Datasheet MP03HBP360-16, MP03HBP360-18, MP03HBT360-08, MP03HBP360-12, MP03HBN360-14 Datasheet (DYNEX)

MP03XXX360

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FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (Non Toxic) Isolation Medium

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

VOLTAGE RATINGS

ORDERING INFORMATION

Order As:

MP03HBT360-XX
MP03HBN360-XX
MP03HBP360-XX

XX shown in the part number above represents the V

RRM

/100

slection required, e.g. MP03HBT360-17
Note: When ordering, please use the complete part number.

KEY PARAMETERS
V

DRM

1800V

I

T(AV)

355A

I

TSM(per arm)

8100A

V

isol

3000V

MP03XXX360

Dual Thyristor, Thyristor/Diode Module

Replaces January 2000 version, DS4484-5.0 DS4484-6.1 June 2001

Fig. 1 Circuit diagrams

Fig. 2 Electrical connections - (not to scale)

Outline type code: MP03

1800
1600
1400
1200
1000

800

MP03XXX360-18
MP03XXX360-16
MP03XXX360-14
MP03XXX360-12
MP03XXX360-10
MP03XXX360-08

Conditions

T

vj

= 0˚ to 125˚C,

I

DRM

= I

RRM

= 30mA

V

DSM

= V

RSM

=

V

DRM

= V

RRM

+ 100V

respectively

Lower voltage grades available.
XXX shown in the part number above represents the circuit
configuration required.

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

123

K

2

G

2

G

1

K

1

G1 K

1

12

3

K

2 G2

Circuit type code: HBT

Circuit type code: HBP

Circuit type code: HBN

G1 K

1

12

3

12

3

K

2 G2

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Test Conditions

Half wave resistive load T

case

= 75˚C

T

case

= 85˚C

T

heatsink

= 75˚C

T

heatsink

= 85˚C

T

case

= 75˚C

10ms half sine, T

j

= 130˚C

V

R

= 0

10ms half sine, T

j

= 130˚C

V

R

= 50% V

DRM

Commoned terminals to base plate.
AC RMS, 1 min, 50Hz

Symbol

I

T(AV)

I

T(RMS

I

TSM

I2t

I

TSM

I2t

V

isol

Units

A

A

A

A

A

kA

A

2

s

kA

A

2

s

V

Max.

355

312

276

242

560

8.1

0.33x10

6

6.5

0.21x10

6

3000

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Parameter

Mean on-state current

RMS value

Surge (non-repetitive) on-current

I

2

t for fusing

Surge (non-repetitive) on-current

I

2

t for fusing

Isolation voltage

Test Conditions

dc

Half wave

3 Phase

Mounting torque = 5Nm

with mounting compound

Reverse (blocking)

-

Mounting - M5

Electrical connections - M8

-

Parameter

Thermal resistance - junction to case

(per thyristor or diode)

Thermal resistance - case to heatsink

(per thyristor or diode)

Virtual junction temperature

Storage temperature range

Screw torque

Weight (nominal)

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(c-hs)

T

vj

T

stg

-

-

Units

˚C/kW

˚C/kW

˚C/kW

˚C/kW

˚C

˚C

Nm (lb.ins)

Nm (lb.ins)

g

Max.

0.105

0.115

0.12

0.05

135

135

5(44)

9(80)

950

Min.

-

-

-

-

-

–40

-

-

-

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Units

mA

V/µs

A/µs

V

mΩ

Test Conditions

At V

RRM/VDRM

, Tj = 130˚C

To 67% V

DRM

, Tj = 130˚C

From 67% V

DRM

to 600A, gate source 10V, 5Ω

t

r

= 0.5µs, Tj = 130˚C

At T

vj

= 135˚C. See note 1

At T

vj

= 135˚C. See note 1

Parameter

Peak reverse and off-state current

Linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

DYNAMIC CHARACTERISTICS - THYRISTOR

Symbol

I

RRM/IDRM

dV/dt

dI/dt

V

T(TO)

r

T

Max.

50

1000

500

0.78

0.79

Min.

-

-

-

-

-

Parameter

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Test Conditions

V

DRM

= 5V, T

case

= 25oC

V

DRM

= 5V, T

case

= 25oC

At V

DRM Tcase

= 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 5

-

Symbol

V

GT

I

GT

V

GD

V

FGM

V

FGN

V

RGM

I

FGM

P

GM

P

G(AV)

GATE TRIGGER CHARACTERISTICS AND RATINGS

Max.

3

150

0.25

30

0.25

5

10

100

5

Units

V

mA

V

V

V

V

A

W

W

Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these

figures due to the impedance of the busbar from the terminal to the semiconductor.

