Datasheet mps6729-d Datasheet

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Page 1

MPS6729

Preferred Device

One Watt Amplifier Transistor

PNP Silicon

Features

• Pb−Free Package is Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector− Emitter Voltage V Collector− Base Voltage V Emitter− Base Voltage V Collector Current − Continuous I Total Device Dissipation @ TA = 25°C

Derate above 25°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Junction Temperature Range

CEO CBO EBO

TJ, T

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

−80 Vdc

−4.0 Vdc

−500 mAdc

1.0

8.0

2.5 20

−55 to +150 °C

125 °C/W

50 °C/W

mW/°C

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COLLECTOR

BASE

MARKING DIAGRAM

MPS 6729

AYWWG

EMITTER

TO−92 (TO−226)

CASE 29−10

STYLE 1

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

January, 2006 − Rev. 1

1 Publication Order Number:

MPS6729 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

MPS6729 TO−92 5000 Units / Bulk MPS6729G TO−92

(Pb−Free)

Preferred devices are recommended choices for future use and best overall value.

5000 Units / Bulk

MPS6729/D

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MPS6729

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector− Emitter Breakdown Voltage (Note 1)

(IC = −1.0 mAdc, IB = 0)

Collector− Base Breakdown Voltage

(IC = 0.1 mA, IE = 0)

Emitter− Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

Collector Cutoff Current

(VCB = −60 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = −5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −250 mAdc, VCE = −1.0 Vdc)

Collector− Emitter Saturation Voltage

(IC = −250 mAdc, IB = −10 mAdc)

Base−Emitter On Voltage

(IC = −250 mAdc, VCE = −1.0 Vdc)

SMALL− SIGNAL CHARACTERISTICS

Collector−Base Capacitance

(VCB = −10 Vdc, f = 1.0 MHz)

Small−Signal Current Gain

(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Symbol Min Max Unit

(BR)CEO

(BR)CBO

(BR)EBO

CBO

EBO

CE(sat)

BE(on)

−80 − Vdc

−5.0 − Vdc

− −0.1

− −10

80 50

250

mAdc

−

− −0.5 Vdc

− −1.2 Vdc

− 30 pF

2.5 25

−

400

TJ = 125°C

200

25°C

−55°C

100

, DC CURRENT GAIN

−0.5 −0.7 −1.0 −2.0 −3.0 −5.0 −7.0

−10 −20 −30 −50 −70 −100 −200

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

VCE = −1.0 V

−300 −500

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MPS6729

−1.0

TJ = 25°C

−0.8

−0.6 IC = −10 mA

−0.4

−0.2

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

−0.1 −10−1.0

−0.05 −0.2 −0.5 −2.0 −5.0 −20 −50

−50

−100 mA −250 mA −500 mA

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

−0.8

−1.2

−1.6

V, VOLTAGE (VOLTS)

−1.0

−0.8

−0.6

−0.4

−0.2

100

TJ = 25°C

@ IC/IB = 10

BE(sat)

@ VCE = −1.0 V

BE(on)

@ IC/IB = 10

CE(sat)

−0.5

−1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500 IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

ibo

TJ = 25°C

qVB for V

−2.0

−2.4

, TEMPERATURE COEFFICIENT (mV/ C)°θ

−2.8

−1.0 −100−10

−0.5 −2.0 −5.0 −20 −50 −200

IC, COLLECTOR CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

200

VCE = −2.0 V TJ = 25°C

100

f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

IC, COLLECTOR CURRENT (mA)

Figure 6. Current−Gain − Bandwidth Product

−100

−500

−200−70−50−30−20−10−7.0−5.0−3.0−2.0

C, CAPACITANCE (pF)

7.0

5.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitance

DUTY CYCLE ≤ 10%

−2 k

−1 k

−500

−200

−100

, COLLECTOR CURRENT (mA)

−50

−20

−10

−1.0

TA = 25°C

TC = 25°C

CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT

−2.0 −5.0

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

1.0 s

MPSW55

MPSW56

−10 −20 −60 −80 −100

Figure 7. Active Region − Safe Operating Area

1.0 ms

obo

100 ms

−100−50−20−10−5.0−2.0−1.0−0.5−0.2−0.1

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MPS6729

TO−92 (TO−226)

PACKAGE DIMENSIONS

CASE 29−10

ISSUE AL

SEATING PLANE

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.44 5.21 B 0.290 0.310 7.37 7.87 C 0.125 0.165 3.18 4.19 D 0.018 0.021 0.457 0.533 F 0.016 0.019 0.407 0.482 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.018 0.024 0.46 0.61 K 0.500 −−− 12.70 −−− L 0.250 −−− 6.35 −−− N 0.080 0.105 2.04 2.66 P −−− 0.100 −−− 2.54 R 0.135 −−− 3.43 −−−

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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For additional information, please contact your local Sales Representative.

MPS6729/D