Datasheet mps3646-d Datasheet

ON Semiconductort

Switching Transistor

NPN Silicon

w This device is available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current — Continuous

CEO

CES

CBO

EBO

I

C

— 10 ms Pulse

Total Device Dissipation @ TA = 25°C

P

D

Derate above 25°C

Total Device Dissipation @ TC = 25°C

P

D

Derate above 25°C

Operating and Storage Junction

TJ, T

stg

Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T

R

q

JA

R

q

JC

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)

Collector−Emitter Sustaining Voltage

Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0)

Emitter−Base Breakdown Voltage (IE = 100 mAdc, IC = 0)

Collector Cutoff Current

(V

= 20 Vdc, VBE = 0)

CE

= 20 Vdc, VBE = 0, TA = 65°C)

(V

CE

ON CHARACTERISTICS

(1)

DC Current Gain (IC = 30 mAdc, VCE = 0.4 Vdc)

Collector−Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc)

Base −Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc)

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

(1)

(I

= 100 mAdc, VCE = 0.5 Vdc)

C

= 300 mA, VCE = 1.0 Vdc)

(I

C

(I

= 100 mAdc, IB = 10 mAdc)

C

= 300 mAdc, IB = 30 mAdc)

(I

C

(I

= 30 mA, IB = 3.0 mA, TA = 65°C)

C

(I

= 100 mAdc, IB = 10 mAdc)

C

= 300 mAdc, IB = 30 mA)

(I

C

15 Vdc

40 Vdc

5.0 Vdc

300 500

625

5.0

1.5 12

−55 to +150 °C

200 °C/W

83.3 °C/W

(IC = 10 mAdc, IB = 0) V

MPS3646

ON Semiconductor Preferred Device

1

2

3

CASE 29−11, STYLE 1

mAdc

mW

mW/°C

Watts

mW/°C

Symbol Min Max Unit

V

(BR)CES

CEO(sus)

V

(BR)CBO

V

(BR)EBO

I

CES

h

FE

V

CE(sat)

V

BE(sat)

TO−92 (TO−226AA)

COLLECTOR

2

BASE

EMITTER

40 — Vdc

15 — Vdc

40 — Vdc

5.0 — Vdc

— —

30 25 15

— — — —

0.73 — —

3

1

0.5

3.0

120

— —

0.2

0.28

0.5

0.3

0.95

1.2

1.7

mAdc

—

Vdc

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

1 Publication Order Number:

March, 2006 − Rev. 3

MPS3646/D

MPS3646

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

A

Characteristic

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(I

= 30 mAdc, VCE = 10 Vdc, f = 100 MHz)

C

Output Capacitance

(V

= 5.0 Vdc, IE = 0, f = 1.0 MHz)

CB

Input Capacitance

(V

= 0.5 Vdc, IC = 0, f = 1.0 MHz)

EB

SWITCHING CHARACTERISTICS

Turn−On Time

Delay Time t

Rise Time t

Turn−Off Time

Fall Time t

Storage Time

(V

= 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2)

CC

(VCC = 10 Vdc, IC = 300 mAdc, IB1 = 30 mAdc)

(Figure 1)

(VCC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc)

(Figure 1)

−3.0 V

+10 V

Symbol Min Max Unit

f

T

C

obo

C

ibo

t

on

d

r

t

off

f

t

s

350 — MHz

— 5.0 pF

— 9.0 pF

— 18 ns

— 10 ns

— 15 ns

— 28 ns

— 15 ns

— 18 ns

+7.6 V

0

tr, tf < 1.0 ns Pulse Width ≥ 240 ns Zin = 50 Ω

0

−10 V

< 1.0 ns

t

r

V

Pulse Width = 300 ns Duty Cycle = 2.0% Z

= 50 Ω

in

1.0 k

V

0.1

in

120

50

33

To Sampling Scope t

< 1.0 ns

r

= 100 kΩ

Z

in

Figure 1. Switching Time Test Circuit

+10 V

+11 V

500

91

890

500

in

“A”

56

+6.0 V

0.1

To Sampling Scope t

≤ 1.0 ns

r

= 100 kΩ

Z

in

Figure 2. Charge Storage Time Test Circuit

−4 V

10% Pulse

Waveform

10%

t

at Point “A”

