Datasheet MP04TT600-16, MP04TT600-17, MP04TT600-18, MP04TT600-15 Datasheet (DYNEX)

MP04TT600

MP04TT600

Dual Thyristor Water Cooled Module

Preliminary Information

DS5466-1.1 June 2001

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (Non Toxic) Isolation Medium

■ Integral Water Cooled Heatsink

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

MP04TT600-18
MP04TT600-17
MP04TT600-16
MP04TT600-15

Lower voltage grades available

1800
1700
1600
1500

Conditions

T

= 0˚ to 125˚C,

vj

I

= I

= V
= V

= 50mA

RRM

RSM

RRM

V
V

DRM

DSM

DRM

respectively

=
+ 100V

KEY PARAMETERS
V

DRM

I

T(AV)

I

TSM(per arm)

I

T(RMS)

V

isol

5 (G1)

6 (G2)

Module outline type code:

MP04-W3

4 (K1)

3 (A)

7 (K2)

Fig. 1 TT Circuit diagram

1800V
580A
14000A
912A
3000V

1 (AK)

2 (A)

Module outline type code:

MP04-W3A

ORDERING INFORMATION

Order As:

MP04TT600-XX-W2 1/4 - 18 NPT connection
MP04TT600-XX-W3 1/4 - 18 NPT connection
MP04TT600-XX-W3A 1/4 - 18 NPT water connection

thread

XX shown in the part number about represents V
selection required, eg. MP04TT600-27-W2

Note: When ordering, please use the complete part number.

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DRM

/100

Module outline type code: MP04-W2

(See Package Details for further information)

Fig. 2 Module package variants - (not to scale)

1/8

MP04TT600

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Symbol

I

T(AV)

I

T(RMS

I

TSM

I2t

I

TSM

I2t

V

isol

Mean on-state current

RMS value

Surge (non-repetitive) on-current

2

t for fusing

I

Surge (non-repetitive) on-current

2

t for fusing

I

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Test Conditions

Half wave resistive load, T

4.5 Ltr/min T

= 25˚C @ 4.5 Ltr/min

T

water (in)

= 40˚C @ 4.5 Ltr/min

T

water (in)

R

= 0

= 125˚C

j

= 125˚C

j

DRM

10ms half sine, T

V

10ms half sine, T

= 50% V

V

R

Commoned terminals to base plate.
AC RMS, 1 min, 50Hz

water (in)

water (in)

= 25˚C

= 40˚C

Max.

650

580

1020

912

14

0.975x10

11.2

0.625x10

3000

6

6

Units

A

A

A

A

kA

2

s

A

kA

2

s

A

V

Symbol

R

th(j-w)

T

vj

T

stg

-

-

2/10

Parameter

Thermal resistance - junction to water

(per thyristor)

Virtual junction temperature

Storage temperature range

Screw torque

Weight (nominal)

Test Conditions

dc, 4.5 Ltr/min

Half wave, 4.5 Ltr/min

3 Phase, 4.5 Ltr/min

Reverse (blocking)

-

Mounting - M6

Electrical connections - M10

-

Min.

-

-

-

-

–40

6(53)

-

-

Max.

0.102

0.106

0.112

125

125

12(106)

Refer to

-

Units

˚C/kW

˚C/kW

˚C/kW

˚C

˚C

Nm (lb.ins)

Nm (lb.ins)

g

drawings

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DYNAMIC CHARACTERISTICS

MP04TT600

Symbol

I

RRM/IDRM

dV/dt

dI/dt

V

T(TO)

r

T

Parameter

Peak reverse and off-state current

Linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

Test Conditions

DRM

= 125˚C

= 125˚C

, Tj = 125˚C

, Tj = 125˚C

to 500A, gate source 10V, 5Ω

DRM

At V

RRM/VDRM

To 67% V

From 67% V

t

= 0.5µs, Tj = 125˚C

r

At T

vj

At T

vj

Min.

-

-

-

-

-

Max.

50

1000

500

0.85

0.38

Units

Note: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these

figures due to the impedance of the busbar from the terminal to the semiconductor.

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

V

GT

I

GT

Gate trigger voltage

Gate trigger current

Parameter

V

V

DRM

DRM

= 5V, T

= 5V, T

Test Conditions

= 25oC

case

= 25oC

case

Max.

