Page 1
MPSA13 / 14
A suffix of "-C" specifies halogen & lead-free
RoHS Compliant Product
FEATURES
Darlington TRANSISTOR
Power dissipation
P
0.625 W (Tamb=25℃)
CM:
Collector current
I
0.5 A
CM:
Collector-base voltage
V
: 30 V
(BR)CBO
Operating and storage junction temperature range
T
, T
: -55℃ to +150℃
J
stg
NPN Epitaxial Silicon Transistor
TO-92
1
2
3
1
2
3
1. EMITTER
2. BASE
.
COLLECTOR
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitte r c u t -o ff current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V(BR)
V(BR)
V(BR)
H
H
V
V
Ic= 100µA, IE=0 30 V
CBO
I
CEO
I
EBO
V
I
CBO
V
I
EBO
V
CE
*
FE(1)
FE(2)
CE(sat)
BE(on)
f
T
MPSA14
V
CE
*
MPSA14
* IC= 100mA, IB=0.1 mA 1.5 V
* VCE=5V, IC= 100mA 2.0 V
V
CE
= 1mA , IB=0 30 V
C
= 100µA, IC=0 10 V
E
= 30V, IE=0 0.1 µA
CB
= 10V, IC=0 0.1 µA
EB
=5V, IC=10mA MPSA13
=5V, IC=100mA MPSA13
5000
10000
10000
20000
=5V, IC= 10mA , f=100MHz 125 MHz
01-Jun-2002 Rev. A
* Pulse Test: pulse width 300µs, duty cycle 2%.
Any changing of specification will not be informed individual
Page 1 of 3
Page 2
MPSA13 / 14
Elektronische Bauelemente
Typical Characteristics
1M
100k
10k
, DC CURRENT GAIN
FE
h
1k
1 10 100 1000
IC [mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
VCE = 5V
NPN Epitaxial Silicon Transistor
VBE(sat)
VCE(sat)
IC = 1000 I
B
10
1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.1
10 100
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
100
10
[mA], COLLECTOR CURRENT
C
I
1
0.0 0.4 0.8 1.2 1.6 2.0 2.4
VBE [V], BASE-EMITTER VOLTAGE
VCE = 5V
1000
100
10
110100
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage Figure 4. Current Gain Bandwidth Product
VCE = 5V
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 3
Page 3
MPSA13 / 14
Elektronische Bauelemente
TO-92 PACKAGE OUTLINE DIMENSIONS
D
E
b
NPN Epitaxial Silicon Transistor
D1
A1
A
φ
C
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Ö
L
e
e1
Dimensions In Millimeters Dimensions In Inches
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
1.270TYP
2.440
14.100
0.000
Max
3.700
1.400
0.550
0.510
4.700
4.700
2.640
14.500
1.600
0.380
Min
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.096
0.555
0.000
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.050TYP
0.104
0.571
0.063
0.015
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 3
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