Datasheet mpq2907 Datasheet

FFB2907A / FMB2907A / MMPQ2907A

FFB2907A

E2

B2

C1

SC70-6

Mark: .2F

NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

pin #1

C2

B1

E1

FMB2907A

C2

E1

C1

E2

B1

pin #1

SuperSOT-6

Mark: .2F

Dot denotes pin #1

B2

MMPQ2907A

B4

E4

B3

E3

B2

E2

B1

E1

SOIC-16

Mark:

MMPQ2907A

pin #1

C1

C2

C3

PNP Multi-Chip General Purpose Amplifier

This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63.

Absolute Maximum Ratings* T

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Collector-Emitter V ol tage 60 V Collector-Base Voltage 60 V Emitter-Base Volt age 5.0 V Collector Current - Continuous 600 mA Operating and Storage Junction Temperature Range -55 to +150

= 25°C unless otherwise noted

A

C

°

C4

4

Thermal Characteristics T

= 25°C unless otherwise noted

A

Symbol Characteristic Max Units

FFB2907A FMB2907A MMPQ2907A

P

D

R

JA

θ

 1998 Fairchild Semiconductor Corporation

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

Effective 4 Die Each Die

300

2.4

700

5.6

415 180

1,000

8.0

125 240

mW

mW/°C

C/W

°

C/W

°

C/W

°

PNP Multi-Chip General Purpose Amplifier

(continued)

FFB2907A / FMB2907A / MMPQ2907A

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

B

I

CEX

I

CBO

Collector-Emitter Breakdown

IC = 10 mA, IB = 0 60 V Voltage* Collector-Base Breakdown Voltage

Emitter-Base Breakdown Volt age Base Cutoff Current VCB = 30 V, V Collector Cutoff Current VCE = 30 V, V

I

= 10 µA, IE = 0

C

I

= 10 µA, IC = 0

E

EB BE

Collector Cutoff Current VCB = 50 V, IE = 0

= 50 V, IE = 0, TA = 125°C

V

CB

60 V

5.0 V = 0.5 V 50 nA = 0.5 V 50 nA

0.02 20

µ µ

ON CHARACTERISTICS

h

FE

V

sat

CE(

V

sat

BE(

DC Current Gain IC = 0.1 mA, VCE = 10 V

= 1.0 mA, VCE = 10 V

I

C

= 10 mA, VCE = 10 V

I

C

= 150 mA, VCE = 10 V*

I

C

= 500 mA, VCE = 10 V*

I

Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA

)

Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA*

)

C

= 500 mA, IB = 50 mA

I

C

= 500 mA, IB = 50 mA

I

C

75 100 100 100

50

300

0.4

1.6

1.3

2.6

A A

V V V V

SMALL SIGNAL CHARACTERISTICS

f

T

C

obo

C

ibo

Current Gain - Bandwidth Product IC = 50 mA, VCE = 20 V,

f = 100 MHz

Output Capacitance VCB = 10 V, IE = 0,

f = 100 kHz

Input Capacitance VEB = 2.0 V, IC = 0,

f = 100 kHz

250 MHz

6.0 pF 12 pF

SWITCHING CHARACTERISTICS

t

on

t

d

t

r

t

off

t

s

t

f

Turn-on Time VCC = 30 V, IC = 150 mA, 30 ns Delay Time IB1 = 15 mA 8.0 ns Rise Time 20 ns Turn-off Time VCC = 6.0 V, IC = 150 mA 80 ns Storage Time IB1 = IB2 = 15 mA 60 ns Fall Time 20 ns

*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model

PNP (Is=650.6E-18 Xti=3 Eg=1.1 1 V af=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2 Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=1 1 1.3n Tf=603.7p Itf=.65 Vtf=5 Xtf=1.7 Rb=10)

T ypical Characteristics

FFB2907A / FMB2907A / MMPQ2907A

PNP Multi-Chip General Purpose Amplifier

(continued)

Typical Pulsed Current Gain

vs Collector Current

500

400

125 °C

300

200

100

FE

h - TYPICAL PULSED CURRENT GAIN

25 °C

- 40 °C

0

0.1 0.3 1 3 10 30 100 300

I - COLLECTOR CURRENT (mA)

C

V = 5V

CE

Bas e-Em itt er Satur ati on

Voltag e vs C o ll ector Cur re nt

1

- 40 °C

0.8

0.6

0.4

0.2

BESAT

0

V - BASE EMITTE R VOLTAGE (V)

110100500

25 °C

125 °C

I - COLLEC TOR CURRENT (mA)

C

β

= 10

Coll ector-Em itt er Sa turatio n Voltag e vs C oll ector Cur rent

0.5

0.4

0.3

0.2

0.1

CESAT

V - COLLECTOR EMITTER VOLTAGE (V)