200

Units

3.5

mA

V/µs

A/µs

V

mΩ

V

mA

P

V

V

V

I

P

V

FGM

GD

FGM

FGN

RGM

GM

G(AV)

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

At V

DRM Tcase

= 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 5

-

0.25

30

0.25

5

10

150

10

V

V

V

V

A

W

W

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3/8

MP04TT600

2500

Measured under pulse

- (A)

2000

T

conditions

12

1: Tj = 125˚C Min
2: Tj = 125˚C Max

1500

1000

Instantaneous on-state current I

500

0

0.5 1.0 1.5 2.0 2.5
Instantaneous on-state voltage V

- (V)

T

25

I2t = Î2 x t
2

20

15

10

I2t

5

Peak half sine wave on-state current - (kA)

0

11012345

10 20 30

ms Cycles at 50Hz

Duration

Fig. 3 Maximum (limit) on-state characteristics Fig. 4 Surge (non-repetitive) on-state current vs time

(with 50% V

RSM

at T

= 125˚C)

case

700

600

500

400

50

I

2t

value - (A

2

s x 10

3

)

100

- (V)

10

GT

Pulse width

µs
100
200
500
1ms

10ms

Frequency Hz

50

100

150

150

150

150

150

150

150

100

20

Upper limit 99%

1

Gate trigger voltage, V

V

GD

Lower limit 99%

0.1

Fig. 5 Gate characteristics

Table gives pulse power PGM in Watts

400
150
125
100

25

-

-

5W

10W

Region of certain

= -40˚C

= 25˚C

j

j

T

T

= 125˚C

j

T

Gate trigger current, I

GT

- (A)

50W

20W

triggering

100W

I

FGM

0.12

0.1

- (°C/W)

th(j-w)

0.08

0.06

0.04

0.02

Thermal resistance, Junction to water, R

0

1010.10.010.001

0.001 0.01 0.1 1 10 100 1000
Time (Seconds)

Fig. 6 Transient thermal impedance - dc

4/10

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MP04TT600

2200

Conduction Angle

2000
1800
1600
1400
1200
1000

800
600

Power dissipation - (Watts, per arm)

400
200

0

30°
60°
90°
120°
180°

0 200 400 600 800 1000 1200

Sine wave current (Average, per arm)

Fig. 7 On-state power loss per arm vs on-state current at

specified conduction angles, sine wave 50/60Hz

2200

Conduction Angle

2000
1800
1600
1400
1200
1000

800
600

Power dissipation - (Watts, per arm)

400
200

0

0 200 400 600 800 1000 1200 1400 1600

30°
60°
90°
120°
180°
DC

Square wave current - (Average, per arm)

Fig. 8 On-state power loss per arm vs on-state current at

specified conduction angles, square wave 50/60Hz

100

90

80

70

60

50

40

30

20

Conduction Angle

10

Maximum permissble inlet water temperature - (°C)

0

0 100 200 300 400 500 600 700

30°
60°
90°
120°
180°

Sine wave current (Average, per arm)

Fig. 9 Maximum permissible water inlet temperature vs

on-state current at specified conduction angles,

sine wave 50/60Hz

100

90

80

70

60

50

40

30

Conductin Angle

20

10

Maximum permissible water inlet temperature - (°C)

0

0 100 200 300 400 500 600 700 800 900

30°
60°
90°
120°
180°
DC

Square wave current (Average, per arm)

Fig. 10 Maximum permissible water inlet temperature vs

on-state current at specified conduction angles,

square wave 50/60Hz

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5/8

MP04TT600

4000

3500

3000

2500

2000

1500

Total device power loss - (W)

1000

Power resistive load

500

Power inductive load
Temp resistive load

Temp inductive load

0

500 600 700 800 900 1000 1100 1200 1300 1400 1500

DC bridge output current - (A dc)

90

80

70

60

50

40

30

20

Fig. 11 50/60Hz single phase bridge DC output current vs

power loss and maximum permissible water inlet

6000

5000

Max permissible case temp. - (˚C)

4000

3000

2000

Total device power loss - (W)

1000

Power resistive or inductive load

Temp resistive or inductive load

0

700 800 900 100011001200 13001400 15001600 17001800

DC bridge output current - (A dc)

Fig. 12 Fig. 11 50/60Hz Three phase bridge DC output current

vs power loss and maximum permissible water inlet

90

80

70

60

50

40

30

20

Max permissible case temp. - (˚C)

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MP04TT600

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

Auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately.

www.dynexsemi.com

Recommended fixings for mounting: M6 socket head cap screws

Nominal weight: 2060g

Module outline type code: MP04-W2

7/8

MP04TT600

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

8/10

Recommended fixings for mounting: M6 socket head cap screws

Nominal weight: 2060g

Auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately.

Module outline type code: MP04-W3

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MP04TT600

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

Auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately.

www.dynexsemi.com

Recommended fixings for mounting: M6 socket head cap screws

Nominal weight: 2530g

Module outline type code: MP04-W3A

9/8

MP04TT600

POWER ASSEMBLY CAPABILITY

The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD
design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of Dynex semiconductors.

An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.

HEATSINKS

The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

SALES OFFICES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5466-1 Issue No. 1.1 June 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

10/10

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