Datasheet MP04HBT590-14, MP04HBP590-14, MP04HBP590-16, MP04HBP590-18, MP04HBN590-16 Datasheet (DYNEX)

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FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (Non Toxic) Isolation Medium

■ Integral Water Cooled Heatsink

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

VOLTAGE RATINGS

ORDERING INFORMATION

Order As:

MP04HBT590-18 or MP04HBT-16 or MP04HBT14
MP04HBP590-18 or MP04HBP-16 or MP04HBP14
MP04HBN590-18 or MP04HBN-16 or MP04HBN14

Note: When ordering, please use the whole part number.

KEY PARAMETERS
V

DRM

1800V

I

T(AV)

595A

I

TSM(per arm)

16800A

V

isol

3000V

MP04---590

Dual Thyristor, Thyristor/Diode Module

Replaces April 2001 version, DS5371-2.2 DS5371-3.1 October 2001

1800
1600
1400

MP04---590-18
MP04---590-16
MP04---590-14

Conditions

T

vj

= 0˚ to 125˚C,

I

DRM

= I

RRM

= 50mA

V

DSM

= V

RSM

=

V

DRM

= V

RRM

+ 100V

respectively

Lower voltage grades available.

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

Code

Circuit

HBT

HBP

HBN

Fig. 2 Electrical connections - (not to scale)

Fig.1 Circuit diagrams

Module type code: MP04.

For further information see Package Details.

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Test Conditions

Half wave resistive load T

case

= 75˚C

T

case

= 85˚C

T

case

= 75˚C

8.3ms half sine, T

j

= 125˚C

V

R

= 0

8.3ms half sine, T

j

= 125˚C

V

R

= 50% V

DRM

10ms half sine, Tj = 125˚C

V

R

= 0

10ms half sine, T

j

= 125˚C

V

R

= 50% V

DRM

Commoned terminals to base plate.
AC RMS, 1 min, 50Hz

Symbol

I

T(AV)

I

T(RMS

I

TSM

I2t

I

TSM

I2t

I

TSM

I2t

I

TSM

I2t

V

isol

Units

A

A

A

kA

A

2

s

kA

A

2

s

kA

A

2

s

kA

A

2

s

V

Max.

595

505

935

16.8

1411 X 10

3

13.5

911 X 10

3

15.7

1232 X 10

3

12.6

794 X 10

3

3000

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Parameter

Mean on-state current

RMS value

Surge (non-repetitive) on-current

I

2

t for fusing

Surge (non-repetitive) on-current

I

2

t for fusing

Surge (non-repetitive) on-current

I

2

t for fusing

Surge (non-repetitive) on-current

I

2

t for fusing

Isolation voltage

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Test Conditions

dc

Half wave

3 Phase

Mounting torque = 5Nm

with mounting compound

Reverse (blocking)

-

Mounting - M6

Electrical connections - M10

-

Parameter

Thermal resistance - junction to case

(per thyristor or diode)

Thermal resistance - case to heatsink

(per thyristor or diode)

Virtual junction temperature

Storage temperature range

Screw torque

Weight (nominal)

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(c-hs)

T

vj

T

stg

-

-

Units

˚C/kW

˚C/kW

˚C/kW

˚C/kW

˚C

˚C

Nm (lb.ins)

Nm (lb.ins)

g

Max.

0.056

0.060

0.066

0.02

125

130

6 (35)

12 (106)

1580

Min.

-

-

-

-

-

–40

-

-

-

Units

mA

V/µs

A/µs

V

mΩ

Test Conditions

At V

RRM/VDRM

, Tj = 125˚C

To 67% V

DRM

, Tj = 125˚C

From 67% V

DRM

to 1500A, gate source 1.5A,

t

r

= 0.5µs, Tj = 125˚C

At T

vj

= 125˚C. See note 1

At T

vj

= 125˚C. See note 1

Parameter

Peak reverse and off-state current

Linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

DYNAMIC CHARACTERISTICS - THYRISTOR

Symbol

I

RRM/IDRM

dV/dt

dI/dt

V

T(TO)

r

T

Max.

50

1000

500

0.85

0.38

Min.

-

-

-

-

-

Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.

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Fig. 3 Maximum (limit) on-state characteristics Fig. 4 Sub-cycle surge curves

0.5 1.0 1.5 2.0 2.5
Instantaneous on-state voltage, V

T

- (V)

0

500

1000

1500

2000

2500

Measured under

pulse conditions

Instantaneous on-state current, I

T

- (A)

Tj = 125˚C Min
T

j

= 125˚C Max

0

5

10

15

20

25

30

35

40

14 810

Pulse length, half sine wave (ms)

Peak half sine on-state current - (kA)

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

I

2

t value - (A

2

s x 10

6

)

23 567 9

I

TSM

(VR = 0)

I

TSM

(VR = 50% V

RRM

)
I2t (VR = 0)
I2t (VR = 50% V

RRM

)

Parameter

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Test Conditions

V

DRM

= 5V, T

case

= 25oC

V

DRM

= 5V, T

case

= 25oC

At V

DRM

, T

case

= 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 5

-

Symbol

V

GT

I

GT

V

GD

V

FGM

V

FGN

V

RGM

I

FGM

P

GM

P

G(AV)

GATE TRIGGER CHARACTERISTICS AND RATINGS

Max.

