Page 1
MPS4126
s
l
Amplifier Transistor
PNP Silicon
Features
• This is a Pb−Free Device*
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COLLECTOR
3
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ, T
CE
CB
EB
C
P
D
P
D
stg
−25 Vdc
−25 Vdc
−4.0 Vdc
−200 mAdc
625
5.0
1.5
12
−55 to +150 °C
W
mW/°C
W
mW/°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
200 °C/W
83.3 °C/W
2
BASE
1
EMITTER
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
4126
AYWWG
G
TO−92
CASE 29
STYLE 1
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 4
1 Publication Order Number:
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
MPS4126RLRAG TO−92
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.
2,000/Tape & Ree
MPS4126/D
†
Page 2
MPS4126
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
Output Capacitance
Input Capacitance
Small−Signal Current Gain
Noise Figure
(I
= −1.0 mA, IB = 0)
C
(IC = −10 mA, IE = 0)
= 0, IE = −10 mA)
(I
C
(V
= −20 V, IE = 0)
CB
(VEB = −3.0 V, IC = 0)
(I
= −2.0 mA, VCE = −1.0 V)
C
(IC = −50 mA, VCE = −1.0 V)
(I
= −50 mA, IB = −5.0 mA)
C
(I
= −50 mA, IB = −5.0 mA)
C
(I
= −10 mA, VCE = −20 V, f = 100 MHz)
C
(V
= −5.0 V, IE = 0, f = 1.0 MHz)
CB
(V
= −0.5 V, IC = 0, f = 1.0 MHz)
EB
(I
= −2.0 mA, VCE = 1.0 V, f = 1.0 kHz)
C
= −100 mA, VCE = −5.0 V, RS = 1.0 kW, f = 1.0 kHz)
(I
C
= 25°C unless otherwise noted)
A
Symbol Min Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(sat)
V
BE(sat)
f
C
C
h
NF
FE
−25 −
−25 −
−4.0 −
− −50
− −50
120
60
360
−
− −0.4
− −0.95
T
ob
ib
fe
170 −
− 4.5
− 11.5
120 480
Vdc
Vdc
Vdc
nAdc
nAdc
Vdc
Vdc
MHz
pF
pF
dB
− 4.0
−
−
http://onsemi.com
2
Page 3
MPS4126
TO−92 (TO−226)
PACKAGE DIMENSIONS
CASE 29−1 1
ISSUE AM
SEATING
PLANE
R
T
SEATING
PLANE
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
K
XX
V
1
G
H
C
N
D
J
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
MILLIMETERSINCHES
N
A
B
P
K
XX
G
V
1
C
N
BENT LEAD
TAPE & REEL
AMMO PACK
D
J
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 −−−
N 2.04 2.66
P 1.50 4.00
R 2.93 −−−
V 3.43 −−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your local
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MPS4126/D
3
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