Datasheet MPIC2151D, MPIC2151P Datasheet (Motorola)

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1
Motorola Power Products Division Advanced Data
Power Products Division
 
  
The MPIC2151 is a high voltage, high speed, self–oscillating power MOSFET and IGBT driver with both high side and low side referenced output channels. Pro­prietary HVIC and latch immune CMOS technologies enable ruggedized monolith­ic construction. The front–end features a programmable oscillator which is similar to the 555 timer. The output drivers feature a high pulse current buf fer stage and an internal deadtime designed for minimum driver cross–conduction. Propagation de­lays for the two channels are matched to simplify use in 50% duty cycle applica­tions. The floating channel can be used to drive an N–channel power MOSFET or IGBT in the high side configuration that operates off a high voltage rail from 10 to 600 volts.
Floating Channel Designed for Bootstrap Operation
Fully Operational to +600 V
Tolerant to Negative Transient Voltage
dV/dt Immune
Undervoltage Lockout
Programmable Oscillator Frequency:
f
+
1
1.4 (RT)75W) CT
Matched Propagation Delay for Both Channels
Low Side Output In Phase with RT
PRODUCT SUMMARY
V
OFFSET 600 V MAX
Duty Cycle
50%
V
OUT 10 – 20 V
t
r/f
(typical) 120 & 60 ns Deadtime (typical) 1.2 µs
This document contains information on a new product. Specifications and information herein are subject to change without notice.
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by MPIC2151/D

