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查询MPS2907ARLRA供应商
MPS2907A
Preferred Device
General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current – Continuous I
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
CEO
CBO
EBO
P
P
TJ, T
R
θ JA
R
θ JC
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COLLECTOR
3
–60 Vdc
–60 Vdc
–5.0 Vdc
C
D
D
stg
–600 mAdc
625
5.0
1.5
12
–55 to
+150
200 ° C/W
83.3 ° C/W
mW
mW/° C
Watts
mW/° C
° C
2
BASE
EMITTER
STYLE 1
1
2
3
STYLES 1, 14
MARKING DIAGRAMS
MPS2
907A
YWW
Y = Year
WW = Work Week
1
TO–92
CASE 29
Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 0
ORDERING INFORMATION
Device Package Shipping
MPS2907A TO–92 5000 Units/Box
MPS2907ARLRA TO–92 2000/Tape & Reel
MPS2907ARLRE TO–92 2000/Ammo Pack
MPS2907ARLRM TO–92 2000/Ammo Pack
MPS2907ARLRP TO–92 2000/Ammo Pack
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MPS2907A/D
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MPS2907A
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
= 25° C unless otherwise noted)
A
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 1.)
(IC = –10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = –10 Adc, I E = 0)
Emitter–Base Breakdown Voltage
(IE = –10 Adc, I C = 0)
Collector Cutoff Current
(VCE = –30 Vdc, V
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)
Base Current
(VCE = –30 Vdc, V
EB(off)
EB(off)
= –0.5 Vdc)
= –0.5 Vdc)
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc) (Note 1.)
(IC = –500 mAdc, VCE = –10 Vdc) (Note 1.)
Collector–Emitter Saturation Voltage (Note 1.)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
Base–Emitter Saturation Voltage (Note 1.)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (Notes 1. and 2.),
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn–On T ime
Delay Time
Rise Time t
Turn–Off Time
Storage Time
Fall Time t
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc) (Figures 1 and 5)
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
I
B
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
obo
C
ibo
t
on
t
d
r
t
off
t
s
f
–60 –
–60 – Vdc
–5.0 – Vdc
– –50 nAdc
–
–
– –50 nAdc
75
100
100
100
50
–
–
–
–
200 – MHz
– 8.0 pF
– 30 pF
– 45 ns
– 10 ns
– 40 ns
– 100 ns
– 80 ns
– 30 ns
–0.01
–10
–
–
–
300
–
–0.4
–1.6
–1.3
–2.6
Vdc
µ Adc
–
Vdc
Vdc
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Page 3
MPS2907A
INPUT
Z
= 50 Ω
o
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
0
-16 V
200 ns
-30 V
200
1.0 k
50
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
INPUT
Z
= 50 Ω
o
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
0
-30 V
200 ns
+15 V -6.0 V
1.0 k
50
1.0 k 37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
1N916
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit
TYPICAL CHARACTERISTICS
3.0
2.0
1.0
0.7
0.5
, NORMALIZED CURRENT GAIN
FE
0.3
h
VCE = -1.0 V
VCE = -10 V
T
= 125°C
J
25° C
-55° C
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
0.2
-1.0
-0.8
-0.6
-0.4
-0.2
-0.005
-0.1
0
-0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
IC = -1.0 mA
-0.01
-10 mA
-0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0
IB, BASE CURRENT (mA)
-100 mA
-2.0
-3.0
-5.0 -7.0 -10 -20
-500 mA
-30
Figure 4. Collector Saturation Region
-50
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MPS2907A
TYPICAL CHARACTERISTICS
300
200
t
100
70
50
30
20
t, TIME (ns)
td @ V
10
7.0
5.0
3.0
-5.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
r
= 0 V
BE(off)
IC, COLLECTOR CURRENT
VCC = -30 V
IC/IB = 10
T
J
Figure 5. Turn–On Time
TYPICAL SMALL–SIGNAL CHARACTERISTICS
= 25°C
t, TIME (ns)
2.0 V
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
500
300
200
100
70
50
30
20
10
7.0
5.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
-5.0
t
f
t′
= ts - 1/8 t
s
IC, COLLECTOR CURRENT (mA)
f
VCC = -30 V
IC/IB = 10
IB1 = I
T
= 25°C
J
Figure 6. Turn–Off Time
B2
10
8.0
6.0
4.0
NF, NOISE FIGURE (dB)
2.0
0
0.01
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC = -1.0 mA, R
-500 µ A, Rs = 560 Ω
-50 µ A, Rs = 2.7 kΩ
-100 µ A, Rs = 1.6 kΩ
f, FREQUENCY (kHz)
= 430 Ω
s
Rs = OPTIMUM SOURCE RESISTANCE
Figure 7. Frequency Effects
10
f = 1.0 kHz
8.0
6.0
4.0
NF, NOISE FIGURE (dB)
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
I
= -50 µ A
C
-100 µA
-500 µA
-1.0 mA
Rs, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
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MPS2907A
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
30
20
10
7.0
5.0
C, CAPACITANCE (pF)
3.0
2.0
-0.1
-1.0
-0.8
-0.6
-0.4
V, VOLTAGE (VOLTS)
-0.2
0
-0.1 -0.2 -0.5
-0.2
T
J
C
eb
-0.3
-1.0 -2.0 -3.0 -5.0 -10 -20 -30
-0.5
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
= 25°C
V
@ IC/IB = 10
BE(sat)
V
@ VCE = -10 V
BE(on)
V
@ IC/IB = 10
CE(sat)
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
IC, COLLECTOR CURRENT (mA)
400
300
200
100
80
C
cb
60
40
30
20
, CURRENT-GAIN BANDWIDTH PRODUCT (MHz
T
f
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000
VCE = -20 V
T
= 25°C
J
IC, COLLECTOR CURRENT (mA)
Figure 10. Current–Gain — Bandwidth Product
+0.5
0
-0.5
-1.0
-1.5
COEFFICIENT (mV/ ° C)
-2.0
-2.5
-0.1 -0.2 -0.5
R
for V
VC
CE(sat)
R
for V
VB
BE
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
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SEATING
PLANE
MPS2907A
PACKAGE DIMENSIONS
TO–92
TO–226AA
CASE 29–11
A
R
XX
G
H
V
1
N
B
P
L
K
D
J
C
SECTION X–X
N
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
V 0.135 --- 3.43 ---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
MILLIMETERS INCHES
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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Page 7
Notes
MPS2907A
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MPS2907A
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
Sales Representative.
MPS2907A/D
8