Datasheet MP04HB910-26, MP04HB910-28, MP04HB910-30, MP04HB910-24 Datasheet (DYNEX)

MP04HB910

MP04HB910

Dual Rectifier Diode Module

Preliminary Information

DS5425-1.2 February 2001

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (Non-toxic) Isolation Medium

APPLICATIONS

■ Power Supplies

■ Large IGBT Circuit 'Front Ends'

■ Rectifiers

■ Battery Chargers

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

MP04HB910-30
MP04HB910-28
MP04HB910-26
MP04HB910-24

3000
2800
2600
2400

T

vj

V

RSM

Conditions

= –40˚ to 150˚C,

= V

+ 100V

RRM

KEY PARAMETERS
V

RRM

I

F(AV)

I

FSM (per arm)

I

F(RMS)

V

isol

1

3000V

20000A

1440A
3000V

Fig.1 HB circuit configuration

915A

2

3

Lower voltage grades available

ORDERING INFORMATION

Order As:

MP04HB910-XX

XX shown in the part number about represents V
selection required.

Note: When ordering, please use the complete part number.
Please quote full part number in all correspondance.

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RRM

/100

Outline type code: MP04

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

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MP04HB910

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.

Symbol Parameter Conditions

I

F(AV)

I

F(RMS)

I

FSM

2

tI

I

I

FSM

2

t

I

V

isol

Surge (non-repetitive) forward current

Surge (non-repetitive) forward current

I
Isolation voltage

Mean forward current

RMS value

2

t for fusing

2

t for fusing 1.28 x 106A2s

Half wave resistive load

T

= 75oC 1440 A

case

T

= 85oC 1305 A

case

T

= 100oC 1090 A

case

10ms half sine; Tj = 150oC

VR = 0

10ms half sine; Tj = 150oC

VR = 50% V

Commoned terminals to base plate AC RMS, 1 min, 50Hz

RRM

T

= 75oC

case

= 85oC 830 A

T

case

T

= 100oC 695 A

case

915 A

20 kA

2.0 x 10

16 kA

3000 V

UnitsMax.

6

A2s

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

T

vj

T

stg

-

-

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Thermal resistance - junction to case
(per diode)

Virtual junction temperature

Storage temperature range

Screw torque

Weight (nominal)

Parameter

Conditions Min. Max. Units

dc

3 Phase

- 0.056

-

0.060Halfwave

- 0.066

Reverse (blocking) - 150

­Mounting
Electrical connections

–40 150

6 (53) -

- 12 (106)

- 1580 g-

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o

C/W

o

C/W

o

C/W

o

C

o

C

Nm (lb.ins)
Nm (lb.ins)

CHARACTERISTICS

MP04HB910

Symbol

I

RRM

Q

S

I

RR

V

TO

r

T

Parameter

Peak reverse current

Total stored charge

Peak recovery current

Threshold voltage. See Note 1.
Slope resistance. See Note 1. 0.29 mΩ

At V

, T

RRM

I

= 1000A, dIRR/dt = 3A/µs

F

= 150˚C, VR = 100V

T

case

= 150˚C - 0.7 V

At T

vj

At Tvj = 150˚C -

Conditions Min. Max. Units

= 150oC-50mA

case

-

µC1600

-85A

Note 1: The data given in this datasheet with regard to forward voltage drop is the for the calculation of the power dissipation in

the semiconductor elements only. Forward voltage drops measured at the power terminals will be in excess of these figures due to
the impedance of the busbars from the terminals to the semiconductor.

CURVES

2500

Measured under pulse
conditions

- (A)

2000

F

2200
2000
1800
1600

1500

Tj = 150˚C

1000

Instantaneous forward current I

500

0

0.5 0.75 1.0 1.51.25
Instantaneous forward voltage V

Fig.3 Maximum (limit) forward characteristics

Tj = 25˚C

- (V)

F

1400
1200
1000

800
600

Power dissipation (Watts, per arm)

400
200

0

0 200 400 600 800 1000 1200 1400 1600 1800

Forward current, (Average, per arm) I

F(AV)

- (A)

Fig.4 Power dissipation curves

30°
60°
90°
120°
180°
DC

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MP04HB910

10000

Conditions:
Tj = 150˚C
VR = 100V
IF = 1000A

- (µC)

S

1000

Stored charge Q

I

F

dIF/dt

100

0.1 1.0 10 100
Rate of decay of on-state current dIF/dt - (A/µs)

Fig.5 Maximum stored charge

1000

Conditions:
Tj = 175˚C
VR = 100V
IF = 1000A

- (A)

RR

100

Reverse current I

Q

S

I

RR

10

1.0 10 100
Rate of decay of forward current dIF/dt - (A/µs)

Fig.6 Maximum reverse recovery current

35

1.4

I2t = Î2 x t

2

30

25

20

15

I2t

10

1.3

1.2

I

2

t value - (A

1.1

2

s x 10

1.0

6

)

0.9

Peak half sine forward current - (kA)

5

0

1101235102050

0.8

0.7

ms Cycles at 50Hz

Duration

Fig.7 Surge (non-repetitive) forward current vs time

(with 50% V

@ Tc - 150˚C)

RRM

0.06

0.05

- (°C/W)

0.04

th(j-c)

0.03

0.02

Thermal resistance, R

0.01

0

0.001 0.01 0.1 1 10 100 1000
Time - (Seconds)

Fig.8 Transient thermal impedance - dc

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MP04HB910

90

80

70

60

50

40

30

20

Maximum permissble case temperature - (°C)

10

0

200 400 600 800 1000 1200 1400 1600

Forward current (Average, per arm), I

F(AV)

- (A)

30°
60°
90°
120°
180°
DC

Fig.9 Maximum permissible case temperature vs forward

current per arm at various conduction angles, 50/60Hz

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MP04HB910

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

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Recommended fixings for mounting: M6 socket head cap screws.

Nominal weight: 1580g

Module outline type code: MP04

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MP04HB910

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Central Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

SALES OFFICES

Central Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5425-1 Issue No. 1.2 February 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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