Page 1
1997. 10. 21 1/3
SEMICONDUCTOR
TECHNICAL DATA
MPSA44/45
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH VOLTAGE APPLICATION.
FEATURES
High Breakdown Voltage.
Collector Power Dissipation : PC=625mW.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base
Voltage
MPSA44
V
CBO
500
V
MPSA45 400
Collector-Emitter
Voltage
MPSA44
V
CEO
400
V
MPSA45 350
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
300 mA
Collector Power Dissipation
P
C
625 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base
Breakdown Voltage
MPSA44
V
(BR)CBO
IC=100 A, IE=0
500
- - V
MPSA45 400
Collector-Emitter
Breakdown Voltage (1)
MPSA44
V
(BR)CEO
IC=1mA, IB=0
400
- - V
MPSA45 350
Collector-Emitter Breakdown Voltage (2)
V
(BR)CES
IC=100 A, IB=0
400 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
6.0 - - V
Collector Cut off Current
MPSA44
I
CBO
VCB=400V, IE=0
- -
100
nA
MPSA45
VCB=320V, IE=0
100
Collector Cut off Current
MPSA44
I
CES
VCE=400V, IB=0
- -
500
nA
MPSA45
VCE=320V, IB=0
500
Emitter Cutoff Current
I
EBO
VEB=4V, IC=0
- - 100 nA
DC Current Gain *
h
FE
VCE=10V, IC=1mA
40 - -
VCE=10V, IC=10mA
50 - 200
VCE=10V, IC=50mA
45 - -
VCE=10V, IC=100mA
40 - -
Collector-Emitter Saturation Voltage *
V
CE(sat)
IC=10mA, IB=1mA
- - 0.5 V
Base-Emitter Saturation Voltage *
V
BE(sat)
IC=10mA, IB=1mA
- - 0.75 V
B
K
D
F
1 2
L
E
G
H
F
C
3
M
AJ
1. EMITTER
2. BASE
3. COLLECTOR
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
_
J
K
L
+
14.00 0.50
0.55 MAX
2.30
0.45 MAXM
1.00N
TO-92
Page 2
1999. 11. 30 2/3
MPSA44/45
Revision No : 3
Page 3
1997. 10. 21 3/3
MPSA44/45
Revision No : 2
Loading...