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NPN Silicon High-Voltage Transistors
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: MPSA 92
MPSA 93 (PNP)
MPSA 42
MPSA 43
1
2
3
Type Marking Ordering Code Pin Configuration Package
123
MPSA 42
MPSA 43
MPSA 42
MPSA 43
Q68000-A413
Q68000-A4809
E B C TO-92
Maximum Ratings
Parameter Symbol Values Unit
MPSA 42 MPSA 43
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TC = 66 ˚C
Junction temperature
V
CE0
V
CB0
V
EB0
I
C
I
B
2)
P
tot
T
j
300 200 V
300 200
6
500 mA
100
625 mW
150 ˚C
1)
Storage temperature range
T
stg
– 65 … + 150
Thermal Resistance
Junction - ambient
Junction - case
1)
For detailed information see chapter Package Outlines.
2)
Mounted on AI-heat sink 15 mm × 25 mm × 0.5 mm.
2)
R
R
th JA
th JC
≤ 200 K/W
≤ 135
Semiconductor Group 1 5.91
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MPSA 42
MPSA 43
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter Symbol Limit Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 1 mA, IB = 0 MPSA 42
C
MPSA 43
Collector-base breakdown voltage
I
= 100 µA, IB = 0 MPSA 42
C
MPSA 43
Emitter-base breakdown voltage
I
= 100 µA, IC = 0
E
Collector-base cutoff current
V
= 200 V MPSA 42
CB
V
= 160 V MPSA 43
CB
V
= 200 V, TA = 150 °C MPSA 42
CB
V
= 160 V, TA = 150 °C MPSA 43
CB
Emitter-base cutoff current
V
= 3 V, IC = 0
BE
DC current gain
I
=1 mA, VCE = 10 V
C
I
=10 mA, VCE = 10 V
C
I
=30 mA, VCE = 10 V
C
Collector-emitter saturation voltage
I
= 20 mA, IC = 2 mA MPSA 42
C
1)
1)
MPSA 43
V
(BR)CE0
V
(BR)CB0
V
(BR)EB0
I
CB0
I
EB0
h
FE
V
CEsat
V
300
200
300
200
–
–
–
–
–
–
–
–
6––
–
–
–
–
–
–
–
–
100
100
20
20
nA
nA
µA
µA
– – 100 nA
–
25
40
40
–
–
–
–
–
–
V
–
–
–
–
0.5
0.4
Base-emitter saturation voltage
I
= 20 mA, IB = 2 mA
C
AC Characteristics
Transition frequency
I
= 20 mA, VCE = 10 V, f = 100 MHz
C
Collector-base capacitance
V
= 20 V, f = 1 MHz MPSA 42
CB
MPSA 43
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2%.
Semiconductor Group 2
V
f
C
BEsat
T
obo
– – 0.9
– 70 – MHz
pF
–
–
–
–
3
4
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MPSA 42
MPSA 43
Total power dissipation P
= f (TA; TC)
tot
Permissible pulse load R
thJA
= f (tp)
Operating range
T
= 25 °C, D = 0
A
I
= f(VCE)
C
Collector cutoff current
V
= V
CB
CBmax
I
CB0
= f (TA)
Semiconductor Group 3
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MPSA 42
MPSA 43
DC current gain hFE = f (IC)
V
= 10 V
CE
Transition frequency fT = f (IC)
V
= 20 V, f = 20 MHz, VCE = 10 V
CE
Collector current
V
= 10 V
CE
I
= f (VBE)
C
Semiconductor Group 4
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