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MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Emitter Voltage V
CES
70 V
Collector-Emitter Voltage V
CEO
50 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current I
C
1.0 A
Power Dissipation (each transistor) P
D
1.0 W
Power Dissipation (total package) P
D
2.5 W
Operating and Storage Junction Temperature TJ, T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
VCB=40V 500 nA
BV
CEO
IC=10mA 50 V
BV
CES
IC=100μA 70 V
BV
EBO
IE=10μA 5.0 V
V
CE(SAT)
IC=500mA, IB=50mA 0.45 V
V
BE(SAT)
IC=500mA, IB=50mA 0.8 1.0 V
h
FE
VCE=1.0V, IC=100mA 40
h
FE
VCE=2.0V, IC=500mA 30
f
T
VCE=10V, IC=50mA, f=100MHz 200 MHz
C
ob
VCB=10V, IE=0, f=1.0MHz 10 pF
C
ib
VEB=0.5V, I
C
=0, f=1.0MHz 80 pF
MPQ3725A
NPN SILICON
QUAD TRANSISTOR
TO-116 CASE
Central
Semiconductor Corp.
TM
R0 (5-December 2007)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ3725A type is
comprised of four independant silicon NPN transistors
mounted in a 14-Pin DIP case, designed for core driver
applications.
MARKING CODE: FULL PART NUMBER
Page 2
Central
Semiconductor Corp.
TM
TO-116 CASE - MECHANICAL OUTLINE
MPQ3725A
NPN SILICON
QUAD TRANSISTOR
R0 (5-December 2007)
MARKING CODE: FULL PART NUMBER
PIN CONFIGURATION
LEAD CODE:
1) COLLECTOR Q1 8) COLLECTOR Q3
2) BASE Q1 9) BASE Q3
3) EMITTER Q1 10) EMITTER Q3
4) NC 11) NC
5) EMITTER Q2 12) EMITTER Q4
6) BASE Q2 13) BASE Q4
7) COLLECTOR Q2 14) COLLECTOR Q4
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