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UTC MPSA42/43 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC MPSA42/43 are high voltage transistors,
designed for telephone switch and high voltage
switch.
FEATURES
*Collector-Emitter voltage:
VCEO=300V(UTC MPSA42)
VCEO=200V(UTC MPSA43)
*High current gain
*Complement to UTC MPSA92/93
*Collector Dissipation:
Pc(max)=625mW
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage
UTC MPSA42
UTC MPSA43
Collector-Emitter Voltage
UTC MPSA42
UTC MPSA43
Emitter-Base Voltage VEBO 6 V
Collector Dissipation Pc 625 mW
Collector Current Ic 500 mA
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C
VCBO 300
VCEO 300
1
TO-92
1:EMITTER 2:BASE 3:COLLECTOR
V
200
V
200
ELECTRICAL CHARACTERISTICS(Tj=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
UTC MPSA42
UTC MPSA43
Collector-Emitter Breakdown Voltage
UTC MPSA42
UTC MPSA43
Emitter-Base Breakdown Voltage BVEBO IE=100µA,Ic=0 6 V
Collector Cut-Off Current
UTC MPSA42
UTC MPSA43
Emitter Cut-Off Current
UTC MPSA42
UTC MPSA43
BVCBO Ic=100µA,IE=0
BVCEO Ic=1mA,IB=0
ICBO
VCB=200V,IE=0
VCB=160V,IE=0
IEBO
VBE=6V,Ic=0
VBE=4V,Ic=0
300
200
300
200
100
100
100
100
UTC UNISONIC TECHNOLOGIES CO., LTD.
V
V
nA
nA
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UTC MPSA42/43 NPN EPITAXIAL SILICON TRANSISTOR
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
DC Current Gain(note) hFE VCE=10V,Ic=1mA
VCE=10V,Ic=10mA
VCE=10V,Ic=30mA
Collector-Emitter Saturation Voltage VCE(sat) Ic=20mA,IB=2mA 0.2 V
Base-Emitter Saturation Voltage VBE(sat) Ic=20mA,IB=2mA 0.90 V
Current Gain Bandwidth Product fT VCE=20V,Ic=10mA,
f=100MHz
Collector Base Capacitance
UTCMPSA42
Ccb VCB=20V,IE=0
f=1MHz 3
UTCMPSA43
TYPICAL PERFORMANCE CHARACTERISTICS
80
80
300
80
50 MHz
pF
4
3
10
FE
2
10
1
10
DC current Gain,H
0
10
0
10
2
10
1
10
-1
10
Collector-Base voltage(V)
Fig.1 DC Current Gain
VCE=10V
1
10
Collector current, Ic(mA)
Fig.3 Capacitance
IE=0
f=1MHz
0
10
10
Fig.2 Saturation Voltage
1
10
Ic=10*I
B
0
10
-1
10
VCE(sat),VBE(sat) (V)
-2
2
10
10
-1
10
VBE(sat)
VCE(sat)
0
10
1
10
10210
3
Collector current, Ic(mA)
Fig.4 Current Gain
Bandwidth product
3
10
2
10
product(MHz)
Current gain bandwidth
1
1
2
10
10
0
10
Collector current, Ic(mA)
VCE=20V
1
10
2
10
UTC UNISONIC TECHNOLOGIES CO., LTD.
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