SEMICONDUCTOR TECHNICAL DATA

Device
Package
SELF–OSCILLATING
HALF–BRIDGE
DRIVER
ORDERING INFORMATION
MPIC2151P PDIP
D SUFFIX
PLASTIC PACKAGE
CASE 751–05
(SO–8)
8
1
(TOP VIEW)
PIN CONNECTIONS
P SUFFIX
PLASTIC PACKAGE
CASE 626–05
8
1
MPIC2151D SOIC
V
B
8V
CC
RT
CT
COM
HO V
S
LO
7 6 5
1 2 3 4
Motorola, Inc. 1996
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MPIC2151
2
Motorola Power Products Division Advanced Data
SIMPLIFIED BLOCK DIAGRAM
PULSE
GEN
PULSE FILTER
HV
LEVEL
SHIFT
COM
LO
V
CC
V
S
V
B
HO
R S
Q
DELAY
DEAD
TIME
DEAD
TIME
UV
DETECT
+
+ –
R
R
R
RT
CT
R
SQQ
15.6 V
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
Rating
Symbol Min Max Unit
High Side Floating Supply Absolute Voltage
V
–0.3
625
V
High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage
V
B
V
–0.3
V
–25
625
V
+0.3
V
DC
High Side Floating Supply Offset Voltage High Side Floating Output Voltage
V
S
V
HO
VB–25
VS–0.3
VB+0.3 VB+0.3
High Side Floating Output Voltage Low Side Output Voltage
V
HO
V
LO
VS–0.3
–0.3
VB+0.3
VCC+0.3
Low Side Output Voltage RT Voltage
V
LO
V
RT
–0.3 –0.3
VCC+0.3 VCC+0.3
CT Voltage
RT
V
CT
–0.3
CC
+0.3
VCC+0.3
Supply Current (Note 1) I
25 mA
Supply Current (Note 1) High Side Output Current
I
CC
I
HO
–50025500
mA
DC
Low Side Output Current
HO
I
LO
–500
500
RT Output Current
IRT–5.0
5.0
Allowable Offset Supply Voltage Transient dVS/dt 50 V/ns *Package Power Dissipation @ TC +25°C (8 Lead DIP)
(8 Lead SOIC)
P
D
– –
1.0
0.625
Watt
Operating and Storage Temperature Tj, T
stg
–55 150 °C
Thermal Resistance, Junction to Ambient (8 Lead DIP)
(8 Lead SOIC)
R
θJA
– –
125 200
°C/W
Lead Temperature for Soldering Purposes, 10 seconds T
L
260 °C
RECOMMENDED OPERATING CONDITIONS
The Input/Output logic timing Diagram is shown in Figure 1. For proper operation the device should be used within the recommended condi­tions.
High Side Floating Supply Absolute Voltage
V
B
VS+10 VS+V
clamp
V
High Side Floating Supply Offset Voltage V
S
600
High Side Floating Output Voltage V
HO
V
S
V
B
Low Side Output Voltage V
LO
0 V
CC
Supply Current (Note 1) I
CC
5.0 mA
Ambient Temperature T
A
–40 125 °C
Note 1: Because the MPIC2151 is designed specifically for off–line supply systems, this IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6 V . Therefore, the IC supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value resistor connected between the chip VCC and the rectified line voltage and a local decoup­ling capacitor from VCC to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC, low impedance power source of greater than V
CLAMP
.
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MPIC2151
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Motorola Power Products Division Advanced Data
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit STATIC ELECTRICAL CHARACTERISTICS Supply Characteristics
V
BIAS
(VCC, VBS) = 12 V, VSS = COM and CL = 1000 pF unless otherwise specified.
VCC Supply Undervoltage Positive Going Threshold
V
CCUV+
8.4
V
DC
VCC Supply Undervoltage Negative Going Threshold V
CCUV–
8.0
Quiescent VCC Supply Current I
QCC
400 µA
VCC Zener Shunt Clamp Voltage @ IOC = 5 mA V
CLAMP
15.6 V
DC
Floating Supply Characteristics
Offset Supply Leakage Current @ VB = VS = 600 V I
LK
50
µA
DC
Quiescent VBS Supply Current I
QBS
10
Oscillator I/O Characteristics
Oscillator Frequency @ RT = 35.7 KΩ, CT = 1 nF f
OSC
20
kHz
Oscillator Frequency @ RT = 7.04 KΩ, CT = 1 nF f
OSC
100
CT Input Current I
CT
0.001 1.0 µA
CT Undervoltage Lockout @ 2.5 V < VCC < V
CCUV+
V
CTUV
0
mV
RT High Level Output Voltage, VCC – RT @ IRT = –100 µA
@ IRT = –1 mA
V
RT+
V
RT+
– –
20
200
– –
RT Low Level Output Voltage, VCC + RT @ IRT = 100 µA
@ IRT = 1 mA
V
RT–
V
RT–
– –
20
200
– –
RT Undervoltage Lockout, VCC – RT @ 2.5 V < VCC < V
CCUV+
V
RTUV
0
2/3 VCC Threshold V
CT+
8.0
V
DC
1/3 VCC Threshold V
CT–
4.0
Output Characteristics
High Level Output Voltage, V
BIAS–VO
@ IO = 0 A V
OH
100
mV
Low Level Output Voltage, VO @ IO = 0 A V
OL
100
Dynamic Electrical Characteristics
V
BIAS
(VCC, VBS) = 12 V and CL = 1000 pF unless otherwise specified. TA = 25°C.
Turn–On Rise Time t
r
120
ns
Turn–Off Fall Time t
f
60 – Deadtime, LS Turn–Off to HS Turn–On & HS Turn–Off to LS Turn–On DT 1.2 µA RT Duty Cycle, f
OSC
= 20 kHz DC 50 %
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MPIC2151
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Motorola Power Products Division Advanced Data
TYPICAL CONNECTION
TO
LOAD
10 TO 600 V
V
CC
RT
COM
V
B
CT
HO
V
S
LO
LEAD DEFINITIONS
Symbol Lead Description
RT Oscillator timing resistor input; a resistor is connected from RT to CT. RT is in phase with LO for normal IC operation. CT Oscillator timing capacitor input; a capacitor is connected from CT to COM in order to program the oscillator frequency
according to the following equation:
where 75 is the effective impedance of the RT output stage.
V
B
High Side Floating Supply HO High Side Gate Drive Output V
S
High Side Floating Supply Return
V
CC
Logic and Low Side Fixed Supply LO Low Side Gate Drive Output
COM Logic and Low Side Return
Figure 1. Input / Output Timing Diagram
Figure 2. Switching Time Waveform Definitions
Figure 3. Deadtime Waveform Definitions
LO
HO
V
CLAMP
V
CCUV+
V
CC
RT
CT
RT(HO)
RT(LO)
LO HO
50% 50%
10% 10%
90% 90%
t
r
t
f
50%50%
RT
HO
LO
90%
90%
10%
10%
DT
f
+
1
1.4 (RT)75W) CT
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MPIC2151
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Motorola Power Products Division Advanced Data
PACKAGE DIMENSIONS
CASE 626–05
ISSUE K
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
STYLE 1:
PIN 1. AC IN
2. DC + IN
3. DC – IN
4. AC IN
5. GROUND
6. OUTPUT
7. AUXILIARY
8. V
CC
1 4
58
F
NOTE 2
–A–
–B–
–T–
SEATING PLANE
H
J
G
D
K
N
C
L
M
M
A
M
0.13 (0.005) B
M
T
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 9.40 10.16 0.370 0.400 B 6.10 6.60 0.240 0.260 C 3.94 4.45 0.155 0.175 D 0.38 0.51 0.015 0.020 F 1.02 1.78 0.040 0.070
G 2.54 BSC 0.100 BSC
H 0.76 1.27 0.030 0.050 J 0.20 0.30 0.008 0.012 K 2.92 3.43 0.115 0.135 L 7.62 BSC 0.300 BSC
M ––– 10 ––– 10
N 0.76 1.01 0.030 0.040
_ _
CASE 751–05
ISSUE P
SEATING PLANE
1
4
58
C
K
4X P
A0.25 (0.010)MT B
S S
0.25 (0.010)
M
B
M
8X D
R
M
J
X 45
_
_
F
–A–
–B–
–T–
DIM MIN MAX
MILLIMETERS
A 4.80 5.00 B 3.80 4.00 C 1.35 1.75 D 0.35 0.49 F 0.40 1.25 G 1.27 BSC J 0.18 0.25 K 0.10 0.25 M 0 7 P 5.80 6.20 R 0.25 0.50
__
G
NOTES:
1. DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE.
2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
3. DIMENSIONS ARE IN MILLIMETER.
4. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.
5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
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MPIC2151
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Motorola Power Products Division Advanced Data
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MPIC2151/D
*MPIC2151/D*
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