V

s

out

0

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2

100

MPS3646

CURRENT GAIN CHARACTERISTICS

MPS3646

V

= 1 V

70

50

TJ = 125°C

25°C

CE

30

20

FE

h , DC CURRENT GAIN

1.0

0.8

0.6

0.4

VOLTAGE (VOLTS)

0.2

CE

V , MAXIMUM COLLECTOR−EMITTER

0

0.1

−15°C

−55°C

2.0 3.0 10 50

IC, COLLECTOR CURRENT (mA)

30205.0 7.0

Figure 3. Minimum Current Gain

“ON” CONDITION CHARACTERISTICS

IC = 10 mA 50 mA

0.5 2.0 3.0 500.2 0.3

1.00.7 5.0 7.0

100 mA

200 mA

7010100

20 3010

MPS3646

T

= 25°C

J

200

1.2 IC/IB = 10

T

= 25°C

J

1.0

0.8

0.6

0.4

, SATURATION VOLTAGE (VOLTS)

0.2

sat

V

1.0 2.0 5.0 10 20

3.0 7.0 30

IC, COLLECTOR CURRENT (mA)

Figure 5. Saturation Voltage Limits

Figure 4. Collector Saturation Region

1.0

MAX V

MIN V

MAX V

500100

BE(sat)

CE(sat)

70

200

0.5

−0.5

−1.0

−1.5

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

V

−2.0

qVC for V

0

qVB for V

0 80 120 16040

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3

CE(sat)

BE

IC, COLLECTOR CURRENT (mA)

(25°C to 125°C)

(−55 °C to 25°C)

(25°C to 125°C)

(−55 °C to 25°C)

Figure 6. Temperature Coefficients

200

MPS3646

DYNAMIC CHARACTERISTICS

200

100

70

50

30

20

, DELAY TIME (ns)

d

t

10

7.0

5.0

1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

Figure 7. Delay Time

50

30

20

, STORAGE TIME (ns)

10

s

t

7.0

5.0

1.0 2.0 5.0 10 20

IC/IB = 20

IC, COLLECTOR CURRENT (mA)

td @ V

0 V

EB(off)

= 3 V

2 V

IC/IB = 10

ts′ ^ t

VCC = 10 V

T

= 25°C

J

50

T T

− 1/8 t

s

IB1 = I

50

100 200

= 25°C

J

= 125°C

J

f

B2

100 200

200

100

70

50

VCC = 10 V

30

20

, RISE TIME (ns)

r

t

VCC = 3 V

10

7.0

5.0

1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

Figure 8. Rise Time

200

100

70

50

30

20

, FALL TIME (ns)

f

t

10

7.0

5.0

1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

IC/IB = 10

50

IC/IB = 20

50 100 200

= 10

I

C/IB

= 25°C

T

J

= 125°C

T

J

100 200

VCC = 10 V T

= 25°C

J

= 125°C

T

J

Figure 9. Storage Time

10

7.0

C

ibo

5.0

CAPACITANCE (pF)

3.0

2.0

0.1 0.2 0.5 1.0 2.0

REVERSE BIAS (Vdc)

Figure 11. Junction Capacitance

MAX TYP

C

obo

5.0

10

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1000

700 500

300

200

100

Q, CHARGE (pC)

70

50

30

20

4

Figure 10. Fall Time

IC/IB = 10 T

= 25°C

J

= 125°C

T

J

Q

VCC = 3 V

VCC = 10 V

Q

A

VCC = 3 V

1.0 2.0 5.0 10 20

3.0 7.0

IC, COLLECTOR CURRENT (mA)

Figure 12. Maximum Charge Data

T

30 70

50 100 200

MPS3646

PACKAGE DIMENSIONS

CASE 029−11

(TO−226AA)

ISSUE AD

A

R

P

F

XX

G

H

B

SEATING PLANE

L

K

D

J

R

1

23

C

N

SECTION X−X

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.44 5.21 B 0.290 0.310 7.37 7.87 C 0.125 0.165 3.18 4.19 D 0.018 0.021 0.457 0.533 F 0.016 0.019 0.407 0.482 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.018 0.024 0.46 0.61 K 0.500 −−− 12.70 −−− L 0.250 −−− 6.35 −−− N 0.080 0.105 2.04 2.66 P −−− 0.100 −−− 2.54 R 0.135 −−− 3.43 −−−

MILLIMETERSINCHES

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Notes

MPS3646

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6

Notes

MPS3646

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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MPS3646/D

7