Datasheet mpsa44-d Datasheet

Page 1
MPSA44
)
e
Preferred Device
High Voltage Transistor
NPN Silicon
• Pb−Free Packages are Available*
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MAXIMUM RATINGS
Rating Symbol Value Unit
Collector− Emitter Voltage V Collector− Base Voltage V Emitter− Base Voltage V Collector Current − Continuous I Total Device Dissipation @ TA = 25°C
Derate above 25°C Total Device Dissipation @ TC = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
TJ, T
CEO CBO EBO
C
P
P
D
D
stg
400 Vdc 500 Vdc
6.0 Vdc 300 mAdc 625
5.0
1.5
12
− 55 to +150
mW
mW/°C
mW/°C
W
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
200 °C/W
83.3 °C/W
COLLECTOR
3
2
BASE
1
EMITTER
MARKING DIAGRAM
MPS
A44
TO−92
(TO−226AA)
1
2
3
CASE 29−11
STYLE 1
A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location
AYWWG
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
1 Publication Order Number:
See detailed ordering and shipping information in the packag
ORDERING INFORMATION
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
MPSA44/D
Page 2
MPSA44
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector− Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0)
Collector− Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)
Collector− Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
Emitter− Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCB = 400 Vdc, IE = 0)
Collector Cutoff Current (VCE = 400 Vdc, VBE = 0)
Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain (Note 1) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc)
Collector− Emitter Saturation Voltage (Note 1) (IC = 1.0 mAdc, IB = 0.1 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)
Base− Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Output Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Small−Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
V
CE(sat)
V
BE(sat)
C
C
h
FE
obo
ibo
fe
400 − Vdc
500 − Vdc
500 − Vdc
6.0 − Vdc
− 0.1
mAdc
− 500 nAdc
− 0.1
mAdc
− 40 50 45 40
−
200
−
− Vdc
−
−
−
0.4
0.5
0.75
− 0.75 Vdc
− 7.0 pF
− 130 pF
1.0 − −
ORDERING INFORMATION
Device Package Shipping
MPSA44 TO−92 5000 Units / Box MPSA44G TO−92
5000 Units / Box
(Pb−Free) MPSA44RL1 TO−92 2000 / Tape & Reel MPSA44RL1G TO−92
2000 / Tape & Reel
(Pb−Free) MPSA44RLRA TO−92 2000 / Tape & Reel MPSA44RLRAG TO−92
2000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
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2
Page 3
MPSA44
160
140
120
100
, DC CURRENT GAIN
FE
h
TA = 125°C
80
60
40
20
1.0
2.0 5.0 10 20 50 200 300
25°C
−55°C
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1.0
TA = 25°C
V
V
BE(on)
BE(sat)
0.8
0.6
100
@ IC/IB = 10
@ VCE = 10 V
VCE = 10 V
0.5
0.4
IC = 1.0 mA
0.3
0.2
0.1
, COLLECTOR−EMITTER VOLTAGE (VOLTS
CE
V
0
10 10 k300
30 100 1.0 k 3.0 k 50 k
Figure 2. Collector Saturation Region
1000
300 200
TA = 25°C
100
IC = 10 mA
IB, BASE CURRENT (mA)
TC = 25°C
IC = 50 mA
1.0 ms
1.0 s
TA = 25°C
100 ms
0.4
V, VOLTAGE (VOLTS)
V
0.2
0
0.1 30
0.3 300
1.0 IC, COLLECTOR CURRENT (mA)
@ IC/IB = 10
CE(sat)
3.0 10 100
Figure 3. “On” Voltages
100
C
ib
C
ob
TA = 25°C f = 1.0 MHz
REVERSE BIAS (VOLTS)
C, CAPACITANCE (pF)
50
20
10
5.0
2.0
1.0
20
, COLLECTOR CURRENT (mA)
C
I
10
2.0
1.0
1.0 2.0
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
VALID FOR DUTY CYCLE ≤ 10%
10
5.0
VCE, COLLECTOR VOLTAGE (VOLTS)
20 50
MPSA44
100 200 500
Figure 4. Active Region − Safe Operating Area
10
VCE = 10 V
3.0
2.0
|, SMALL−SIGNAL CURRENT GAIN
1.5
fe
|h
1.0
10030103.01.00.50.3
300
0.1 303.0 100.3 1001.00.2
f = 10 MHz TA = 25°C
IC, COLLECTOR CURRENT (mA)
Figure 5. Capacitance
Figure 6. High Frequency Current Gain
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3
Page 4
MPSA44
5.0
10
+9.7 V
V
in
PW = 50 mS
2.0
1.0
t, TIME (s)μt, TIME (s)μ
0.5
0
−4.0 V
DUTY CYCLE = 2.0%
VCC = 150 V
V
0.2
0.1
1.0
IC/IB = 10 TA = 25°C V
= 4.0 Vdc
BE(off)
t
r
t
d
3.0 10 30 50 IC, COLLECTOR CURRENT (mA)
100
R
B
V
in
R
CC
L
V
out
CS ≤ 4.0 pF*
Figure 7. Turn−On Switching Times and Test Circuit
5.0
2.0
1.0
10
+10.7 V
t
s
V
in
PW = 50 mS DUTY CYCLE = 2.0%
0.5 VCC = 150 V
IC/IB = 10
0.2
0.1
1.0 3.0 10 30 50
TA = 25°C
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn−Off Switching Times and Test Circuit
*Total Shunt Capacitance or Test Jig and Connectors.
t
f
100
−11.4 V
V
CC
R
L
V
R
B
V
in
out
CS ≤ 4.0 pF*
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Page 5
SEATING PLANE
MPSA44
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
NOTES:
A
B
R
P
L
K
XX
H
V
1
G
C
N
D
J
SECTION X−X
N
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 K 0.500 −−− 12.70 −−− L 0.250 −−− 6.35 −−− N 0.080 0.105 2.04 2.66 P −−− 0.100 −−− 2.54 R 0.115 −−− 2.93 −−− V 0.135 −−− 3.43 −−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
MILLIMETERSINCHES
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MPSA44/D
5
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