mA

Ic=50mA,IB=5mA

VCE=20V,Ic=10mA,

f=100MHz

f=1MHz

40 50 45 40

50 MHz

1 1

240

0.4

0.5

0.75

7 pF

µA

V

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UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR

TYPICAL CHARACTERISTIC CURVES

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UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR

Fig.1 DC current gain

140 120 100

80

60

40 20

0

-20

HFE,DC current current gain

-40 0

10110210310

10

Ic,Collector current(mA)

VCE=10V

4

Fig.2 Turn-on switching times

1

10

0

10

Time(µs)

-1

10

0

10

Ic,Collector current(mA)

VCE=150V Ic/IB=10 Ta=25¢XC VBE(OFF)=4V

T

d

1

Fig.3 Turn-off switching times

2

10

1

10

Time(µs)

0

f

T

10

-1

10

2

10

0

10

Ic,Collector current(mA)

VCE=150V Ic/IB=10 Ta=25¢XC

1

10

T

s

T

f

2

10

Fig.4 Capacitance Fig.5 ON Voltage

3

10

2

10

1

10

Capacitance(pF)

0

10

-1

10

2

10

1

10

0

10

Small signal current gain,HFE

-1

10

-1

10

Cib

Cob

0

10110210

10

Collector voltage(V)

Fig.7 High Frequency

current gain

VCE=10V f=10MHz Ta=25¢XC

0

10110210

10

Ic,Collector current(mA) Collector voltage(V)

1.0

0.8

0.6

0.4

voltage(V)

0.2

0

3

4

10

3

10

2

10

1

10

Ic,Collector current(mA)

0

10

3

10

Ta=25¢XC

VCE(sat),Ic/IB=10

-1

10

Ic,Collector current(mA)

Fig.8 Safe operating area

Ta=25

0

VBE(sat),Ic/IB=10

VBE(ON),VCE=10V

0

10110210

10

1ms

1s

Tc=25

¢X

C

¢X

C

MPSA44

1

10210310

10

Valid Duty

Cycle<10%

0.1ms

Fig.6 Collector saturation region

0.5

0.4

Ic=1mA

0.3

0.2

0.1

Collector-Emitter voltage(V)

Ta=25¢XC

0

3

10110210310410

4

Ic=10mA

Ic=50mA

Ib, base current(µA)

5

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