Page 1
MPSA05
MPSA06
Driver NPN Transistors
ABSOLUTE MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Total Device Dissipation T =25 C
Junction Temperature
Storage, Temperature
A
(Ta=25 C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
j
Tstg
1. EMITTER
2. BASE
3. COLLECTOR
60
60
0.625
-55 to +150
TO-92
4.0
500
150
1
2
3
MPSA06MPSA05
80
80
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
MPSA05
MPSA06
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0)
MPSA05
MPSA06
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)
Collector Cutoff Current
(VCE= 50 Vdc, I =0)
(VCE= 60 Vdc, I =0)
Collector Cutoff Current
(VCE= 60 Vdc, I =0)
(VCE= 80 Vdc, I =0)
Emitter Cutoff Current (VEB= 3.0V c, I =0)
B
B
B
B
MPSA05
MPSA06
MPSA05
MPSA06
d
C
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CE0
I
CBO
I
EBO
60
80
60
80
4.0
-
-
-
-
-
-
0.1
0.1
0.1
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
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Page 2
MPSA05
MPSA06
ELECTRICAL CHARACTERISTICS (T
Characteristics
ON CHARACTERISTICS
DC Current Gain
(IC= 100 mAdc, V
CE=1.0 Vdc
Collector-Emitter Saturation Voltage
(IC= 100 mAdc, IB= 10 mAdc)
Base-Emitter Saturation Voltage
(IC= 100 mAdc, IB= 10 mAdc)
Current-Gain-Bandwidth Product
(IC= 10 mAdc, VCE= 2.0 Vdc, f=100 MHz)
)
=25 C unless otherwise noted) (Countinued)
A
Symbol
(1)
h
FE
V
CE(sat)
V
BE(sat)
f
T
100 -
-
-
100
TYP
-
-
-
-
Max
0.25
1.2
-
UnitMin
-
Vdc
Vdc
MHz
300
VCE = 2.0 V
= 25 C
T
200
100
, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
f
J
70
50
30
3.0 5.0 7.0 10 20 30 50 70
IC, COLLECTOR CURRENT (mA)
F IG 1. C urrent-G ain B andwidth P roduc t
80
20
TJ = 25 C
C
obo
501.0 2.0 5.00.2 0.5
60
40
C
ibo
20
10
C, CAPACITANCE (pF)
8.0
6.0
100 2002.0
4.0
V
, REVERSE VOL TAGE (VOLTS)
R
10 1000.1
F IG 2. C apa c itanc e
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Page 3
MPSA05
MPSA06
400
TJ = 125 C
VCE = 1.0 V
200
100
80
, DC CURRENT GAIN
FE
h
60
40
1.0
25 C
-55 C
2.0 5000.5
3.0 5.0
I
10
, COLLECTOR CURRENT (mA)
C
20 10030 50 200 300
F IG 3. DC C urrent G ain
1.0
TJ = 25 C
0.8
0.6
IC =
50 mA
IC =
100 mA
IC =
250 mA
IC =
500 mA
1.0
TJ = 25 C
0.8
0.6
0.4
V, VOLTAGE (VOLTS)
0.2
V
CE(sat)
0
0.5 2.0 5.0 20020 50
V
@ IC/IB = 10
BE(sat)
V
@ VCE = 1.0 V
BE(on)
@ IC/IB = 10
10 5001.0
IC, COLLECTOR CURRENT (mA)
F IG 4. " O N " Volta ges
-0.8
-1.2
-1.6
100
0.4
IC =
10 mA
0.2
, COLLECTOR-EMITTER VOLTAGE (VOLTS)V
CE
0
0.1 100.05
F IG 5. C ollec tor S aturation R egion
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1.0
I
, BASE CURRENT (mA)
B
R
for V
VB
-2.0
-2.4
, TEMPERATURE COEFFICIENT (mV/ C)
VB
R
202.0 5.00.2 0.5
50
-2.8
1.0 2.0 5.0 20 50 200
BE
10
I
, COLLECTOR CURRENT (mA)
C
100 5000.5
F IG 6. B as e-E mitter Tempera ture
C oefficie nt
Page 4
MPSA05
MPSA05
TO-92 Outline Dimensions unit:mm
E
H
C
L
J
K
G
B
A
D
Dim
A
B
C
D
E
G
H
J
K
L
Min
3.30
1.10
0.38
0.36
4.40
3.43
4.30
2.44
14.10
Max
3.70
1.40
0.55
0.51
4.70
-
4.70
1.270TYP
2.64
14.50
TO-92
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