3.5

200

0.25

30

0.25

5

10

150

10

Units

V

mA

V

V

V

V

A

W

W

CURVES

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Fig. 7 Transient thermal impedance - dc

Fig. 6 Gate characteristics

1010.10.010.001

Gate trigger current, I

GT

- (A)

100

10

1

0.1

Gate trigger voltage, V

GT

- (V)

Region of

certain triggering

T

j

= 125˚C

T

j

= 25˚C

T

j

= -40˚C

V

GD

I

FGM

Table gives pulse power PGM in Watts

Pulse width

µs
100
200
500
1ms

10ms

Frequency Hz

50
150
150
150
150

20

100
150
150
150
100

-

400
150
125
100

25

-

100W

50W

20W

10W

5W

Upper limit 99%

Lower limit 99%

0

0.01

0.02

0.03

0.04

0.05

0.06

0.001 0.01 0.1 1 10 100 1000
Time - (Seconds)

Thermal resistance junction to case - (°C/W)

Fig. 5 Sub-cycle surge curves

0

2

4

6

8

10

12

14

16

18

0 102030405060

Number of cycles @ 50Hz

Peak half sine wave on-state current - (kA)

Surge current (VR = 0)
Surge current (VR = 50% V

RRM

)

Fig. 8 On-state power loss per arm vs on-state current at

specified conduction angles, sine wave 50/60Hz

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

0 200 400 600 800 1000 1200

Sine wave current (Average, per arm)

Power dissipation (Watts, per arm)

30°
60°

90°
120°
180°

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Fig. 11 50/60Hz single phase bridge DC output current vs

power loss and maximum permissible case temperature

2500

3000

3500

4000

4500

5000

5500

6000

6500

7000

1000 1200 1400 1600 1800 2000 2200

dc output current - (A)

Total power loss - (W)

0

10

20

30

40

50

60

70

80

90

Max permissible case temp. - (˚C)

Power resistive load
Power inductive load
Temp resistive load

Temp inductive load

Fig. 8 On-state power loss per arm vs on-state current at

specified conduction angles, square wave 50/60Hz

Fig. 9 Maximum permissible casetemperature vs on-state

current at specified conduction angles, sine wave 50/60Hz

Fig. 10 Maximum permissible case temperature vs on-state

current at specified conduction angles, square wave 50/60Hz

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

0 200 400 600 800 1000 1200 1400 1600

Square wave current (Average, per arm)

Power dissipation (Watts, per arm)

30°
60°

90°
120°
180°

DC

0

10

20

30

40

50

60

70

80

90

100

100 200 300 400 500 600 700 800 900 1000

Sine wave current (Average, per arm)

Maximum permissble case temperature - (°C)

30°
60°

90°
120°
180°

0

10

20

30

40

50

60

70

80

90

100

100 200 300 400 500 600 700 800 1000 1200 1400

Square wave current (Average, per arm)

Maximum permissible case temperature - (°C)

30°
60°

90°
120°
180°

DC

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Fig. 12 50/60Hz Three phase bridge DC output current vs

power loss and maximum permissible case temperature

3500

4000

4500

5000

5500

6000

6500

7000

7500

9500

8000

8500

9000

1300 1500 1700 1900 2100 2300 2500

dc output current - (A)

Total power loss - (W)

0

10

20

30

40

50

60

70

80

90

Max permissible case temp. - (˚C)

Power resistive or inductive load
Temp resistive or inductive load

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Nominal weight: 1580g

Auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately.

Module outline type code: MP04

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

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POWER ASSEMBLY CAPABILITY

The Power Assembly group provides support for those
customers requiring more than the basic semiconductor switch.
Using CAD design tools the group has developed a flexible
range of heatsink / clamping systems in line with advances in
device types and the voltage and current capability of Dynex
semiconductors.

An extensive range of air and liquid cooled assemblies is
available covering the range of circuit designs in general use
today.

HEATSINKS

The Power Assembly group has a proprietary range of extruded
aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air
natural, forced air and liquid cooling (with flow rates) is available
on request.

For further information on device clamps, heatsinks and
assemblies, please contact your nearest sales representative or
customer service office.

MOUNTING RECOMMENDATIONS

Adequate heatsinking is required to maintain the base
temperature at 75˚C if full rated current is to be achieved. Power
dissipation may be calculated by use of V

T(TO)

and rT information
in accordance with standard formulae. We can provide
assistance with calculations or choice of heatsink if required.

The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.

Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build
up and foreign material. Care should be taken to ensure no
foreign particles remain.

An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces.
This should ideally be 0.05mm (0.002") per surface to ensure
optimum thermal performance.

After application of thermal compound, place the module
squarely over the mounting holes, (or ‘T’ slots) in the heatsink.
Fit and finger tighten the recommended fixing bolts at each end.
Using a torque wrench, continue to tighten the fixing bolts by
rotating each bolt in turn no more than 1/4 of a revolution at a
time, until the required torque of 6Nm (55lbs.ins) is reached on
all bolts at both ends.

It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.

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CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

SALES OFFICES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5371-3 Issue No. 3.1 October 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

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e-mail: [email protected]

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.