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Fig. 6 Transient thermal impedance - dc

Fig. 3 Maximum (limit) on-state characteristics Fig. 4 Surge (non-repetitive) on-state current vs time

(with 50% V

RSM

at T

case

= 130˚C)

Fig. 5 Gate characteristics

1600

1200

800

400

1400

1000

600

200

0

Instantaneous on-state current, I

T

- (A)

0.6 1.0 1.4 1.8
Instantaneous on-state voltage, V

T

- (V)

Measured under pulse conditions

Tj = 135˚C

0.8 1.2

1.6

20

15

10

5

0

Peak half sine wave on-state current - (kA)

11012345

50

ms Cycles at 50Hz

Duration

150

175

200

I

2

t value - (A

2

s x 10

3

)

I2t

I2t = Î2 x t
2

10 20 30

100

10

1

0.1

0.001 0.10.01
I

GD

0.1 10
I

FGM

V

FGM

Lower Limit 1%

Upper Limit 99%

T

j

= –40˚C

Tj = 25˚C

T

j

= 125˚C

Gate trigger voltage, V

GT

- (V)

Gate trigger current, IGT - (A)

100W

75

W

50W

10W

5W

Table gives pulse power PGM in Watts

Pulse width

µs
20

25
100
500

1ms

10ms

Frequency Hz

50
100
100
100
100
100

10

100
100
100
100
100

50

-

400
100
100
100

25

-

-

Region of

certain

triggering

100101.00.10.010.001

Time - (s)

0.15

0

0.10

0.05

Thermal impedance, R

th(j-c)

- (˚C/W)

d.c.

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Fig. 7 On-state power loss per arm vs on-state current at

specified conduction angles, sine wave 50/60Hz

Fig. 8 On-state power loss per arm vs on-state current at

specified conduction angles, square wave 50/60Hz

Fig. 9 Maximum permissible case temperature vs

on-state current at specified conduction angles,

sine wave 50/60Hz

Fig. 10 Maximum permissible case temperature vs

on-state current at specified conduction angles,

square wave 50/60Hz

0

100

200

300

400

500

600

700

800

900

1000

1100

0 50 100 150 200 250 300 350 400 450 500 550

Sine wave current (Average, per arm)

Power dissipation (Watts, per arm)

30°
60°
90°
120°
180°

Conduction angle

0

100

200

300

400

500

600

700

800

900

1000

1100

0 50 150 250 350 450 550 650 750

Square wave current (Average, per arm)

Power dissipation (Watts, per arm)

30°
60°
90°
120°
180°
DC

Conduction angle

0

10

20

30

40

50

60

70

80

90

100

100 150 200 250 300 350 400 450 500 550

Sine wave current (Average, per arm) - (A)

Maximum permissble case temperature - (˚C)

30°
60°
90°
120°
180°

Conduction angle

0

10

20

30

40

50

60

70

80

90

100

100 200 300 400 500 600 700 800

Square wave current (Average, per arm) - (A)

Maximum permissible case temperature - (˚C)

30°
60°
90°
120°
180°
DC

Conduction angle

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Fig. 11 50/60Hz single phase bridge DC output current vs power loss and maximum permissible case temperature for

specified values of heatsink thermal resistance

Fig. 12 Fig. 11 50/60Hz Three phase bridge DC output current vs power loss and maximum permissible case temperature

for specified values of heatsink thermal resistance

0

200

400

600

800

1000

1200

1400

1600

20 30 40 50 60 70 80 90 100 110 120

Maximum ambient temperature - (˚C)

Single phase bridge total device losses - (W)

0

200

400

600

800

1000

1200

1400

1600

0 100 200 300 400 500 600

Single phase bridge DC output current (A)

Single phase bridge total device losses - (W)

0.02

0.04

0.08

0.1

0.12

0.15

0.2

0.3

0.4

R

th(hs-a)

R - Load
L - Load

0

200

400

600

800

1000

1200

1400

1600

20 30 40 50 60 70 80 90 100 110 120

Maximum ambient temperature - (˚C)

3 Phase bridge total device losses - (W)

R

th(hs-a)

0.02

0.04

0.08

0.1

0.12

0.15

0.2

0.3

0.4

R & L Load

0

200

400

600

800

1000

1200

1400

1600

0 100 200 300 400 500 600

3 Phase bridge output DC current - (A)

Total device loss - (Watts)

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PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

35

5

28.5

80

115

50

52

92

3x M8

18

Ø5.5

38

6.5

2.8x0.8

32

42.5

5

5

1

2

3

K

2

G

2

G

1

K

1

Recommended fixings for mounting: M5 socket head cap screws.

Nominal weight: 950g

Auxiliary gate/cathode leads are not supplied but may be purchsed separately.

Module outline type code: MP03

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POWER ASSEMBLY CAPABILITY

The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD
design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of Dynex semiconductors.

An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.

HEATSINKS

The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

MOUNTING RECOMMENDATIONS

Adequate heatsinking is required to maintain the base
temperature at 75˚C if full rated current is to be achieved. Power
dissipation may be calculated by use of V

T(TO)

and rT information
in accordance with standard formulae. We can provide
assistance with calculations or choice of heatsink if required.

The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.

Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build
up and foreign material. Care should be taken to ensure no
foreign particles remain.

An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces.
This should ideally be 0.05mm (0.002") per surface to ensure
optimum thermal performance.

After application of thermal compound, place the module
squarely over the mounting holes, (or ‘T’ slots) in the heatsink.
Using a torque wrench, slowly a torque wrench, slowly tighten
the recommended fixing bolts at each end, rotating each in turn
no more than 1/4 of a revolution at a time. Continue until the
required torque of 6Nm (55lb.ins) is reached at both ends.

It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.

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CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

SALES OFFICES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4484-6 Issue No. 6.1 June 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

http://www.dynexsemi.com

e-mail: [email protected]

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.