= 10

β

25 °C

125 °C

0

110100500

I - COLLECTOR CUR RENT (mA)

C

- 40 °C

Base Emitter ON Voltage vs

Co ll ector Current

1

0.8

0.6

0.4

0.2

0

BE( ON)

V - BASE EMITTER ON VOLTAGE (V)

- 40 °C

25 °C

125 °C

V = 5V

CE

0.1 1 10 25

I - COLLECTOR CURRENT (mA)

C

4

Co llect or-Cu to ff Curre nt

vs Amb ie nt Temp er atu re

100

V = 35V

CB

10

1

0.1

CBO

I - COLLECTOR CURRENT (nA)

0.01 25 50 75 100 125

T - A MBIE NT T EMP E R ATUR E ( C)

A

°

Input and Output Capacitance

vs Reverse Bias Voltage

20

16

12

8

CAPACITANCE (pF)

4

0

0.1 1 10 50

REVERSE BIAS VOLTAGE (V)

C

ib

C

ob

Typical Characteristics (continued)

FFB2907A / FMB2907A / MMPQ2907A

PNP Multi-Chip General Purpose Amplifier

(continued)

Swi t c hing Times

vs Collector Current

250

I = I =

200

V = 15 V

150

100

TIME ( nS)

50

0

10 100 1000

I

B1CB2

cc

c

10

t

f

t

r

t

d

I - COLLECTOR CURRENT (mA)

t

s

Rise Time vs Collec t or

and Turn On Base Currents

50

20

10

t = 15 V

r

5

30 ns

2

60 ns

B1

1

I - TURN 0N BASE CURRENT (mA)

10 100 500

I - COLLECTOR CURRENT (mA)

C

Turn On and Turn Off Times

vs Collector Cu rrent

500

I = I =

400

V = 15 V

300

200

TIME ( nS)

100

0

10 100 1000

I

B1CB2

cc

c

10

t

on

I - COLLECTOR CU RRENT (mA)

Power Dissipation vs

Amb ient Tem pe rat ur e

1

0.75

SOT-6

0.5

SC70-6

0.25

D

P - POWER DISSIPATION (W)

0

0 25 50 75 100 125 150

SOIC-16

TEMPERATURE ( C)

°

t

off

PNP Multi-Chip General Purpose Amplifier

Typical Common Emitter Characteristics (f = 1.0kHz)

FFB2907A / FMB2907A / MMPQ2907A

(continued)

Common Emitter Characterist ics

5

C

2

1

0.5

0.2

0.1

_ _ _ _ _ _

12 51020 50

CHAR. RE L ATIVE T O VALUES AT I = -10 m A

I - COLLECTOR CURRENT (mA)

C

o

1.5

1.4

A

1.3

1.2

1.1

0.9

0.8

0.7

0.6

0.5

CHAR. RELATIVE TO VALUES AT T = 25 C

h

oe

h

re

h

fe

h

ie

V = -10 V

CE

o

T = 25 C

A

Common Emitter Characteristics

I = -10mA

C

V = -10 V

CE

h

oe

1

h

re

h

ie

h

fe

-40 -20 0 20 40 60 80 100

T - AMBIENT TEMP ERATURE ( C)

A

Common Emitter Characterist ics

1.3

CE

1.2

h and h

re

oe

1.1

1

h

ie

0.9

h

fe

0.8

CHAR. RELA T IVE TO V ALUES AT V = -10V

h

fe

h

ie

h

re

h

oe

V - COLLEC T O R VOLTA GE (V)

CE

o

h

re

h

ie

h

fe

h

oe

I = -10m A

C

o

T = 25 C

A

-20-16-12-8-4

4

PNP Multi-Chip General Purpose Amplifier

(continued)

FFB2907A / FMB2907A / MMPQ2907A

T est Circuits

- 30 V

ΩΩ

200

Ω

ΩΩ

1.0 K

Ω

ΩΩ

0

≤≤

≤ 200ns

≤≤

- 16 V

50

ΩΩ

Ω

ΩΩ

FIGURE 1: Saturated T urn-On Switching Time Test Circuit

1.5 V

1 K

ΩΩ

1.0 K

Ω

ΩΩ

0

- 30 V 50

ΩΩ

Ω

ΩΩ

- 6.0 V

ΩΩ

Ω

ΩΩ

37

ΩΩ

Ω

ΩΩ

≤≤

≤ 200ns

≤≤

FIGURE 2: Saturated T urn-Off Switching Time T est Circuit

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOS EnSigna

TM

FACT™ FACT Quiet Series™



FAST

FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ P ACMAN™ POP™

PowerTrench



QFET™ QS™ QT Optoelectronics™

Quiet Series™ SILENT SWITCHER SMART ST ART™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8



SyncFET™ TinyLogic™ UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. G